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    SI TRANSISTOR MARKING Search Results

    SI TRANSISTOR MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    SI TRANSISTOR MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3SK22

    Abstract: 3SK222
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm Embossed Type Taping


    Original     		PDF 3SK222 3SK22 3SK222

    Untitled

    Abstract: No abstract text available
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description


    Original     		PDF IJW120R100T1

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


    Original     		PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide

    U94 marking

    Abstract: 3SK224
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D


    Original     		PDF 3SK224 P10576EJ2V0DS00 TD-2265) U94 marking 3SK224

    3SK254

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)


    Original     		PDF 3SK254 3SK254

    2SC254

    Abstract: 3SK254
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)


    Original     		PDF 3SK254 2SC254 3SK254

    3SK223

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB


    Original     		PDF 3SK223 3SK223

    transistor NEC 882 p

    Abstract: 3SK255
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Unit: mm (VDS = 3.5 V) V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage VG2S ±8*1 V


    Original     		PDF 3SK255 transistor NEC 882 p 3SK255

    3SK252

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) NF1 = 2.0 dB TYP. (f = 470 MHz) 2 GPS = 19.0 dB TYP. (f = 470 MHz)


    Original     		PDF 3SK252 3SK252

    3SK223

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB


    Original     		PDF 3SK223 3SK223

    diode u1G

    Abstract: 3SK253
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage


    Original     		PDF 3SK253 diode u1G 3SK253

    NEC k 1995 transistor

    Abstract: 3SK176A rf id based home appliances control
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. f = 470 MHz NF = 2.0 dB TYP. (f = 470 MHz)


    Original     		PDF 3SK176A NEC k 1995 transistor 3SK176A rf id based home appliances control

    transistor NEC D 882 p

    Abstract: nec d 882 p transistor NEC b 882 p nec d 882 p transistor transistor NEC 882 p NEC 882 p transistor NEC b 882 nec d 882 p transistor transistor transistor nec d 882 nec d 882
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low V dd Use Unit: mm (Vds = 3.5 V) 2 . 1+ 0.2 Driving Battery Low Noise Figure :


    OCR Scan     		PDF 3SK255 transistor NEC D 882 p nec d 882 p transistor NEC b 882 p nec d 882 p transistor transistor NEC 882 p NEC 882 p transistor NEC b 882 nec d 882 p transistor transistor transistor nec d 882 nec d 882

    3SK246

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK246 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS Unit : mm The C haracteristic of C ross-M odulation is good.


    OCR Scan     		PDF 3SK246 3SK246

    3SK242

    Abstract: SK242
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz


    OCR Scan     		PDF 3SK242 3SK242 SK242

    U94 marking

    Abstract: 3SK22 TD226 3SK224 U94
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise Figure: NF = 1.8 dB TYP. f = 900 MHz • High Power Gain: G ps •


    OCR Scan     		PDF 3SK224 U94 marking 3SK22 TD226 3SK224 U94

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz


    OCR Scan     		PDF 3SK254

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz • High Power Gain


    OCR Scan     		PDF 3SK252

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES = 24 dB TYP. f = 470 MHz • High Power Gain: G ps • Low Noise Figure: NF = 2.0 dB TYP. (f = 470 MHz)


    OCR Scan     		PDF 3SK176A

    3SK242

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : G Ps = 24 dB TYP. f = 200 MHz


    OCR Scan     		PDF 3SK242 3SK242-T1 3SK242-T2

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low V dd Use PACKAGE DIMENSIONS V ds = 3.5 V (Unit: mm) Driving Battery Low Noise Figure : NF = 1 .8 dB TYP. (f = 900 MHz)


    OCR Scan     		PDF 3SK253

    3SK243

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK243 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. CM = 101 d B /i TYP. @ f = 470 MHz, G r = -3 0 dB


    OCR Scan     		PDF 3SK243 3SK243

    benzene detection

    Abstract: TLP863
    Text: TOSHIBA TLP863 TOSHIBA PHOTO-INTERRUPTER VCRS, COMPACT DISC PLAYERS INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP863 COPIERS, FAX MACHINES, PRINTERS VENDING MACHINES, TICKET MACHINES The TLP863 photo-interrupters combines a GaAs infrared LED with a high-sensitivity Si


    OCR Scan     		PDF TLP863 TLP863 benzene detection

    3SK244

    Abstract: 3SK244D U94 marking
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK244 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • U ltra Low N o ise F ig u r e : NF = 2.2 dB T Y P . f = 900 M Hz • High P ow er G ain


    OCR Scan     		PDF 3SK244 3SK244 3SK244D U94 marking