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    SH MARKING DIODE Search Results

    SH MARKING DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    SH MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING ta y sod-323

    Abstract: 1N914BWS 1N4148WS
    Text: PRE LIM INAR Y DATA SH EET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted


    Original     		PDF 200mW OD-323 1N4148WS 1N4448WS 1N914BWS 1N4448WS, TC1N4448WS, MARKING ta y sod-323

    ERB83-004

    Abstract: diode ft 344
    Text: E R 8 B 3 - 0 0 4 1 7 A I : Outl i ne Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features • 1&VF : Marking Low V F #7-3-1' : SH Super high speed switching. • - f ls - ir - Color code : ttflil-JC S& fSSRtt w High reliability by planer design, Abridged type name


    OCR Scan     		PDF ERB83-004 diode ft 344

    smd code marking 3A sot23

    Abstract: marking SH SOT23 d96 smd SMD MARKING CODE sh SMD D62 SMD MARKING ps 6263S D96 SOT23 MO marking code sot23 da5. smd
    Text: SMD LOWCurrent Schottky Diodes SOT-23 Case NEW! TYPE NO. CONFIGURATION v nnM VOLTS MAX (mA) MAX CM PD 6263 CM PD 6263A C M PD 6263C C M PD 6263S SIN GLE DUAL, C O M M O N A NO D E DUAL, C O M M O N CATHODE DUAL, IN SE R IE S 70 70 70 70 15 15 15 15 v ,<


    OCR Scan     		PDF OT-23 6263C 6263S 1N6263 1N62C3 1N6263 smd code marking 3A sot23 marking SH SOT23 d96 smd SMD MARKING CODE sh SMD D62 SMD MARKING ps D96 SOT23 MO marking code sot23 da5. smd

    marking SH SOT23

    Abstract: smd code marking pd SMD MARKING CODE sh smd code marking LE sot23 MARKING MON sot-23 d96 smd sot 23 marking code CD MO marking code sot23 da5. smd marking pd
    Text: SMD Low Current Sdiottky Diodes SOT-23 Case NEW! T Y P E MO. CONFIGURATION V rrm VOLTS MAX >f (mA) MAX C M PD 6263 C M PD 6263A CM PD 6 26 3C CM PD 626 3S SIN G LE DUAL, C O M M O N A NO D E DUAL, C O M M O N CATHODE DUAL. IN S E R IE S 70 70 70 70 15 15


    OCR Scan     		PDF OT-23 1N6263 1N6263 marking SH SOT23 smd code marking pd SMD MARKING CODE sh smd code marking LE sot23 MARKING MON sot-23 d96 smd sot 23 marking code CD MO marking code sot23 da5. smd marking pd

    ic 4016

    Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
    Text: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August


    OCR Scan     		PDF 0005S3M MIL-S-19500/195D 1N3206 MIL-S-19500/195D, QQ0012S MIL-S-19500. MIL-S-19500 1N4373 ic 4016 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details

    1SS154

    Abstract: No abstract text available
    Text: TO SHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 U H F-S BAND M IX E R / DETECTOR APPLICATIONS U nit in mm +0.5 2.5 - 0.3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC RATING 6 UNIT V Reverse Voltage


    OCR Scan     		PDF 1SS154 SC-59 10juA 1SS154

    Untitled

    Abstract: No abstract text available
    Text: 1SS154 TO SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 • w êêf w êêf m 5 4 wm r m UHF-S BAND MIXER /DETECTOR APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS Ta =25°C SYMBOL Reverse Current Forward Voltage Ir Forward Voltage


    OCR Scan     		PDF 1SS154

    1SV237

    Abstract: No abstract text available
    Text: TOSHIBA_ 1SV237 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 237 Weight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance


    OCR Scan     		PDF 1SV237 1SV237

    1SV277

    Abstract: No abstract text available
    Text: 1SV277 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 7 7 Unit in mm VCO FOR UHF BAND RADIO • High Capacitance Ratio : C iy /C 4 Y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV277 470MHz 1SV277

    1SV305

    Abstract: No abstract text available
    Text: 1SV305 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 305 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV305 0014g 470MHz 1SV305

    1SV308

    Abstract: HP4291A
    Text: 1SV308 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 308 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = l.lO Typ. : Or = 0.3pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 1SV308 0014g HP4291A 1SV308 HP4291A

    MARKING L toshiba USC

    Abstract: 1SV304
    Text: 1SV304 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 304 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV304 470MHz MARKING L toshiba USC 1SV304

    diode bridge toshiba

    Abstract: 1SV252 aml 10 series
    Text: 1SV252 TO SH IBA 1 SV2 5 2 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm VH F-U HF BAND RF ATTENUATOR APPLICATIONS MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If


    OCR Scan     		PDF 1SV252 SC-70 100ju 300ju diode bridge toshiba 1SV252 aml 10 series

    fr2t diode

    Abstract: VRRM1000 toshiba diode do-41
    Text: TO SH IBA TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0-5A V r r m = 1000, 1500V


    OCR Scan     		PDF DO-41 000707EAA2' fr2t diode VRRM1000 toshiba diode do-41

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iy /C 4 Y = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV276 470MHz

    1SV280

    Abstract: No abstract text available
    Text: TO SH IBA 1SV280 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV280 High Capacitance Ratio : C2v /C;lov = 2.4 TYP. Low Series Resistance : rs = 0.440 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV280 0014g C2V/C10V 1SV280

    1SS364

    Abstract: marking LL
    Text: 1SS364 TO SH IBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS364 100MHz 1SS364 marking LL

    1SV285

    Abstract: No abstract text available
    Text: TO SHIBA 1SV285 1 SV2 8 5 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4Y = 2.3 TYP. • Low Series Resistance : rs = 0.420 (TYP.) • Useful for Small Size Tuner.


    OCR Scan     		PDF 1SV285 0014g 1SV285

    1SV28

    Abstract: No abstract text available
    Text: TOSHIBA 1SV285 1 SV2 8 5 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.3 TYP. • Low Series Resistance : rs = 0.420 (TYP.) • Useful for Small Size Tuner.


    OCR Scan     		PDF 1SV285 0014g 1SV28

    1SV279

    Abstract: No abstract text available
    Text: 1SV279 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 279 VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : C2v /C;lov = 2.5 TYP. Low Series Resistance : rs = 0.20 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV279 0014g 1SV279

    1SV284

    Abstract: No abstract text available
    Text: TOSHIBA 1SV284 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 4 Unit in mm VCO FOR V /U H F BAND RADIO • High Capacitance Ratio : C iy /C 4Y = 2.0 TYP. • Low Series Resistance : rs = 0.220 (TYP.) • Useful for Small Size Tuner.


    OCR Scan     		PDF 1SV284 0014g

    1SV239

    Abstract: C10V
    Text: 1SV239 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 239 VCO FOR UHF RADIO • • Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


    OCR Scan     		PDF 1SV239 1SV239 C10V

    1SS369

    Abstract: No abstract text available
    Text: TO SHIBA 1SS369 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS369 LO W VOLTAGE HIGH SPEED SWITCHING U nit in mm • Small Package • Low Forward Voltage : V f 3 —0.54V (TYP.) • Low Reverse Current : Ir = 5/¿A (MAX.) 0.8 ±0.1 1.3 ± 0.1


    OCR Scan     		PDF 1SS369 961001EAA2' 1SS369

    1SV245

    Abstract: C25V
    Text: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV245 C2V/C25V 470MHz 1SV245 C25V