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    Abstract: No abstract text available
    Text: SGNE030MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 46.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.7GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGNE030MK PDF

    SGNE030MK

    Abstract: No abstract text available
    Text: SGNE030MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 46.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.7GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGNE030MK SGNE030MK PDF