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    Mean Well SI06W8-09

    6W; 9-75VIN; 9VOUT @667MA,1"*1"
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    6W; 9-75VIN; 3.3VOUT @1500MA,1"
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    Mean Well SI06W8-12

    6W; 9-75VIN; 12VOUT @500MA,1"*1
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    Vishay Sfernice BSI063470R0JA22

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    SI06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD 352a

    Abstract: smd transistor 351A smd transistor A18e smd 352A transistor SMD w04 57 smd transistor w07 transistor SMD W06 78 A18E smd 351A smd transistor smd transistor w04
    Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM71-10121-3E FR60 32-BIT MICROCONTROLLER MB91350A Series HARDWARE MANUAL FR60 32-BIT MICROCONTROLLER MB91350A Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.


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    PDF CM71-10121-3E 32-BIT MB91350A FR30/40 0000B 0018H) transistor SMD 352a smd transistor 351A smd transistor A18e smd 352A transistor SMD w04 57 smd transistor w07 transistor SMD W06 78 A18E smd 351A smd transistor smd transistor w04

    transistor SMD W06 78

    Abstract: smd transistor A18e SMD Transistor W04 W04 82 352a smd transistor transistor SMD p41 smd w04
    Text: FUJITSU SEMICONDUCTOR CM71-10121-1E CONTROLLER MANUAL FR60 32-BIT MICROCONTROLLER MB91350A Series HARDWARE MANUAL FR60 32-BIT MICROCONTROLLER MB91350A Series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and Intended Reader The MB91350A series is one of the FR60 series of microcontrollers. The FR60 series of


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    PDF CM71-10121-1E 32-BIT MB91350A FR30/40 transistor SMD W06 78 smd transistor A18e SMD Transistor W04 W04 82 352a smd transistor transistor SMD p41 smd w04

    Triac bt 808 600C

    Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
    Text: 2361 Technical portal and online community for Design Engineers - www.element-14.com Sensors & Transducers Accelerometers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contrast Scanners . . . . . . . . . . . . . . . . . . . . . . . . . Current Transducers . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 Triac bt 808 600C w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a

    smd code marking NEC

    Abstract: smd tantalum code marking NEC NL1100 NL1100L PC87338 NL1100-1 label LOT CODE NEC
    Text: Application Note NL1100, NL1100L IrDA Ver. 1.1 COMPLIANT TANSCEIVER MODULE Document No. P12343EJ3V0AN00 3rd edition Date Published May 1999 N CP(K) Printed in Japan 1997, 1999 [MEMO] 2 Application Note P12343EJ3V0AN00 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a


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    PDF NL1100, NL1100L P12343EJ3V0AN00 NL1100-1, NL1100L) NL1100 smd code marking NEC smd tantalum code marking NEC NL1100 NL1100L PC87338 NL1100-1 label LOT CODE NEC

    C9750

    Abstract: C10990 S11059-78HT S11154-01CT S10604
    Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS


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    PDF C10988MA C10627 D-82211 DE128228814 C9750 C10990 S11059-78HT S11154-01CT S10604

    EW457P5000

    Abstract: EW1700BM6500 M38T-A10 HC60N HONEYWELL MODULATing valve EW9106AFZ001 ML7420A6009 ML7420A6025 M6061A VSMF-420-2
    Text: Product catalog ACS Environmental Controls Honeywell Srl ACS Environmental Controls Via Philips, 12 20052 Monza Telefono: +39 039 2165.1 Email: info@honeywell.it Honeywell ΕΠΕ ACS Environmental Controls Πολυτεχενείου, 25 14122, Νέο Ηράκλειο


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    PDF KSW24 KSW230 UK3B-0007IT0H-R0713 EW457P5000 EW1700BM6500 M38T-A10 HC60N HONEYWELL MODULATing valve EW9106AFZ001 ML7420A6009 ML7420A6025 M6061A VSMF-420-2

    SF229

    Abstract: toshiba s105
    Text: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2M b it C M O S m u ltip o rt m e m o ry eq u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m a ccess m e m o ry R A M p o rt a n d a 5 1 2 -w o rd s by


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    PDF TC528257 144WORDS SF229 toshiba s105

    tc528126

    Abstract: TC528126B
    Text: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The


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    PDF TC52812GBJ/BZ 072-words 256-words TC528126BJ/BZ TC52812GB tc528126 TC528126B

    6 pin sim

    Abstract: KSI-06B1D-AP t177 sh 94v-0 FT40 06b1d Kingstate 106l YK4-1177
    Text: K S - E - R - 0 2 7 - 1 .2 | 0.a0 TYP.6 REV 2.54 TYP. REV SH DESCRIPTION DATE ORDER INFORMATION: KSI-06B1D-AP □VER B: Plating 1 Gold flash (2)15u" Gold (4) 30u" Gold D: Packaging: (l)Tube (2) Tape & Reel in B BODY ö - V -H CXJ , C-'—


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    PDF KSI-06B1D-AP 1-06-L 6 pin sim KSI-06B1D-AP t177 sh 94v-0 FT40 06b1d Kingstate 106l YK4-1177

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2 M b it C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m access m e m o ry R A M p o rt an d a 5 1 2 -w o rd s b y


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    PDF TC528257 144WORDS C-231

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits


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    PDF TC528128AP ORDSx88ITS TC528128AP/ 072-words 256-words TC528128AP/AJ TC528128AP DIP40 TC523123A?

    GG41

    Abstract: No abstract text available
    Text: April 1993 Edition 2.1 FUJITSU DATA S H E E T M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial


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    PDF MB818251 400mil 40-pin 475mil 44-pin MB818251 GG41

    2901c

    Abstract: amd 2901 alu D-40 i5 instruction CD004110 am2902
    Text: 3L06ZUJV/aL06ZUJV A m 2 9 0 1 B /A m 2 9 0 lC Four-Bit Bipolar Microprocessor Slice DISTINCTIVE CHARACTERISTICS L e ft/rig h t shift independent of ALU Add and shift operations take only one cycle. Four status flags Carry, overflow, zero, and negative. Flexible data source selection ALU data is selected from five source ports fo r a total of


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    PDF Am2901B/Am290 Am2901s Am2901 Am2900 01G56B 2901c amd 2901 alu D-40 i5 instruction CD004110 am2902

    tc528257

    Abstract: W640 SFC39 DIN 41162
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS m ultiport m em ory equipped with a 262,144-words by 8 -bits dynam ic random access mem ory RAM port and a 512-words by 8 -bits static serial access memory (SA M ) port. The


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    PDF TC528257 144WORDS TC528257 144-words 512-words -84UUHEB-fl-B TC528257J/SZ/FT/TRâ TC528257J/SZ/FT/TR-70 W640 SFC39 DIN 41162

    msm518121

    Abstract: si08
    Text: O K I Semiconductor MSM518121A 131,072-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamicrandom access memory, RAM port, and a 256-word by 8-bitstatic serial access memory,


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    PDF MSM518121A 072-Word MSM518121A 072-words 256-word TheMSM518121 msm518121 si08

    UPD482445

    Abstract: PD482444
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /;PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D e s c rip tio n The ¿¿PD482444 and //PD482445 have a random access port and a serial access port. The random access port has a 4M -bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock


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    PDF uPD482444 uPD482445 256K-WORD 16-BIT PD482444 //PD482445 /xPD482445 03it8 /PD482444, jiPD482444,

    MSM518122

    Abstract: SI05 ZIP40-P-475-1 si08
    Text: O K I Semiconductor M SM 518122 131,072-W ord x 8 -B it M ultiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.


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    PDF MSM518122 072-Word MSM518122 256-word S0J40-P-400-1 SOJ42-P-400-1 SI05 ZIP40-P-475-1 si08

    Untitled

    Abstract: No abstract text available
    Text: N E C 6427525 N E C NEC ELECTRONICS INC OSE D | bME752S GOElMbb t ELECTRONICS INC NEC Electronics Inc. 05E 21466 D T-5Z-33 -09 //P D 42232 TRIPLE-PORT GRAPHICS BUFFER PRELIMINARY INFORMATION Description Pin Configurations The /^PD42232 is a highly integrated triple-port


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    PDF bME752S T-5Z-33 40-Pln uPD42232

    MB818251

    Abstract: MB818251-70 UA729
    Text: April 1993 Edition 2.1 FUJITSU DATA SH EET M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144x8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial


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    PDF 144x8 MB818251 400mil 40-pin 475mil 44-pin MB818251-70 UA729

    Untitled

    Abstract: No abstract text available
    Text: M O SEL V IT E L IC V52C8256 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 512 X 8 SAM HIGH PERFORMANCE V52C8256 PRELIMINARY 60 70 80 Max. RAS Access Time, I raq 60 ns 70 ns 80 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns Max. Column Address Access Time, (lM )


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    PDF V52C8256 V52C8256

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC528267 s i l i c o n g a t e CMOS 262,144WORDS x 8BITS MULTIPORT DRAM target DESCRIPTION T h e T C 5 2 8 2 6 7 is a 2 M b it C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s by ra n d o m acc e ss m e m o ry R A M p o rt an d a 5 1 2 -w o rd s b y


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    PDF 144WORDS TC528267 H-123

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 13 1, 0 7 2 W O R D S x S B I T S M U L T I P O R T D R A M DE S C R IP TIO N The TC528128BJ/RZ Is a CMOS m uliipori m em ory equipped with a 131,072-words by 8 -bits dynam ic random act ess m em ory RAM p o rt and a 250-words by 8 -bits static serial access m em ory (SAM) port. The


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    PDF TC528128BJ/RZ 072-words 250-words TC528128BJ/BZ TC52812SBJ/BZ

    528128

    Abstract: C144 W.S C c159 age C143 equivalent TC524258 KSD 166 TC524258B
    Text: TOSHIBA TC528128B t a r g e t s il ic o n g a t e c m o s 13I,072WORDSx8BITS MULTIPORT DRAM DESCRIPTION The T C 5 2 8 128B is a CM OS m ultiport m em ory equipped with a 131,072-words by 8-bits dynam ic random access m em ory RAM port and a 256-words by 8-bits static serial access m em ory (SAM ) port. The T C 528128B


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    PDF TC528128B 072WORDSx8BITS 072-words 256-words 528128B TC528128B C-170 528128 C144 W.S C c159 age C143 equivalent TC524258 KSD 166 TC524258B

    UPD482445G5-70-7JG

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿ PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT Description The ¿¡PD482444 and ¿¡PD482445 have a random access port and a serial access port. The random access port has a 4M -bit (262, 144 w ords x 16 bits mem ory cell array structure.


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    PDF PD482444, 256K-WORD 16-BIT PD482444 PD482445 482445L. PD482444GW UPD482445G5-70-7JG