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    SGS-THOMSON RF TRANSISTORS Search Results

    SGS-THOMSON RF TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SGS-THOMSON RF TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD2904

    Abstract: SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903
    Text: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &


    Original     		PDF SD2900 SD2902 SD2903 SD4013 SD1470 SD1463 AM80610-030 SD2904 SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903

    RF power transistors cross reference

    Abstract: SD1470 M176 SD2903 uhf transistors
    Text: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &


    Original     		PDF SD2900 SD2902 SD2903 SD2904 SD2921 SD2922 SD4013 SD1470 SD1463 AM80610-030 RF power transistors cross reference M176 uhf transistors

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5885 2N5886 2N5883 2N5884 2N5883/2N5884/2N5885/2N5886

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF TSD2922 TSD2922

    TSD2903

    Abstract: TSD2902 25x2mA
    Text: SGS-THOMSON sUICT»M SS TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF TSD2902 TSD2902 TSD2903 25x2mA

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON S i. M iM TSD2922 iy RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF TSD2922 TSD2922

    TSD2921

    Abstract: No abstract text available
    Text: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to


    OCR Scan     		PDF TSD2921 TSD2921

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM80912-030 AM80912-030 J133102E 00bS043

    Untitled

    Abstract: No abstract text available
    Text: / T T SGS-THOMSON ^ 7#• noM & E gM K S STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF STM901-30 STM901

    Untitled

    Abstract: No abstract text available
    Text: rs 7 SGS-THOMSON ^ 7 / M g[li]mi TO[M(gg_ SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING


    OCR Scan     		PDF SD8250 STAN250A SD8250 7T2T237

    ic 7475

    Abstract: No abstract text available
    Text: {Z ^ T SGS-THOMSON # . « @ [iL [iC T s M @ Ì_ S D 8 2 5 0 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS 7 • REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE


    OCR Scan     		PDF SD8250 ic 7475

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81035MP 81035MP MSC81035MP MSC1035MP.

    Dow Corning DC 11 compound

    Abstract: TSTM901-30 D865 M12-022
    Text: SGS-THOMSON on TSTM901 -30 RF PO W ER M O D U LE LINEAR BASE STATION A P P LIC A T IO N S PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior


    OCR Scan     		PDF TSTM901 Dow Corning DC 11 compound TSTM901-30 D865 M12-022

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON A T /. [¡¡» ilLlM M nigt_ MSC81400M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > . . . REFRACT0RYV30LD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81400M REFRACT0RYV30LD MSC81400M

    Untitled

    Abstract: No abstract text available
    Text: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET­ AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •


    OCR Scan     		PDF AM82731-025 AM82731

    Untitled

    Abstract: No abstract text available
    Text: rZ J SGS-THOMSON ^ 7 / [«»[lUglgTOMntgl_MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . EMITTER BALLASTED . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC ST RIP AC PACKAGE . Pout = 2.0 W MIN. WITH 10 dB GAIN @


    OCR Scan     		PDF MSC81002 MSC810 MSC81002 C127317

    Untitled

    Abstract: No abstract text available
    Text: C 7 SGS-THOMSON * 7 # . noæ iLl©Tf*Ri]0 gl MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > • ■ . > REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81450M MSC81450M

    TRANSISTOR 5DW

    Abstract: No abstract text available
    Text: SGS-THOMSON IU A M 0 9 1 2 -3 0 0 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAUCERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM0912-300 C125519 J1350G6F r-4050 TRANSISTOR 5DW

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON AM80610-018 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 18 W MIN. WITH 8.6 dB GAIN


    OCR Scan     		PDF AM80610-018 AM80610-018 AM80610-Q18

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON AM82731-050 1H[ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVER­ DRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM82731-050 AM82731-050

    Untitled

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON _ SD1135 RF & MICROWAVE TRANSISTORS _ UHF MOBILE APPLICATIONS • . ■ . ■ 470 MHz 12.5 VOLTS EFFICIENCY 60% COMMON EMITTER P out = 5.0 W MIN. WITH 8.5 dB GAIN -> ' f î > .280 2L STU D M122 epoxy sealed


    OCR Scan     		PDF SD1135 SD1135

    BFR92

    Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor
    Text: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR


    OCR Scan     		PDF BFR92 BFR92A BFR92A OT-23 SC06960 BFR92/BFR92A OT-23 BFR92A P1 b41 Marking BFR92A Transistor BFR92 transistor

    Untitled

    Abstract: No abstract text available
    Text: /=T SGS THOMSON ^ 7 / . H lMlLi gTMa>M(g§_ AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED a 15:1 VSWR CAPABILITY • LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY


    OCR Scan     		PDF AM1011-400 AM1011-400 J135066F

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MSC82001 lELC RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS EMITTER BALLASTED REFRACTORYyGOLD METALLIZATION VSWR CAPABILITY oo ;1 @ RATED CONDITIONS HERMETIC ST RIP AC PACKAGE P out = 1.0 W MIN. WITH 7 .0 dB GAIN @ 2 .0 GHz


    OCR Scan     		PDF MSC82001 MSC82001 J13502