Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI-RECTIFIER 10A Search Results

    SI-RECTIFIER 10A Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc

    SI-RECTIFIER 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cm 324

    Abstract: No abstract text available
    Text: PD-97804 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67434 550V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67434 IRHNJ63434 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω ID 3.4A 300K Rads (Si) 3.4A 2.9Ω International Rectifier’s R6TM technology provides


    Original
    PDF PD-97804 IRHNJ67434 IRHNJ63434 90MeV/ MIL-STD-750, MlL-STD-750, cm 324

    IRHNJ597230

    Abstract: IRHNJ593230
    Text: PD - 94046D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides


    Original
    PDF 94046D IRHNJ597230 IRHNJ597230 IRHNJ593230 -200V, MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-97805 IRHY67434CM 550V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number IRHY67434CM IRHY63434CM Radiation Level RDS(on) 100K Rads (Si) 3.0Ω 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


    Original
    PDF PD-97805 O-257AA) IRHY67434CM IRHY63434CM 90MeV/ O-257AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD - 94046D IRHNJ597230 200V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides


    Original
    PDF 94046D IRHNJ597230 IRHNJ597230 IRHNJ593230 suc200V, MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides


    Original
    PDF PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750,

    95837

    Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
    Text: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


    Original
    PDF PD-95837 O-257AA) IRHY67C30CM IRHY67C30CM IRHY63C30CM 90MeV/ 5M-1994. O-257AA. 95837 PD-95837 RG 2006 10A 600V

    2n7598

    Abstract: 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A
    Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides


    Original
    PDF PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750, 2n7598 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A

    mosfet motor dc 48v

    Abstract: IRHY593034CM IRHY597034CM T0-257AA G 331
    Text: PD - 94663A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095Ω -18A* IRHY593034CM 300K Rads (Si) 0.095Ω -18A* International Rectifier’s R5TM technology provides


    Original
    PDF 4663A O-257AA) IRHY597034CM IRHY597034CM IRHY593034CM 5M-1994. O-257AA. mosfet motor dc 48v T0-257AA G 331

    IRHNJ63234

    Abstract: IRHNJ67234 PD-97197
    Text: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides


    Original
    PDF PD-97197 IRHNJ67234 IRHNJ63234 90MeV/ MIL-STD-750, MlL-STD-750, IRHNJ63234 IRHNJ67234 PD-97197

    PD-94667C

    Abstract: IRHMS67260 IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A
    Text: PD-94667C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original
    PDF PD-94667C O-254AA) IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ O-254AA. MIL-PRF-19500 PD-94667C IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A

    Untitled

    Abstract: No abstract text available
    Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides


    Original
    PDF O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-94764D RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB IRHLUB7970Z4 60V, P-CHANNEL TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.3Ω -0.53A IRHLUB7930Z4 300K Rads (Si) 1.3Ω -0.53A International Rectifier’s R7TM Logic Level Power


    Original
    PDF PD-94764D IRHLUB7970Z4 IRHLUB7930Z4 MIL-PRF-19500/255L

    IRHMS63264

    Abstract: IRHMS67264
    Text: PD-96991 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS67264 100K Rads (Si) 0.041Ω IRHMS63264 300K Rads (Si) 0.041Ω ID 45A 45A International Rectifier’s R6TM technology provides


    Original
    PDF PD-96991 O-254AA) IRHMS67264 IRHMS67264 IRHMS63264 90MeV/ O-254AA. MIL-PRF-19500

    IRHYS63234CM

    Abstract: IRHYS67234CM
    Text: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides


    Original
    PDF PD-97193 O-257AA) IRHYS67234CM IRHYS67234CM IRHYS63234CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-96923 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


    Original
    PDF PD-96923 IRHNJ67230 IRHNJ63230 90MeV/ MIL-STD-750, MlL-STD-750,

    IRHY593230CM

    Abstract: IRHY597230CM T0-257AA
    Text: PD - 94319A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5TM technology provides


    Original
    PDF 4319A O-257AA) IRHY597230CM IRHY597230CM IRHY593230CM 5M-1994. O-257AA. T0-257AA

    2N7599T3

    Abstract: No abstract text available
    Text: PD-95837A 2N7599T3 IRHY67C30CM 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


    Original
    PDF PD-95837A 2N7599T3 IRHY67C30CM O-257AA) IRHY67C30CM IRHY63C30CM 90MeV/ O-257AA. MIL-PRF-19500 2N7599T3

    IRHF593230

    Abstract: IRHF597230
    Text: PD - 94450 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHF597230 IRHF593230 Radiation Level RDS(on) ID 100K Rads (Si) 0.54Ω -4.5A 300K Rads (Si) 0.54Ω -4.5A International Rectifier’s R5TM technology provides


    Original
    PDF IRHF597230 IRHF593230 MIL-STD-750, MlL-STD-750, O-205AF IRHF593230 IRHF597230

    mev smd diode

    Abstract: No abstract text available
    Text: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides


    Original
    PDF PD-96959 IRHNA67164 IRHNA63164 90MeV/ MIL-STD-750, MlL-STD-750, mev smd diode

    IRHYS67230CM

    Abstract: IRHYS63230CM PD-96925B
    Text: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original
    PDF PD-96925B O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. PD-96925B

    IRHMS63160

    Abstract: IRHMS67160
    Text: PD-94723A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original
    PDF PD-94723A O-254AA) IRHMS67160 IRHMS67160 IRHMS63160 90MeV/ O-254AA. MIL-PRF-19500 IRHMS63160

    IRF 949

    Abstract: IRHNA63260 IRHNA67260
    Text: PD - 94342C RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028Ω 0.028Ω ID 63A 63A SMD-2 International Rectifier’s R6 technology provides


    Original
    PDF 94342C IRHNA67260 IRHNA67260 IRHNA63260 90MeV/ controll875A/ MIL-STD-750, MlL-STD-750, IRF 949

    IRHY597130CM

    Abstract: IRHY593130CM T0-257AA
    Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides


    Original
    PDF O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA. T0-257AA

    Untitled

    Abstract: No abstract text available
    Text: PD-96931 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides


    Original
    PDF PD-96931 IRHNJ67134 IRHNJ67134 IRHNJ63134 90MeV/ MIL-STD-750, MlL-STD-750,