en3962
Abstract: transistor en3962 FP103 2SB1121 SB07-03C
Text: Ordering number:EN3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3962
FP103
FP103
2SB1121
SB07-03C,
FP103]
en3962
transistor en3962
SB07-03C
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FP102 equivalent
Abstract: 2SB1396 FP102 SB07-03C No39
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
FP102 equivalent
SB07-03C
No39
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AX-8060
Abstract: 2SB1121 FP101 SB05-05CP
Text: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3960
FP101
FP101
2SB1121
SB05-05CP,
FP101]
AX-8060
SB05-05CP
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TA 7503
Abstract: EC2D02B ECSP1006-2
Text: EC2D02B Ordering number : EN7503A SANYO Semiconductors DATA SHEET Shottky Barrier Diode EC2D02B 30V, 100mA Rectifier Applications • High frequency rectification switching regulators, converters and choppers . Features • • • Small switching noise.
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EC2D02B
EN7503A
100mA
100mA,
TA 7503
EC2D02B
ECSP1006-2
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2SB1396
Abstract: FP102 SB07-03C
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
SB07-03C
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3960
FP101
FP101
2SB1121
SB05-05CP,
FP101]
500mA
100mA,
250mm2Ã
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NTTD4401F
Abstract: NTTD4401FR2 NTTD4401FR2G
Text: NTTD4401F FETKYt Power MOSFET and Shottky Diode −20 V, −3.3 A P−Channel with 20 V, 1.0 A Schottky Diode, Micro8t Package The FETKY product family incorporates low RDS on , true logic level MOSFETs packaged with industry leading, low forward drop, low
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NTTD4401F
NTTD4401F/D
NTTD4401F
NTTD4401FR2
NTTD4401FR2G
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance.
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R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Shottky barrier diode RB420DFH Applications Low current rectification Land size figure Unit : mm Dimensions (Unit : mm) Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. ＋0.1 0.15 －0.06 (3) ＋0.2
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AEC-Q101
RB420DFH
S0T-346
SC-59
R1120A
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RB715F
Abstract: No abstract text available
Text: RB715F Diodes Shottky barrier diode RB715F zApplication Low current rectification zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.3 zFeatures 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. 2.0±0.2 0.15±0.05 0.9MIN. 0.8MIN. UMD3
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RB715F
OT-323
SC-70
RB715F
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch +SBD MOSFET TT8U2 Dimensions Unit : mm Structure Silicon P-channel MOSFET / schottky barrier diode TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).
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Pw10s,
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).
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R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB491D Application Low current rectification Lead size figure Unit : mm Dimensions (Unit : mm) 2.9±0.2 0.4 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.1 0.05 Each lead has same dimension
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RB491D
S0T-346
SC-59
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB706D-40 Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 2.9±0.2 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.4 0.1 0.05 Each lead has same dimension
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RB706D-40
S0T-346
SC-59
R1120A
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RB420D
Abstract: S0T-346
Text: Data Sheet Shottky barrier diode RB420D Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. ＋0.1 0.15 －0.06 (3) ＋0.2 1.6－0.1 2.8±0.2
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RB420D
S0T-346
SC-59
R1120A
RB420D
S0T-346
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Untitled
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB495D Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. ＋0.1 0.15 －0.06 (3) ＋0.2 1.6－0.1 2.8±0.2
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RB495D
S0T-346
SC-59
05MIN
R1120A
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Untitled
Abstract: No abstract text available
Text: SB01-05Q Ordering number : EN2932B SANYO Semiconductors DATA SHEET SB01-05Q Shottky Barrier Diode 50V, 100mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • Fast reverse recovery time (trr max=10ns)
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EN2932B
SB01-05Q
100mA
SB01-05Q-applied
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RB400D
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB400D Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 2.9±0.2 各リードとも 同寸法 lead has same dimension 0.4 ＋0.1 Each －0.05 ＋0.1 0.15 －0.06 (3) ＋0.2
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RB400D
S0T-346
SC-59
R1120A
RB400D
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RB425D
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB425D Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 2.9±0.2 各リードとも 同寸法 lead has same dimension 0.4 ＋0.1 Each －0.05 ＋0.1 0.15 －0.06 (3) ＋0.2
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RB425D
S0T-346
SC-59
R1120A
RB425D
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RB411D
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB411D Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 2.9±0.2 各リードとも 同寸法 lead has same dimension 0.4 ＋0.1 Each －0.05 ＋0.1 0.15 －0.06 (3) ＋0.2
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RB411D
S0T-346
SC-59
R1120A
RB411D
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RB491D
Abstract: No abstract text available
Text: RB491D Diodes Shottky barrier diode RB491D zApplication zExternal dimensions Unit : mm zLead size figure (Unit : mm) Low current rectification 2.9±0.2 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.95 0.15 －0.06 ＋0.2 (3) 2.8±0.2
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RB491D
S0T-346
SC-59
RB491D
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Untitled
Abstract: No abstract text available
Text: RB495D Diodes Shottky barrier diode RB495D zApplication General rectification. zExternal dimensions Unit : mm 2.9±0.1 各リードとも lead has ＋0.1 Each同寸法 0.4 zLead size figure (Unit : mm) same dimension －0.05 1.9 ＋0.1 0.15 －0.06 (1)
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RB495D
S0T-346
SC-59
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Untitled
Abstract: No abstract text available
Text: JUl 17 W* Æ J SGS-THOMSON DeœilLIS'irœiülDei T74LS86 QUAD 2-INPUT EXCLUSIVE OR GATE DESCRIPTION The T74LS86 is a high speed QUAD 2-INPUT EXCLUSIVE OR GATE fabricated in LOW POWER SHOTTKY technology. SCHEMATIC ORDER CODES : T74LS 86 D1 T74LS 86 B1 T74LS 86 C1
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T74LS86
T74LS86
T74LS
ilLI16TrBÂ
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T74LS86B1
Abstract: ATIC 17 D1 T74LS86
Text: ^ SGS-THOMSON T74LS86 QUAD 2-INPUT EXCLUSIVE OR GATE DESCRIPTIO N The T74LS86 is a high speed QUAD 2-INPUT EXCLUSIVE OR GATE fabricated in LOW POWER SHOTTKY technology. SCH EM ATIC B1 Plastic Package D1 (Ceramic Package) 40^ ^ M1 (Micro Package) C1 (Plastic Chip Carrier)
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OCR Scan
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T74LS86
T74LS86
T74LS
T74LS86B1
ATIC 17 D1
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