Nuvoton 885
Abstract: Nuvoton 795 w83627uhg watchdog dc-dc led driver INTEL 845 MOTHERBOARD CIRCUIT diagram W83627UHG temperature rating schematic diagram intel W83627DHG 1121 diode LED LG GP 836 DIODE Winbond W83627DHG
Text: W83627UHG NUVOTON LPC I/O Date: September 17, 2008 Revision: 1.44 -I- Publication Release Date: March 24, 2008 Revision 1.44 TABLE OF CONTENTS – 1. 2. 3. 4. 5. GENERAL DESCRIPTION . 1
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W83627UHG
W83627UHG
Nuvoton 885
Nuvoton 795
w83627uhg watchdog
dc-dc led driver
INTEL 845 MOTHERBOARD CIRCUIT diagram
W83627UHG temperature rating
schematic diagram intel W83627DHG
1121 diode LED LG
GP 836 DIODE
Winbond W83627DHG
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w83977eg
Abstract: w83977ef-aw W83977EG-AW 16450 UART 13SP O16u
Text: W83977EF-AW /W83977EG-AW NUVOTON ISA I/O W83977EF-AW W83977EG-AW -I - Publication Release Date: January, 2010 Revision 1.5 W83977EF-AW /W83977EG-AW TABLES OF CONTENTS 1. GENERAL DESCRIPTION .1
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W83977EF-AW
/W83977EG-AW
W83977EG-AW
w83977eg
W83977EG-AW
16450 UART
13SP
O16u
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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CREC 3.579545 MHz
Abstract: floppy disk interface PC87911 PC97 FDC87W22 FDC97W33X DB25 CONNECTOR CR25 PHOENIX amikey
Text: FDC97W33x Integrated I/O Controller with Wakeup Features FEATURES • • • • • • • • • • 5 Volt Operation Plug & Play 1.0A Compliant Supports 13 IRQs, 4 DMA Channels, Full 16 Bit Addresses Decoding Capable of ISA Bus IRQ Sharing PC 98/99 and ACPI 1.0 Compliant
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FDC97W33x
FDC97W33x
CREC 3.579545 MHz
floppy disk interface
PC87911
PC97
FDC87W22
DB25 CONNECTOR
CR25 PHOENIX
amikey
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amikey-2
Abstract: amikey MOA2 W83627HF/F W83627HF-AW phoenix multikey
Text:
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50308-2E
MB84VD22280FA-70/MB84VD22290FA-70
MB84VD22280FE-70/MB84VD22290FE-70
59-ball
MB84VD22280FA/80FE/90FA/90FE
F0311
4kw marking
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1GP10
Abstract: joystick PS2 MOA2 MOB2 ISO7816 PC99 RECS-80 W83627SF Winbond LPC 1GP20
Text: W83627SF W83627SF WINBOND I/O -1- Publication Release Date: May 31, 2005 Revision A1 W83627SF Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 7
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W83627SF
1GP10
joystick PS2
MOA2
MOB2
ISO7816
PC99
RECS-80
W83627SF
Winbond LPC
1GP20
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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DS05-20904-2E
MBM29DL32TF/BF-70
MBM29DL32TF/BF
MBM29DL32TF/BF
F0305
FPT-48P-M19
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SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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SA70
Abstract: 18FFFFH
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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DS05-50204-2E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
SA70
18FFFFH
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MAX232 G4
Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
Text: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9
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MPC555
TP102
TP103
CB100
TP100
TP101
CO101
MAX232-6
MAX232-2
MAX232-13
MAX232 G4
IC404
IC808
ic401
diode C728
diode c729
transistor C721
IC818
ic811
C729
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Untitled
Abstract: No abstract text available
Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION
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IS71VPCF32XS04
73-ball
CF32ES04-8570BI
IS71VPCF32FS04-8570BI
IS71VPCF32AS04-8585BI
IS71VPCF32BS04-8585BI
IS71VPCF32CS04-8585BI
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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SA70
Abstract: 22a17
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50207-4E
MB84VD2228XEA/EE-85
MB84VD2229XEA/EE-85
71-ball
SA70
22a17
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MARKING SA70
Abstract: MBM29DL324
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0306
MARKING SA70
MBM29DL324
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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DS05-20892-1E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
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29DL32BF
Abstract: MBM29DL32
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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MBM29DL32TF/BF
MBM29DL32TF/BF
29DL32BF
MBM29DL32
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M1528
Abstract: MC-222253AF9-B85X-BT3 MC-222253A-X NEC MCP SRAM FLASH
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-222253A-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 32M-BIT FLASH MEMORY AND 4M-BIT SRAM Description The MC-222253A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words
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MC-222253A-X
32M-BIT
MC-222253A-X
77-pin
M1528
MC-222253AF9-B85X-BT3
NEC MCP SRAM FLASH
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M1531
Abstract: MC-222244AF9-B85X-BT3 MC-222244A-X
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-222244A-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 32M-BIT FLASH MEMORY AND 4M-BIT SRAM Description The MC-222244A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words
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MC-222244A-X
32M-BIT
MC-222244A-X
77-pin
M1531
MC-222244AF9-B85X-BT3
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A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
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4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0307
4kw marking
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MARKING HRA
Abstract: 4kw marking MARKING SA70
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.8E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
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MB84VD22180FA-70/MB84VD22190FA-70
MB84VD22180FM-70/MB84VD22190FM-70
59-ball
84VD22180FA/VD22190FA/VD22180FM/VD22190FM
MARKING HRA
4kw marking
MARKING SA70
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FPT-48P-M19
Abstract: MBM29PL65LM-90 Diode SA91
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM-90/10 • DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.
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DS05-20903-1E
MBM29PL65LM-90/10
MBM29PL65LM
48-pin
MBM29PL65for
F0312
FPT-48P-M19
MBM29PL65LM-90
Diode SA91
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83977ATF
Abstract: winbond msl 83977TF marking rld bh sot 223 st ae gp 446
Text: W83977ATF WINBOND I/O W83977ATF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 08/25/97 0.50 First published. 2 53,54,58,63,64,65, 69,138.1,139 11/17/97 0.51 Register correction 3 1,2,3,20,45,53,63, 65,99,103,150 04/01/98
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W83977ATF
8S6-3S-770066
83977ATF
winbond msl
83977TF
marking rld bh sot 223
st ae gp 446
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