MD1222N
Abstract: shindengen m mos 245
Text: 2.5V-12V Output MD1222N 13.6 DESCRIPTION Dimensions = mm 14.1MAX + – 0.1 32 The MD1222N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and synchronous + 7.5 – SHINDENGEN M D1 2 2 2 N 5038N
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V-12V
MD1222N
MD1222N
5038N
32-pin
shindengen m
mos 245
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MD1320N
Abstract: No abstract text available
Text: 3.3V/5V Output MD1320N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1320N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and Schottky + 7.5 – SHINDENGEN MD1320N 5038N Barrier Diode. The MD1320N can deliver 7.5 watts maximum
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MD1320N
MD1320N
5038N
32-pin
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MD1422N
Abstract: 25V12V SHINDENGEN MD1422N
Text: 2.5V-12V Output MD1422N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1422N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and synchronous + 7.5 – SHINDENGEN MD1422N 5038N rectification MOSFET. The MD1422N can deliver high efficiency over
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V-12V
MD1422N
MD1422N
5038N
32-pin
25V12V
SHINDENGEN MD1422N
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low voltage mosfet switch 3 amp
Abstract: MD1421N 5038N
Text: 3.3V/5V Output MD1421N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1421N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and synchronous + 7.5 – SHINDENGEN MD1421N 5038N rectification MOSFET. The MD1421N can deliver 15 watts maximum
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MD1421N
MD1421N
5038N
32-pin
low voltage mosfet switch 3 amp
5038N
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Shindengen catalog
Abstract: shindengen zener
Text: 大容量面実装デバイス 単体 Power zener Diode •外形図 OUTLINE ST60-48MF ST60-48MF MCP Package Power Surface Mount Device Single Zener Diode ■特性図 CHARACTERISTIC DIAGRAMS Package : MCP Unit:mm Weight 1.5g 40V 6000W TI=25℃ 10/1000 s
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ST60-48MF
10/1000s
T125unless
30ntellectual
Shindengen catalog
shindengen zener
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2N60738
Abstract: 2N60758 2N60718 2N6626 2N6140 2N6144 Motorola 2n5060 2SF120 ANSALDO MOTOROLA LSC
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2N4947
2N4948
2N4949
2N4986
2N4993
2N5060
2N5061
2N5062
2N5063
2N5064
2N60738
2N60758
2N60718
2N6626
2N6140
2N6144
Motorola 2n5060
2SF120
ANSALDO
MOTOROLA LSC
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MR2920
Abstract: MR2940 SHINDENGEN MR2520 MR2520 AC180276V kick circuit drain MR2000 MR2540 mr2520 equivalent AC180
Text: Vol.02-06-e / June2002 MR2000 Series Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT Shigeru Hisada - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Joined the company in 1991 1 Introduction
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02-06-e
June2002
MR2000
MR2920
MR2940
SHINDENGEN MR2520
MR2520
AC180276V
kick circuit drain
MR2540
mr2520 equivalent
AC180
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MR1721
Abstract: MR1520 MR1000 TH101 TR201 AC180276V mr1520 equivalent AC180 mr15 c103 shindengen
Text: Vol.02-05-e / June2002 MR1000 Series Standby-compatible Partial Resonance Power Supply IC Modules Masaaki Hayashi - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Assistant Manager Joined the company in 1989 1 Introduction Energy conservation guidelines from the Ministry of Economy,
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02-05-e
June2002
MR1000
100mW
MR1721
MR1520
TH101
TR201
AC180276V
mr1520 equivalent
AC180
mr15
c103 shindengen
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BT136-600E equivalent
Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.
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10TQ045S
11DQ03
11DQ04
11EQ03
11EQ04
11EQS
15DF4
1N3645
BT136-600E equivalent
D2499 equivalent
D1878 equivalent
BT139-600 equivalent
C4927
d1577
d1554
C5386
c5129
e13005 equivalent
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HBET3R3300N
Abstract: 251f CF43X7R223K1000AT CISPR class B CM21W5R tokin 6.3a DC48V 1SS400TE61 w584 HBET2R5350
Text: Updated : 2008.7.30 5RE-080159-4 新電元工業株式会社 絶縁型小型大容量 DC/DC コンバータ HBET シリーズ電源モジュール 取扱説明書 入力電圧 36～75Vdc出力電圧 1.2～12.0V 48W～108W までをシリーズ化 概要
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5RE-080159-4
3675Vdc
48W108W)
3675Vdc
DC48V
48VIout
DC1500V
UL60950
EN60950CE
HBET3R3300N
251f
CF43X7R223K1000AT
CISPR class B
CM21W5R
tokin 6.3a
DC48V
1SS400TE61
w584
HBET2R5350
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1SS400TE61
Abstract: CF43X7R223K1000AT C3225X7R2A105Mt cm21w5r DC48V UPS2A330MPD1TD 9A13 w584 HBQ12R CM21W5R683K50AT
Text: 5RE-080143-2 Updated : 2008/08/06 新電元工業株式会社 絶縁型小型大容量 DC/DC コンバータ HBQ12R180 電源モジュール 取扱説明書 入力電圧 36～75Vdc出力電圧 12V 概要 HBQ12R180 電源モジュールは、業界標準サイズの Quarter Brick サイズの DC/DC コンバータです。
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5RE-080143-2
HBQ12R180
3675Vdc
DC48V
H12mm
48VIout
DC1500V
UL60950
1SS400TE61
CF43X7R223K1000AT
C3225X7R2A105Mt
cm21w5r
DC48V
UPS2A330MPD1TD
9A13
w584
HBQ12R
CM21W5R683K50AT
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ISS106
Abstract: SK3002 ERE81B004 BYV21-30 BYV21-40 BYV21-45 MBR5831H1 BYV21-35 nihon inter SK3004
Text: SCHOTTKY RECTIFIERS Item Number Part Number Manufacturer lo Max VRRM •FSM Max A (V) (A) (V) VF IF @ IR Test (A) (A) IR VR 25 °C @ Test 00 @ T2 Test 'Oper Package Style Max c CC) 10m 10m 10m 150m 150m 150m 150m 250m 150m 150m 150m 150 150 150 125 100 100
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MR2400F
MR2401F
MR2402F
SBR2520
1N5829
MBR2520
SBR2525
1N6095
SBR2530
1N5830
ISS106
SK3002
ERE81B004
BYV21-30
BYV21-40
BYV21-45
MBR5831H1
BYV21-35
nihon inter
SK3004
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EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
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PBYR3045WT
BYD73D
CTB34M
BYD73G
SB1035
PBYR1040
1N5059
SB1040
EQUIVALENT BYD33D
1n5062 equivalent
SUF5402
diode cross reference BYS21-45
BYS21-45
1N4007 general instruments
BY255 itt
da3/1000
1N6644
FR207 equivalent
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BTA136
Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Text: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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05NH45
05NH46
05NU41
05NU42
0R8GU41
5KA10
5KA10A
5KA11
5KA11A
5KA12
BTA136
ft0818mw
SM4007 Panjit
BY288
FT2516NH
FS0802NH
FT0817MH
ft1208MW
ft0618mh
equivalent components of diode her207
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10-80 v input step down with mosfet
Abstract: MD1421N
Text: Shindengen @ America, Ine 3.3V/5V Output MD1421N 14.1 MAX DESCRIPTION Dimensions = mm The MD1421N is a high-efficiency step down DC-DC converter Company Name Type No. power integrated circuit with main MOSFET switch and synchronous _ rectification MOSFET. The MD1421N can deliver 15 watts maximum
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MD1421N
MD1421N
5038N
32-pin
10-80 v input step down with mosfet
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MD1422N
Abstract: 25V12V LS12A
Text: 2.5V-12V Output MD1422N Shindengen @ America.Inc. DESCRIPTION The MD1422N is a high-efficiency step down DC-DC converter power integrated circuit with main MOSFET switch and synchronous rectification MOSFET. The MD1422N can deliver high efficiency over a wide input voltage range. This device has output voltage digitally
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V-12V
MD1422N
MD1422N
32-pin
40VDC
25V12V
LS12A
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SHINDENGEN TR 222
Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
Text: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5
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OCR Scan
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PDF
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SIYB20
S1ZB20
S1NB20
S1WBA20
S1VB20
S1VBA20
S1YB60
S1ZB60
S1NB60
S1WBA60
SHINDENGEN TR 222
D2S860
D25VB60
F10LC20U
S1WBA60B
D15VBA
d15vba60
D4SBA80
DF25SC6M
d3sb60 86
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shindengen m
Abstract: No abstract text available
Text: Shindengen 3.3V /5V Output MD1320N 14.1 M AX Dimensions = mm Americajnc. DESCRIPTION 13.6 : The M D1320N is a high-efficiency step down DC-DC converter 17 32 Company Name power integrated circuit with main M O SFET switch and Schottky Type No. Barrier Diode. The M D1320N can deliver 7.5 watts maximum
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OCR Scan
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PDF
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MD1320N
D1320N
MD1320N
5038N
32-pin
shindengen m
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Untitled
Abstract: No abstract text available
Text: L V X v U -X y\°7 - M 0 S F E T iS S S ^ - T LVX S e rie s P ow er MOSFET OUTLINE DIMENSIONS S 2 K 1 8 1 1 Case •MTO-3P F20W30 300V 20A [ U n it ! m m ] 5.Q ±0-3 2.2 1 i 3.3 Q 'ï n a # ( » j ) D a te c o d e • A * S * (C iss) ¡eic-tf□ ; u 77,mcoAtismm^i v
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OCR Scan
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F20W30)
K1811
62n3fl7
2SK1811
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Shindengen sh
Abstract: marking code PHII D1FJ10 BS 531 shindengen m Schottky Diode Marking UX Shindengen sh 579 Shindengen sh 579 ja
Text: SCHOTTKY 1. Absolute Maximum Ratings Item T l= BARRIER DIODE SPECIFICATION 2 5°C unless otherwise sp ecifie d Conditions Symbol Operating junction Temperature Max reverse voltage V Average r e c tifie d Forward current I 0 5 OHz Sine wave, Resistance load
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D1FJ10
Shindengen sh
marking code PHII
BS 531
shindengen m
Schottky Diode Marking UX
Shindengen sh 579
Shindengen sh 579 ja
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S4UG
Abstract: DF25SC6M SHINDENGEN 33 s60sc4m
Text: •S •Bl » K; m -i. •4 M I at » na* m ff! 3} 9t äS äs 3t 3t 2 lat ? ’S . % 2 9t -o æ 2 -X -X H H m vi pW- i ridi m m. >ii wt N> I a rS IH 3? W > 9tt >4 ° c m m ga (£ — < V fH] $ 38 fit h£ 35 ^ d a vt A ^ I S EG -/I 9' Si Vt A m m ■H a I V*
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OCR Scan
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IN5363B
Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Text: Cross Reference Every care has b een taken in compiling this cross referen ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any
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OCR Scan
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PDF
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03NH45
05NH46
05NU41
05NU42
0R8GU41
5KE10
5KE10Û
5KE100A
5KE100CA
5KE10CCF
IN5363B
IN5361B
P6KEI5CA
IN5956B
TFK S 417 T
IM200Z
in5349b
IN5384B
in5366b
P6KEI5A
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Untitled
Abstract: No abstract text available
Text: v a 7 h y Schottky Barrier Diode O S Twin Diode o u t l in e d i m e n s io n s D10SC6M 60 V Case : ITO-220 10 A « s •Tjl5C TC • P • I r r s m Z ^ IÆ -J U K ffl % •S R S 3 S • * « . y -A . • a « . J K - S 'y im s s rn OAfSâË Absolute Maximum Ratings
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OCR Scan
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PDF
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D10SC6M
ITO-220
50HziY/
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Untitled
Abstract: No abstract text available
Text: y a v h 7 Schottky Barrier Diode S Twin Diode MMrtfèm D10SC4M OUTLINE DIMENSIONS C a se : ITO-220 40V 10A • T j 15013 • P rr sm ffl & •S R g • D C / D C H V A '- ^ 0 A * ü •m m . > f - h . • a s , x — s > 7 u m s i •i&Ë&JS^AElfë Absolute Maximum Ratings
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OCR Scan
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D10SC4M
ITO-220
GQD3S13
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