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    SI2308DS SPICE DEVICE MODEL Search Results

    SI2308DS SPICE DEVICE MODEL Result Highlights (5)

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    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
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    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SI2308DS SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2308DS SPICE Device Model Vishay N-Channel 60-V (D-S) MOSFET Original PDF

    SI2308DS SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI2308DS

    Abstract: Si2308DS SPICE Device Model 70902
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2308DS S-50383Rev. 21-Mar-05 Si2308DS SPICE Device Model 70902 PDF

    Si2308DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2308DS 17-Apr-01 PDF

    Si2308DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2308DS 18-Jul-08 PDF

    Si2308DS

    Abstract: Siliconix
    Text: SPICE Device Model Si2308DS N-Channel 60-V D-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		Si2308DS Siliconix PDF

    SI2308DS-T1-E3

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 S-50574--Rev. 04-Apr-05 SI2308DS-T1-E3 PDF

    SI2308DS-T1-E3

    Abstract: Si2308DS Si2308DS-T1
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 08-Apr-05 SI2308DS-T1-E3 PDF

    Si2308DS

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 18-Jul-08 PDF

    Si2308DS-T1-GE3

    Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11 PDF

    SI2308DS-T1-GE3

    Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 18-Jul-08 PDF

    SOT-23 marking a8

    Abstract: Si2308DS
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11 SOT-23 marking a8 PDF

    marking code vishay SILICONIX sot-23

    Abstract: Siliconix Cross Reference SI2308DS-T1-E3 Si2308DS
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking code vishay SILICONIX sot-23 Siliconix Cross Reference PDF

    Si2308DS

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110 PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 PDF

    16-channel darlington array

    Abstract: example code LTC2448 LTC3544B 7805 12v to 5v 2a flyback converter 30kv dc output mark 68m 2108 npn transistor LTC2499 48v battery charger schematic diagram VISHAY VDR
    Text: LINEAR TECHNOLOGY MArch 2007 IN THIS ISSUE… Cover Article Easy Drive Delta-Sigma ADCs Deliver Powerful Features and Reduce Design Mark Thoren Linear Technology in the News….2 Design Features


    Original     		RS485/RS422 SE-164 16-channel darlington array example code LTC2448 LTC3544B 7805 12v to 5v 2a flyback converter 30kv dc output mark 68m 2108 npn transistor LTC2499 48v battery charger schematic diagram VISHAY VDR PDF