3SK22
Abstract: 3SK222
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm Embossed Type Taping
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3SK222
3SK22
3SK222
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Untitled
Abstract: No abstract text available
Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description
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IJW120R100T1
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IJW120R070T1
Abstract: IJW120R silicon carbide
Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description
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IJW120R070T1
IJW120R070T1
IJW120R
silicon carbide
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U94 marking
Abstract: 3SK224
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D
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3SK224
P10576EJ2V0DS00
TD-2265)
U94 marking
3SK224
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3SK254
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)
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3SK254
3SK254
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2SC254
Abstract: 3SK254
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)
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3SK254
2SC254
3SK254
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3SK223
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB
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3SK223
3SK223
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transistor NEC 882 p
Abstract: 3SK255
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Unit: mm (VDS = 3.5 V) V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage VG2S ±8*1 V
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3SK255
transistor NEC 882 p
3SK255
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3SK252
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) NF1 = 2.0 dB TYP. (f = 470 MHz) 2 GPS = 19.0 dB TYP. (f = 470 MHz)
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3SK252
3SK252
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3SK223
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB
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3SK223
3SK223
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diode u1G
Abstract: 3SK253
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage
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3SK253
diode u1G
3SK253
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NEC k 1995 transistor
Abstract: 3SK176A rf id based home appliances control
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. f = 470 MHz NF = 2.0 dB TYP. (f = 470 MHz)
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3SK176A
NEC k 1995 transistor
3SK176A
rf id based home appliances control
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transistor NEC D 882 p
Abstract: nec d 882 p transistor NEC b 882 p nec d 882 p transistor transistor NEC 882 p NEC 882 p transistor NEC b 882 nec d 882 p transistor transistor transistor nec d 882 nec d 882
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low V dd Use Unit: mm (Vds = 3.5 V) 2 . 1+ 0.2 Driving Battery Low Noise Figure :
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3SK255
transistor NEC D 882 p
nec d 882 p
transistor NEC b 882 p
nec d 882 p transistor
transistor NEC 882 p
NEC 882 p
transistor NEC b 882
nec d 882 p transistor transistor
transistor nec d 882
nec d 882
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3SK246
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK246 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS Unit : mm The C haracteristic of C ross-M odulation is good.
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3SK246
3SK246
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3SK242
Abstract: SK242
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz
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3SK242
3SK242
SK242
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U94 marking
Abstract: 3SK22 TD226 3SK224 U94
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise Figure: NF = 1.8 dB TYP. f = 900 MHz • High Power Gain: G ps •
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3SK224
U94 marking
3SK22
TD226
3SK224 U94
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz
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3SK254
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz • High Power Gain
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3SK252
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES = 24 dB TYP. f = 470 MHz • High Power Gain: G ps • Low Noise Figure: NF = 2.0 dB TYP. (f = 470 MHz)
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3SK176A
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3SK242
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : G Ps = 24 dB TYP. f = 200 MHz
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3SK242
3SK242-T1
3SK242-T2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low V dd Use PACKAGE DIMENSIONS V ds = 3.5 V (Unit: mm) Driving Battery Low Noise Figure : NF = 1 .8 dB TYP. (f = 900 MHz)
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3SK253
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3SK243
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK243 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. CM = 101 d B /i TYP. @ f = 470 MHz, G r = -3 0 dB
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3SK243
3SK243
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benzene detection
Abstract: TLP863
Text: TOSHIBA TLP863 TOSHIBA PHOTO-INTERRUPTER VCRS, COMPACT DISC PLAYERS INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP863 COPIERS, FAX MACHINES, PRINTERS VENDING MACHINES, TICKET MACHINES The TLP863 photo-interrupters combines a GaAs infrared LED with a high-sensitivity Si
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TLP863
TLP863
benzene detection
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3SK244
Abstract: 3SK244D U94 marking
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK244 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • U ltra Low N o ise F ig u r e : NF = 2.2 dB T Y P . f = 900 M Hz • High P ow er G ain
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3SK244
3SK244
3SK244D
U94 marking
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