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    SI109 Search Results

    SI109 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TSI109-200IL Renesas Electronics Corporation Host Bridge Visit Renesas Electronics Corporation
    TSI109-200ILY Renesas Electronics Corporation Host Bridge Visit Renesas Electronics Corporation
    TSI109-200CL Renesas Electronics Corporation Host Bridge Visit Renesas Electronics Corporation
    TSI109-200CLY Renesas Electronics Corporation Host Bridge Visit Renesas Electronics Corporation
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    SI109 Price and Stock

    Renesas Electronics Corporation TSI109-200CL

    IC INTFACE SPECIALIZED 1023FCBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSI109-200CL Tray
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    Renesas Electronics Corporation TSI109-200IL

    IC INTFACE SPECIALIZED 1023FCBGA
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    DigiKey TSI109-200IL Tray 48
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    • 100 $378.71292
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    Avnet Silica TSI109-200IL 19 Weeks 24
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    Renesas Electronics Corporation TSI109-200ILY

    IC INTFACE SPECIALIZED 1023FCBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSI109-200ILY Tray 48
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    • 100 $378.71292
    • 1000 $378.71292
    • 10000 $378.71292
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    Avnet Silica TSI109-200ILY 19 Weeks 24
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    Renesas Electronics Corporation TSI109-200CLY

    IC INTFACE SPECIALIZED 1023FCBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSI109-200CLY Tray 48
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    • 100 $254.6225
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    ISI ISI-1093

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    Bristol Electronics ISI-1093 300
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    Find more SI109 price and stock on Findchips.com

    SI109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1905DL

    Abstract: si1095
    Text: SPICE Device Model Si1095DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1095DL S-50232Rev. 28-Feb-05 Si1905DL si1095

    Si1905DL

    Abstract: si1095dl
    Text: SPICE Device Model Si1095DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1095DL 18-Jul-08 Si1905DL

    S1104SFU25

    Abstract: 104S S954 s95A S962SJU25 S962SJU26 S962SJU27 S962SJU28 S962SJU29 S962SJU30
    Text: HIGH POWER FLAT BASE' DIODES — 3 3 5 to 1010A available m atched fo r parallel o p eration , replace S in cen tre o f ty p e No. by P I f A V 1 0 0 'C If s m 335 A 5600 A |2t 157 kA;!sec Type No. V rsm S962SJU25 S962SJU26 S962SJU27 S962SJU28 S962SJU29


    OCR Scan     		PDF 335to S962SJU25 S962SJU26 S962SJU27 S962SJU28 S962SJU29 S962SJU30 S962SJU31 S962SJU32 S962SJU33 S1104SFU25 104S S954 s95A

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541