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    Untitled

    Abstract: No abstract text available
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


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    PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-PIN OP028-P-0450)

    Untitled

    Abstract: No abstract text available
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


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    PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-PIN OP028-P-0450)

    sharp mask rom

    Abstract: LH530900 sharp lh53 1M
    Text: CMOS 1M 128K x 8 Mask Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH530900A is a mask programmable ROM organized as 131,072 x 8 bits (1,048,576 bits). It is fab­ ricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


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    PDF 32-pin, 600-mil 32-pin 28-pin LH530900A LH530900A I-------15 sharp mask rom LH530900 sharp lh53 1M

    lh53

    Abstract: No abstract text available
    Text: CM O S 1M 128K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 131,072 • Access time: 150 ns (MAX.) • Power consumption: Operating: 193 mW (MAX.) Standby: 550 \i\N (MAX.) • Fully-static operation • TTL compatible I/O • Three-state outputs


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    PDF 32-pin, 600-mil 525-mil 44-pin, 30800A LH530800A DIP32-P-600) lh53

    LH53820

    Abstract: LH538200 lh538200d20 LH538 lh5382
    Text: CMOS 8M 1M FEATURES • 1,048,576 x 8 bit organization • Access time: 200 ns (MAX. • Power consumption: Operating: 275 mW (MAX.) x 8) Mask Program mable ROM DESCRIPTION The LH538200 is a mask programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using


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    PDF LH538200 32-pin, 600-mil 28-pin 32-PIN LH538200 DIP32-P-600) LH538200D-20 LH53820 lh538200d20 LH538 lh5382

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


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    PDF LH531000B-S 28-pin, 450-mil 28-PIN I000B OP028-P-0450)

    LH53

    Abstract: LH538100
    Text: CMOS 8M 1M x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 ,048,576 x 8 bit organization The LH538100 is a mask-programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 200 ns (MAX.)


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    PDF LH538100 32-PIN 32-pin, 600-m 525-m LH538100 32-pin. 600-mil LH53

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


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    PDF LH531000B-S 28-pin, 450-mil OP028-P-0450) LH531000BN-S

    LH538100

    Abstract: sharp mask rom sharp lh53 sharp lh53 1M
    Text: CMOS 8M 1M x 8 Mask Programmable ROM FEATURES • 1,048,576 x 8 bit organization • Access time: 200 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) DESCRIPTION The LH538100 is a mask programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using


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    PDF LH538100 32-PIN 32-pin, 600-mil 525-mil LH538100 32-Din. sharp mask rom sharp lh53 sharp lh53 1M

    sharp mask rom 44-pin

    Abstract: sharp lh53 D72120
    Text: C M O S 1M 128K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 131,072 x 8 bit organization • Access time: 150 ns (MAX.) 32-PIN DIP • Power consumption: Operating: 193 mW (MAX.) Standby: 550 jiW (MAX.) • Fully-static operation • TTL compatible I/O


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    PDF 32-pin, 600-mil 525-mil 44-pin, LH530800A 32-PIN DIP32-P-600) sharp mask rom 44-pin sharp lh53 D72120

    431 capacitor NCC

    Abstract: No abstract text available
    Text: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)


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    PDF LH531000B LH531000B 28-pin, 600-m 450-m 44-pin, 28-PIN 600-mil 431 capacitor NCC

    sharp mask rom 44-pin

    Abstract: 1417D lh53
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)


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    PDF 28-pin, 600-mil 450-mil 44-pin, 14x14 44-PIN LH531000B 28-PIN sharp mask rom 44-pin 1417D lh53

    LH5316000

    Abstract: lh53 64pin
    Text: CMOS 16M 2M x 8 / 1M x 16 Mask-Programmable ROM LH 5316000 FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) DESCRIPTION The LH5316000 is a mask-programmable ROM


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    PDF LH5316000 64-PIN LH5316000 64-pin, 750-mil SDIP64-P-750) QFP64-P-1420) LH5316000D-20 lh53 64pin

    a5c capacitor

    Abstract: sharp mask rom LH5316000 64 pin CMOS MASK ROM
    Text: LH5316000/ FEATURES • 2,097,152 x 8 bit organization Byte mode 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Power consumption: CMOS 16M (2M x 8 / 1M x 16) Mask Programmable ROM


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    PDF LH5316000/ 64-pin, 750-mil LH5316000 64-PIN LH5316000 SDIP64-P-750) a5c capacitor sharp mask rom 64 pin CMOS MASK ROM

    sharp lh53

    Abstract: sharp lh53 1M
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


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    PDF LH531000B 28-pin, 600-m 450-m 44-pin I-------15 600-mil DIP28-P-600) sharp lh53 sharp lh53 1M

    DIP-32P

    Abstract: No abstract text available
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 193 mW (MAX.) Standby: 550 (MAX.) PIN CONNECTIONS / • Fully static operation • TTL compatible I/O • •


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    PDF 32-pin, 600-mil 525-mil 44-pin, 44-PIN 53080M LH530800A DIP-32P

    Untitled

    Abstract: No abstract text available
    Text: CMOS 4M 512K x 8 Mask Programmable ROM FEATURES • 524,288 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: DESCRIPTION The LH534400A is a mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


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    PDF LH534400A 32-PIN 32-pin, 600-mil LH534400A I------15 DIP32-P-600) LH534400AD-15

    lhmn5

    Abstract: 2600T LH5332600T LH53 DA-14-L
    Text: I LH53 3 2 6 00 T C O N T E N T 1 S 1 J. General Description P. 2 2. Features P. 2 3. Block Diagram P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute Maximum Ratings P. 5 n t. Operating Ranges P. 5 8. D.C. Electrical Characteristics P. 5 9. A. C. Electrical Characteristics


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    PDF 2600T Q017174 LH5332600T -1-A20 A0-A20 D0-D15 DG1717S lhmn5 2600T LH53 DA-14-L

    d1545

    Abstract: No abstract text available
    Text: PRELIMINARY LH538600 FEATURES • 1,048,576 x 8 bit organization Byte mode 524 ,2 8 8 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (M AX.) • Power consumption: Operating: 3 8 5 mW (M AX.) Standby: 55 0 jiW (M AX.)


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    PDF LH538600 42-pin, 600-m 44-pin, 48-pin, 64-pin, 42-PIN d1545