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    SI2308DS SPICE DEVICE MODEL Search Results

    SI2308DS SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SI2308DS SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2308DS SPICE Device Model Vishay N-Channel 60-V (D-S) MOSFET Original PDF

    SI2308DS SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI2308DS

    Abstract: Si2308DS SPICE Device Model 70902
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2308DS S-50383Rev. 21-Mar-05 Si2308DS SPICE Device Model 70902

    Si2308DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2308DS 17-Apr-01

    Si2308DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2308DS 18-Jul-08

    Si2308DS

    Abstract: Siliconix
    Text: SPICE Device Model Si2308DS N-Channel 60-V D-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original
    PDF Si2308DS Siliconix

    SI2308DS-T1-E3

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 S-50574--Rev. 04-Apr-05 SI2308DS-T1-E3

    SI2308DS-T1-E3

    Abstract: Si2308DS Si2308DS-T1
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 08-Apr-05 SI2308DS-T1-E3

    Si2308DS

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 18-Jul-08

    Si2308DS-T1-GE3

    Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11

    SI2308DS-T1-GE3

    Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 18-Jul-08

    SOT-23 marking a8

    Abstract: Si2308DS
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11 SOT-23 marking a8

    marking code vishay SILICONIX sot-23

    Abstract: Siliconix Cross Reference SI2308DS-T1-E3 Si2308DS
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking code vishay SILICONIX sot-23 Siliconix Cross Reference

    Si2308DS

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original
    PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


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    PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04

    16-channel darlington array

    Abstract: example code LTC2448 LTC3544B 7805 12v to 5v 2a flyback converter 30kv dc output mark 68m 2108 npn transistor LTC2499 48v battery charger schematic diagram VISHAY VDR
    Text: LINEAR TECHNOLOGY MArch 2007 IN THIS ISSUE… Cover Article Easy Drive Delta-Sigma ADCs Deliver Powerful Features and Reduce Design Mark Thoren Linear Technology in the News….2 Design Features


    Original
    PDF RS485/RS422 SE-164 16-channel darlington array example code LTC2448 LTC3544B 7805 12v to 5v 2a flyback converter 30kv dc output mark 68m 2108 npn transistor LTC2499 48v battery charger schematic diagram VISHAY VDR