6-1419130-5
Abstract: No abstract text available
Text: OUAZ-SH-112L,900 Product Details - Tyco Electronics Corporate Home | Page 1 of 1 Worldwide Electronic Components | Segments | Who We Are Search Products Documentation Resources My Account Customer Support OUAZ-SH-112L,900 Product Details Quick Links Communications/Signal PC Board Relays
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OUAZ-SH-112L
6-1419130-5
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 18NM70-SH Preliminary Power MOSFET 18A, 700V N-CHANNEL SUPER-JUNCTION MOSFET 1 DESCRIPTION The UTC 18NM70-SH is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,
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18NM70-SH
18NM70-SH
O-220F
O-220
O-220F1
O-220F2
QW-R205-076
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MTK-40132
Abstract: V3V REV-1.1 mtk 47 k mpi cable pin details nb 358 d MTK40132 6323 GA Hsd h0 40130 MTC-30132-SO-C
Text: MTK-40130/2 0301 [1] MTK-40130 SH POTS chipset MTK-40132 SHPOTS_µP chipset MTC-20231 / MTC-20233 CODSP MTC-30132 SH LIC Data Sheet Rev. 1.1 - August 2001 Key Features General Description • Software programmable transmission and signaling characteristics complies with world-wide requirements
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MTK-40130/2
MTK-40130
MTK-40132
MTC-20231
MTC-20233
MTC-30132
K20/K21
V3V REV-1.1
mtk 47 k
mpi cable pin details
nb 358 d
MTK40132
6323 GA
Hsd h0
40130
MTC-30132-SO-C
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OHIO45444
Abstract: 54FCT841A
Text: REVISIONS LTR DESCRIPTION DATE YB-MO-OA APPROVED REV SH EET REV SH EET REV STATUS OF SH EETS REV SH EET 1 2 3 PMICN/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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10-BIT
5962-E858
SC5013X
9Z527
1DT54FCT841ALB
VJ54FCT841ADL
5962-8857502KX
IDT54FCT8418EB
5962-8857502LX
IDT54FCT841BDB
OHIO45444
54FCT841A
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SH EET REV SH EET REV STATUS OF SH EETS REV SH EET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A 1 2 4
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5962-8862401JX
CD54HCT4059F/3A
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DIODE SMD V05
Abstract: sMD .v05 smd V05 qml-38535 sei smd resistors OMCT smd marking code v05 MIL-1-38535
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SH EET REV SH EET RFV STATU S OF SH EETS RE:V SH EET 1 P M IC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR U SE BY ALL DEPARTMENTS AND AGEN CIES OF THE DEPARTM ENT OF DEFENSE 3 ? 4 5
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QML-38535.
QML-38535
MIL-BUL-103.
MIL-BUL-103
DIODE SMD V05
sMD .v05
smd V05
sei smd resistors
OMCT
smd marking code v05
MIL-1-38535
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74S129
Abstract: b1664 54ACT573
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPR O VED ) R EV SH EET R EV SH EET R EV STATUS O F SH EETS REV 1 SH EET PM IC N/A J THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE A M S C N/A a m 3 4 5 6 7 8 9 10
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74S-129/60V11
5962-E1258
6640lRX
54ACf673bl*
CT573F/3A
596e-B766401SX
Act573FMQ6
5962-8t6640l2X
54ACTI573LM5B
74S129
b1664
54ACT573
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marking M9u
Abstract: 5962-E1257-2
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED R EV SH EE T REV SH EET R E V STATUS O F SH EETS REV SH EET 1 PM ICN /A 4 5 6 7 8 9 10 11 12 13 14 15 DEFENSE ELECTRO NICS SU PPLY CENTER DAYTON, OHIO 45444 CMA In fA / n A y s . A tt DR/ iWING APPR O V A L^ ffË T '
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S61772
IDT54FCT533ADB
P54PCT533ADMB
5962-8865102SX
IDT54FCT533AEB
5962-88651022X
IDT54FCT533ALB
P54PCT533ALMB
1M8-M9-B04
marking M9u
5962-E1257-2
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TD62308BP-1/BF TO SH IBA BIPO LAR D IGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TD62308BP-1, TD62308BF 4ch LOW INPUT ACTIVE HIGE-CURRENT DARLINGTON SINK DRIVER The TD62308BP-1 and TD62308BF are non-inverting transistor array which are comprised of four NPN
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TD62308BP-1/BF
TD62308BP-1,
TD62308BF
TD62308BP-1
TD62308BF
DIP-16pin
PFP-16pin
6-P-300-2
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RCA Solid State
Abstract: smd code marking NY
Text: <r REVISIONS LTR DESCRIPTION DATE YH-MO-OA APPROVED (T REV SH EET REV SHEET REV STATUS OF SH EETS REV SH EET PMICN/A 1 2 THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A n 4 5 6 7 8 9 10 11 PREPARED BY
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5962-8970901CX
CD54HCT11F/3A
RCA Solid State
smd code marking NY
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TPS807
Abstract: No abstract text available
Text: T O SH IB A TPS807 TO SH IBA PHOTO IC SILICON EPITAXIAL PLANAR TPS807 PHOTO IC FOR PHOTO INTERRUPTER U n it in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • TPS807 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.
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TPS807
TPS807
900nm
TLN107A,
TLN107A
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A1DK
Abstract: No abstract text available
Text: TO SH IBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP3041, TLP3042, TLP3043 DATA GaAs IRED & PHOTO-TRIAC T L P 3 0 4 1 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY The T O SH IBA TLP3041, TLP3042 and TLP3043 consist of a zero
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TLP3041,
TLP3042,
TLP3043
TLP3042
TLP3043
TLP3041)
TLP3042)
TLP3043)
VDE0884/08
A1DK
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TD62M4503AFN TO SH IBA BIPO LAR D IGITAL INTEGRATED CIRCUIT M ULTI-CHIP Tnfi7M ARn3AFN • MF' ^«F ■V ■ ■ MF MF M » ■ BW POWER MOS FET 4CH SINK DRIVER TD62M 4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2 S K 1 0 7 8 x4 and Diodes
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TD62M4503AFN
TD62M
4503AFN
10O/xA
SSOP24-P-300-0
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DIODE smd marking v1H
Abstract: 54HC113 K2191
Text: R E V IS IO N S LTR DA TE YR-MO-DA D E S C R IP T IO N APPRO VED REV SH EET REV SH EET R E V STA TU S OF SH EETS REV SH EET 1 2 3 4 6 5 7 8 9 10 11 12 13 P REPA RED B Y P M IC N/A D E F E N S E E L E C T R O N IC S S U P P L Y C E N T E R DAYTON, OHIO 45444
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5962-E1347
DIODE smd marking v1H
54HC113
K2191
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Untitled
Abstract: No abstract text available
Text: TD62781,782AP/F/AF T O SH IB A TO SH IBA BIPO LAR D IGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TD62781AP, TD62781F, TD62781AF TD62782AP, TD62782F, TD62782AF 8CH HIGH-VOLTAGE SOURCE DRIVER The T D 6 2 7 8 1 A P /F /A F Series are comprised of eight source current Transistor Array.
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TD62781
782AP/F/AF
TD62781AP,
TD62781F,
TD62781AF
TD62782AP,
TD62782F,
TD62782AF
DIP18-P-300-2
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1SV160
Abstract: No abstract text available
Text: TO SH IBA 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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1SV160
SC-59
1SV160
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SII -5 2 S K 1 357 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER A N D M OTOR DRIVE APPLICATIONS. • • • • 2SK1357 ^0^7550 00232flb 275 INDUSTRIAL APPLICATIONS
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2SK1357
00232flb
20kfi)
0023b43
O-220SM
Q023b44
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340XR
Abstract: No abstract text available
Text: PCMCIA, POWER AND MOTOR CONTROL CIRCUITS I High Side Switch Drivers | L T C 1 1 5 3 - Electronic Circuit Breaker w/ Program m able T rip , Re set, Current Level L T C 1 15 4 - Single N -C h F E T Sw itch D river w/ Sh ort-C irc uit Protection L T C 1 155 - Dual N -C h F E T Sw itch Drivers w / Sh ort-C ircuit Protection
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LT1312CS8
LT1313CS
LT1313
16-LEAD
340XR
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TO-238
Abstract: sn 8400
Text: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_
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1300C
IXFN100N10
O-238
O-238
TO-238
sn 8400
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74ALS11
Abstract: TC74VHC11F
Text: TO SH IBA TC74VH C11F/FN/FT T O SH IB A C M O S DIGITAL INTEG RATED CIRCUIT T C 7 4 V H C 1 1 F , TRIPLE 3 -INPUT AND T C 7 4 V H C 1 1 F N , SILICON M O N O LIT H IC T C 7 4 V H C 1 1 F T Note The JED EC SOP (FN) is not available in Japan. GATE The TC74VHC11 is an advanced high speed CMOS 3-INPUT
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TC74VHC11F/FN/FT
TC74VHC11F,
TC74VHC11
74ALS11
TC74VHC11F
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Untitled
Abstract: No abstract text available
Text: 9097250 TO SHIBA TO SH IBA T ~1 "TD T O SH IB A O I S C R E T E / O P T O J 90D D IS C R E T E/O P T O SEMICONDUCTOR iUM/dbU U U Jib4Ul DT-tf'Ql 16401 TOSHIBA GTR MODULE M G 3 0 D 2 D M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.
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125il
108B1A
MG30D2DM1
MG30D2DM1-5
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smd marking L2E
Abstract: SNJ54HC623J 54HC623
Text: REVISIONS LTR APPROVED DATE Yn-MO-OA DESCRIPTION REV SH EET REV SHEET R EV STATUS O F SH EETS REV SHEET 1 2 3 PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING C H O K E D BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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5962-8998901RX
SNJ54HC623J
5962-89989012X
SNJ54HC623FK
smd marking L2E
54HC623
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mp6801
Abstract: 3-phase motor drive
Text: MP6801 TO SH IBA TO SH IBA POW ER MOS FET M ODULE SILICON N & P CH A N N EL MOS TYPE L2- tt-M O SIV 6 IN 1 MP6801 HIGH POWER, HIGH SPEED SW ITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS 3-PHASE M OTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. • 4-Volt Gate Drive.
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MP6801
12Pin)
mp6801
3-phase motor drive
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Untitled
Abstract: No abstract text available
Text: 1SV288 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 288 Unit in mm CATV TUNING + 0.2 1.25-0.1 2-5 ±0.2 1-rl + 0.2 1 .7 -0 .1 • High Capacitance Ratio : C2V/C25V = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.)
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1SV288
C2V/C25V
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