7326
Abstract: 13B1 LH5116NA SHARP
Text: LH5116NA sharp 2 LH5116NA sharp 3 LH5116NA sharp 4 LH5116NA sharp 5 LH5116NA sharp 6 LH5116NA sharp 7 LH5116NA sharp 8 LH5116NA sharp 9 LH5116NA sharp 10 LH5116NA 11 LH5116NA 12 LH5116NA sharp 13 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications if any are for standard use; See Important Restrictions for limitations on special applications. See Limited
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LH5116NA
7326
13B1
LH5116NA
SHARP
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transistor GW 93 H
Abstract: 100-PIN
Text: LH51V1032C4 PRELIMINARY 32K x 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs highspeed, low-power CMOS designs using a thin-film transistor memory cell. Sharp SRAMs are fabricated using
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LH51V1032C4
100TQFP
100-pin
LH51V1032C4-15
51V1032C4-11
transistor GW 93 H
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24S0P
Abstract: No abstract text available
Text: Search Europe SME SHARP Microelectronics Europe LH5116NA - 10F Sales and Technical Information Product Groups System Solutions Support Product Overview 5V SRAM Product Discontinued, refer to Where to Buy PCN Press Room PRODUCT DETAIL INFORMATION Jobs About Us
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LH5116NA
24S0P
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BUY 80
Abstract: No abstract text available
Text: Search Parts Inventory Sharp Microelectronics of the Americas LH5164AN-80L Sales and Technical Information Product Groups Syste m Solutions Support Product Overview 5V SRAM W he re to Buy Pre ss R oom PRODUCT DETAIL INFORMATION Jobs About Us Attribute Name
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LH5164AN-80L
64k-bit,
28SK-DIP
BUY 80
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CV522
Abstract: LH5164ASHN S0P40-P-6 EIA481A LH516AS8 AA9 marking
Text: SHARP 1 LH516AS8 Contents 1. Description . 2 2. Pin Configuration . 2 3. Truth Table . 3 4. Block Diagram .
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LH516AS8
516AS8
EC28SPTS
CV524
16AS8
S0P14â
S0P16â
OP24-P-450
OP28-P-45Ã
OP32-P-525
CV522
LH5164ASHN
S0P40-P-6
EIA481A
AA9 marking
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LH516AH
Abstract: No abstract text available
Text: SHARP SHARP LH516AH # Handle this document carefully or it contains aaterial protected by international copyright la*. Any reproduction, full or in part, of this u t e r i a l is prohibited without the express w ritten permission of the company. # When using the products covered herein, please observe the conditions w ritten herein
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LH516AH
LH51I4
AA192
DP600SPK-A2
LH516AH
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LH51V54T
Abstract: No abstract text available
Text: SHARP LH51V54T 1 Contents 1. Description . 2. Pin Configuration . 3. Truth Table . 4. Block Diagram . *. . 5. Absolute Maximum Ratings . . 6. Electrical Characteristics
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LH51V54T
0D172SM
1V54T
0017HS5
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Untitled
Abstract: No abstract text available
Text: SHARP SHARP L H S C 16 £ Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. • When using the products covered herein, please observe the conditions written herein
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LHSC16
LH51V1016JS-70LL
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HJR 4102
Abstract: ktir LH5164A
Text: I - . SHARP •LH 5 1 6 A 1 Contents 1. Description 2. Pin Configuration 3. Truth Table 4. Block Diagram . 2 . 2 .
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DIP28-P-600
HJR 4102
ktir
LH5164A
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16a80
Abstract: LH5164A-80L DIP28
Text: SHARP 1 LH 5 1 6 A8 0 Contents 1. Description 2. Pin Configuration 3. Truth Table 4. Block Diagram . 2 . 2 .
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DIP28â
AA852
16A80
CV651
16a80
LH5164A-80L
DIP28
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200n3
Abstract: LH5168Y2 LH5158 9N11 LH5168V2 CVS22 mrk packing KOWA uoc top 80 pin tv nana le
Text: SHARP 1/ LH 5 16 8V 2 Contents 1. General D escription . 2 2. Pin Configuration . . 2 3- Operating Mode 3 4. Block Diagraa
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LH5168Y2
CV874
11BER
P14-P-225
SQP24-M50
EQR24
P28-P-450
SQP32-P-S25
P44-P-Ã
ECR24-1
200n3
LH5168Y2
LH5158
9N11
LH5168V2
CVS22
mrk packing
KOWA
uoc top 80 pin tv
nana le
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Untitled
Abstract: No abstract text available
Text: SHARP» LH51B0HY 1 Contents 1. Description 2. Pin Configuration 2 . 2 3. Truth Table 3 4. Block Diagraa 3 5. Absolute Maxiaua Ratings 4 6. Recomtended DC Operating Conditions 4 7. DC Electrical Characteristics
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LH51E0HY
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Untitled
Abstract: No abstract text available
Text: SHARP LH5 1 6 AV1 1 Contents 1. Description 2 2. Pin Configuration 2 3. Truth Table 4. Block Diagram . 3 . 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions
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P28-P-450
16AV1
OP28SPN-A2
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Untitled
Abstract: No abstract text available
Text: LH51V2016JS-85LL 128K • 16 SRAM Model No.: LH2V266S Spec No.: MS-J10402 Issue Date: May 28, 1998 NOTE: This document contains initial characterization limits that are subject to change upon full characterization of product devices. SHARP L H S V 2 6 6 S
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LH51V2016JS-85LL
LH2V266S)
MS-J10402
LH51V2016JS
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DDCH715
Abstract: LH5168SHN
Text: SHARP CORP LH5168SH FEATURES • 8,192 x 8 bit organization • Access time: 500 ns MAX. • Low-current consumption: Operating: 20 mA (MAX.), ]> CMOS 64K (8K The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS
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LH5168SH
28-pin,
450-mil
LH5168SH
28-pin
OP28-P-45Q)
LH5168SHN
DDCH715
LH5168SHN
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LH5160N
Abstract: h01203
Text: n SHARP 29 m j TO: IKiiii-'iìiìENCE DEVICE SPECIFICATION FOR 64K bit STATIC RAM 8,192 X 8bit MODEL NO. L H 5 1 6 H N - 1 L ( LH5160N8 ) SPEC N O . : EL02Y011 ISSUE: Dec.13.1990 CUSTOMERS APPROVAL DATE: PRESENTED BY: BY: Y.TOI^RCRU Dept. General Manager
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LH5160N8
EL02Y011
LH5160N
h01203
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lh5116na-10
Abstract: LH5116N
Text: SHARP CORP blE D m LH5116 ÜOOtî t 7fl b3b «SRPJ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process
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LH5116
LH5116H:
24-pin,
600-mil
300-mi
450-mi
24-PIN
lh5116na-10
LH5116N
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LH5168D-10L
Abstract: tsop 338 IR LH5168 LH5168H
Text: SHARP CORP h lE LH5168 FEATURES • 8,192 • Access times: 80/100 ns MAX. • Low-power consumption: Operating: 303 mW (MAX.) LH5168/D/N @ 80 ns 248 mW (MAX.) LH5168/D/N/T/TR @ 100 ns 275 mW (MAX.) LH5168H/HD/HN @ 100 ns Standby: 5.5 jiW (MAX.) LH5168/D/N/T/TR
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LH5168
LH5168/D/N
LH5168/D/N/T/TR
LH5168H/HD/HN
LH5168/D/N/T/TR
LH5168:
-10to
LH5168H:
28-pin,
LH5168D-10L
tsop 338 IR
LH5168
LH5168H
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Untitled
Abstract: No abstract text available
Text: SHARP CORP blE » LH51256L FEATURES Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (Ta = -40 to 85°C, minimum cycle) Standby: 5.5 (MAX.) (Ta = 0 to 60°C) DESCRIPTION The LH51256L is a 256K bit static RAM organized as 32,768 x 8 bits which provides low-power standby
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LH51256L
28-pin,
600-mil
450-mil
28-pin
LH51256
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CVS22
Abstract: I200A
Text: SHARP SPEC No. E L 0 7 Y 0 8 5 ISSU E: Dec. 01 1995 To ; - REFERENCE SPECIFICATIONS Product Type 64k SRAM L H 5 1 64ASHN Kodel No. LH516AS8 JKThis specifications contains 2 0 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.
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64ASHN
LH516AS8)
LH516AS8
200mm
CV522
EC28SPTS
CV524
OPW-P-225
OP16-P-225
P24-P-450
CVS22
I200A
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TC551001a
Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
Text: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##
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HY6264A
M5M5165P
MS6264
SRM2264
KM6264
LH5168
CXK5864B
TC5565
HY62256A
MB84256A
TC551001a
CXK584000
Fujitsu FLL 100
cxk58527
uPD434000
M5M51008
SRM20256
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LH5114
Abstract: LH5114H15 LH5114H
Text: blE D SHARP CORP • Ô1Û07TÔ GODTbVe llâ « S R P J LH5114 FEATURES • 1,024 • Access time: 150 ns MAX. • Power consumption: Operating: 20 mA (MAX.) Standby: 5 nA (MAX.) x 4 bit organization CMOS 4K (1K x 4) Static RAM DESCRIPTION The LH5114H is a static RAM organized as 1,024
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LH5114
LH5114H
18-pin,
300-mil
28-PIN
5114H3
LH5114H-15
LH5114
LH5114H15
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164AH-10L
Abstract: LH5164AH-10L marking code CEI
Text: I ' SHARP ‘ LH 5 1 6 AH 1 Contents 1. Description 2 2. Pin Configuration 2 3. Truth Table * . 3 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions 4 7. DC Electrical Characteristics 4 8. AC Electrical Characteristics
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DIP28-P-60Ã
164AH-10L
LH5164AH-10L
marking code CEI
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 32K x 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs high speed, low-power CMOS designs using a thin-film tran
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100-pin
DES10.
LH51V1032
LH51V1032C4
100TQFP
TQFP-1OO-P-1420)
LH51V1032C4
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