Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O S H IB A TECHNICAL SG600GXH26 DATA LOW SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATIO N Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG600GXH26
SG600GXH26)
--24V,
--600A,
500mA
SG600GXH26-
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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SG600GXH26
SG800W24
SG1000GXH26
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2000GXH26
SG2200GXH24
SG2500EX24
snubber diode
SG2500GX
gto sg3000gxh24
SG3000GXH24
free diode
1000GXHH22
800EXH21
SG3000GXH
100GXHH21
SG4000GXH26G
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Untitled
Abstract: No abstract text available
Text: T O S H IB A G A T E TU R N -O FF T H Y R IST O R SG 6 0 0 G X H 2 6 L O W S N U B B E R TY PE SG600GXH26 SG600GXH26 INVERTER APPLICATION Unit in mm • Repetitive Peak Off-State Voltage Vd RM = 4500V • R.M.S On-State Current lT(RMS) = 300A • Peak Turn-Off Current
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SG600GXH26
SG600GXH26)
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SG600GXH26
Abstract: ls025 SG-60 CS-05
Text: T O S H IB A SG600GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LO W SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage
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SG600GXH26
VD-2250V
Tj-125Â
SG600GXH26
ls025
SG-60
CS-05
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100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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SG2500EX24
SG3000EX24
SG4000EX26
SG2000R24
SG2000U24
SG2000W24
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
100EXG11
500EXH21
200FXG12
200FXH12
800GXHH21
gto 200A
100exh
gto 300A
100GXHH21
4500v
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SG600GXH26
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG600GXH26 DATA LOW SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG600GXH26
SG600GXH26)
SG600GXH26
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOW SN UB B ERTYPE SG600GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: V DRM = 4 5 0 0 V • R.M.S. O n-State Current: h RMS = • Peak Turn-Off Current: 't g q m = 6 0 0 A • Critical Rate of Rise of O n-State Current:
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SG600GXH26
00A/JIS
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SG600GXH26
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG600GXH26 DATA LOW SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG600GXH26
SG600GXH26)
SG600GXH26
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