Untitled
Abstract: No abstract text available
Text: SGNE010MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 40.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=3.5GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGNE010MK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGNE010MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 40.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=3.5GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGNE010MK
|
PDF
|