diode MARKING CODE sg
Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"
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RB520S-30
OD-523
OD-523
diode MARKING CODE sg
marking code SG
diode sg 03
sg diode code marking
MARKING CODE sg 06
SG DIODE
RB520S-30
MARKING SG
diode marking sg
code sg
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marking sg
Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Text: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·
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OD-323
SD107WS
OD-323
3000ms.
019REF
475REF
marking sg
diode SOD-323
SD107WS
SG DIODE MARKING
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications
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OD-323
SD107WS
OD-323
3000ms.
019REF
475REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications
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OD-323
SD107WS
OD-323
100mA
3000ms.
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
OD-323
SD107WS
100mA
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SMD MARKING CODE sg
Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Text: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top
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SB520WT
OD-523
OD-523
SMD MARKING CODE sg
diode MARKING CODE sg
smd diode marking sG
MARKING CODE sg 06
diode sg 01
diode smd marking code SG
SG DIODE MARKING
diode smd code SG
sg smd code
smd "code rc" transistor
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SG DIODE
Abstract: diode sg-64 diode sg 71
Text: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1
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W83773G/SG
W83773G
W83773SG
SG DIODE
diode sg-64
diode sg 71
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BAR19
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: /= T SG S-TH O M SO N BAT 41 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges.
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Untitled
Abstract: No abstract text available
Text: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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300ns
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220v 25a diode bridge
Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Text: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A
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10/700MS
TSI62B5
TSI120B5
TSI150B5
TSI180B5
TSI200B5
TSI270B5
TSI62
TSI120
TSI150
220v 25a diode bridge
220v 5a diode bridge
TSI270B5
sgs marking code
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ByV schottky
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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BYV10-20A
ByV schottky
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220v 25a diode bridge
Abstract: No abstract text available
Text: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5
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Schaffner IU 1237
Abstract: Schaffner 1237 NSG506C 7R2R23
Text: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS
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LDP24M
-SAEJ1113A.
S0-10TM
Schaffner IU 1237
Schaffner 1237
NSG506C
7R2R23
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away
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SG40TC10M
Abstract: schottky diode marking A7 marking c1j c1j marking
Text: Schottky Barrier Diode mtm OUTLINE Twin Diode SG 40TC 1OM 100 V 40 A Feature • Tj=175°C • Full Molded • Tj=175°C • IS I r =60|j A • • L o w Ir = 6 0 | j A • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ
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SG40TC1OM
FTO-220G
50Hzr
CJ533-1
SG40TC10M
schottky diode marking A7
marking c1j
c1j marking
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Diode MARKING S37
Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Text: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS
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LDP24AS
Diode MARKING S37
transient voltage suppressor diode
LDP24AS
DTR7637
DIODE MARKING CODE 623
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away
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20TC1OM
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FTO-220G
Abstract: J533 J533-1
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA
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SG40TC12M
120V40A
60ljA
FTO-220G
J533-1
FTO-220G
J533
J533-1
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diode sg 52
Abstract: mosfet 1200V 25A MOROCCO B 108 B
Text: £ y j SG S-TH O M SO N TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V (typ) 60ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN
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73b21
Abstract: No abstract text available
Text: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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T0220AC
STTB806D
STTB806DI
73b21
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diode sg 46
Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Text: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS
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STTA512D
ISOWATT220AC
STTA512F
diode sg 46
SG DIODE MARKING
diode sg 52
IGBT 2000V .50A
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marking AGs sot-23
Abstract: No abstract text available
Text: LNE150 &à Supertex inc. Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N BVoos (max) 500V 1.0KQ Order Number / Package If BVDSS/ Product marking forTO-236AB: TO-236AB* Die NEE* LNE150K1 LNE150ND where * = 2-week alpha date code
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LNE150
O-236AB*
LNE150K1
LNE150ND
forTO-236AB:
OT-23.
500nA
100S2,
7732RS
G0042S2
marking AGs sot-23
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Untitled
Abstract: No abstract text available
Text: r s T ^7 S G S - T H O M S O N # ffifli g®@[iiL[i(Sir®@oaD(gi R C D 1 6 -4 7 B R-C-D TERMINATOR NETWORKS FEATURES O Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot. □ Monolithic device for greater reliability.
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RCD16-47B
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