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    Ecliptek Corporation E1SGA18-25.000M-TR

    CRYSTAL 25.0000MHZ 18PF SMD
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    DigiKey E1SGA18-25.000M-TR Cut Tape 900 1
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    E1SGA18-25.000M-TR Reel 1,000
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    Mean Well SGA18U09-P1J

    AC/DC WALL MOUNT ADAPTER 9V 18W
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    Mean Well SGA18U05-P1J

    AC/DC WALL MOUNT ADAPTER 5V 15W
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    DigiKey SGA18U05-P1J Box 44 1
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    Mean Well SGA18E05-P1J

    AC/DC WALL MOUNT ADAPTER 5V 15W
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    DigiKey SGA18E05-P1J Box 36 1
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    Verical SGA18E05-P1J 20 4
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    Mean Well SGA18E12-P1J

    AC/DC WALL MOUNT ADAPTER 12V 18W
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    Verical SGA18E12-P1J 49 5
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    SGA18E12-P1J 20 4
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    TME SGA18E12-P1J 49 1
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    SGA18 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGA18E09-P1J MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - AC/DC WALL MOUNT ADAPTER 9V 18W Original PDF

    SGA18 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original
    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


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    DS05-50308-2E MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FA/80FE/90FA/90FE F0311 4kw marking PDF

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19 PDF

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


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    DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31 PDF

    SA70

    Abstract: 18FFFFH
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V


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    DS05-50204-2E MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 73-ball MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 SA70 18FFFFH PDF

    MAX232 G4

    Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
    Text: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9


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    MPC555 TP102 TP103 CB100 TP100 TP101 CO101 MAX232-6 MAX232-2 MAX232-13 MAX232 G4 IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION


    Original
    IS71VPCF32XS04 73-ball CF32ES04-8570BI IS71VPCF32FS04-8570BI IS71VPCF32AS04-8585BI IS71VPCF32BS04-8585BI IS71VPCF32CS04-8585BI PDF

    BGA-101P-M01

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM


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    DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01 PDF

    SA70

    Abstract: 22a17
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V


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    DS05-50207-4E MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 71-ball SA70 22a17 PDF

    Untitled

    Abstract: No abstract text available
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original
    F0305 PDF

    MARKING SA70

    Abstract: MBM29DL324
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original
    F0306 MARKING SA70 MBM29DL324 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original
    DS05-20892-1E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball MBM29PDD322TE/BE PDF

    29DL32BF

    Abstract: MBM29DL32
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    MBM29DL32TF/BF MBM29DL32TF/BF 29DL32BF MBM29DL32 PDF

    M1528

    Abstract: MC-222253AF9-B85X-BT3 MC-222253A-X NEC MCP SRAM FLASH
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-222253A-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 32M-BIT FLASH MEMORY AND 4M-BIT SRAM Description The MC-222253A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words


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    MC-222253A-X 32M-BIT MC-222253A-X 77-pin M1528 MC-222253AF9-B85X-BT3 NEC MCP SRAM FLASH PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    4kw marking

    Abstract: No abstract text available
    Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original
    F0307 4kw marking PDF

    MARKING HRA

    Abstract: 4kw marking MARKING SA70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.8E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


    Original
    MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 59-ball 84VD22180FA/VD22190FA/VD22180FM/VD22190FM MARKING HRA 4kw marking MARKING SA70 PDF

    FPT-48P-M19

    Abstract: MBM29PL65LM-90 Diode SA91
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM-90/10 • DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.


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    DS05-20903-1E MBM29PL65LM-90/10 MBM29PL65LM 48-pin MBM29PL65for F0312 FPT-48P-M19 MBM29PL65LM-90 Diode SA91 PDF

    32 KB SRAM

    Abstract: DS05-50208-1E SWITCH SA125
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash


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    DS05-50208-1E MB84LD23381EJ-10 101-ball MB84VD23381EJ-90 32 KB SRAM DS05-50208-1E SWITCH SA125 PDF

    4kw marking

    Abstract: MBM29DL640E
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance


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    DS05-50211-2E MB84VD23280EA-90/MB84VD23280EE-90 101-ball 4kw marking MBM29DL640E PDF

    32 KB SRAM

    Abstract: MBM29DL640E
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash


    Original
    DS05-50209-2E MB84VD23381EJ-90 32 KB SRAM MBM29DL640E PDF

    DS05-20905-1E

    Abstract: BGA-48P-M13 FPT-48P-M19 MBM29DL64DF MBM29DL64DF-70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be


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    DS05-20905-1E MBM29DL64DF-70 MBM29DL64DF 48-pin 48-ball F0303 DS05-20905-1E BGA-48P-M13 FPT-48P-M19 MBM29DL64DF-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


    Original
    MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE -90/12 • GENERAL DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and


    Original
    DS05-20882-1E MBM29LV650UE/651UE 64M-bit, D-63303 F9912 PDF