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    Text: SGN21C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain :17dB(typ.) @ f=2.1GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


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    PDF SGN21C105MK 25deg JESD22-A114) JEIA/ESD22-A115)