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    SG DIODE CODE MARKING Search Results

    SG DIODE CODE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SG DIODE CODE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode MARKING CODE sg

    Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
    Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"


    Original     		PDF RB520S-30 OD-523 OD-523 diode MARKING CODE sg marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg

    SG DIODE

    Abstract: diode sg-64 diode sg 71
    Text: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1


    Original     		PDF W83773G/SG W83773G W83773SG SG DIODE diode sg-64 diode sg 71

    teledyne relay 412 screening

    Abstract: TELEDYNE RELAYS DATE CODE teledyne diode Teledyne Relays 412 marking code 351 diode TELEDYNE 412
    Text: TELEDYNE RELAYS Page 1 of 40 DETAIL SPECIFICATION FOR HIREL 412 RELAYS RELAYS, HIGH RELIABILITY, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION TR-HIREL-1/412


    Original     		PDF TR-HIREL-1/412 teledyne relay 412 screening TELEDYNE RELAYS DATE CODE teledyne diode Teledyne Relays 412 marking code 351 diode TELEDYNE 412

    TELEDYNE RELAYS DATE CODE

    Abstract: No abstract text available
    Text: TELEDYNE RELAYS Page 1 of 43 Feb 21, 2006 11:30 am DETAIL SPECIFICATION FOR HIREL 412V RELAYS RELAYS, HIGH RELIABILITY, HIGH VIBRATION, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND


    Original     		PDF TR-HIREL-1/412V TELEDYNE RELAYS DATE CODE

    marking code SG transistors

    Abstract: LNE150 LNE150K1 LNE150ND diode MARKING CODE sg
    Text: – – E T E LNE150 OBSOL Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code


    Original     		PDF LNE150 O-236AB: O-236AB* LNE150K1 LNE150ND OT-23. marking code SG transistors LNE150 LNE150K1 LNE150ND diode MARKING CODE sg

    LNE150

    Abstract: LNE150K1 LNE150ND
    Text: LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code


    Original     		PDF LNE150 O-236AB: O-236AB* LNE150K1 LNE150ND OT-23. LNE150 LNE150K1 LNE150ND

    8.22 diode marking code

    Abstract: mos n-channel SOT-23 LNE150 LNE150K1 LNE150ND diode code 10 marking code SG transistors
    Text: LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code


    Original     		PDF LNE150 O-236AB: O-236AB* LNE150K1 LNE150ND OT-23. 8.22 diode marking code mos n-channel SOT-23 LNE150 LNE150K1 LNE150ND diode code 10 marking code SG transistors

    SMD MARKING CODE sg

    Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
    Text: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top


    Original     		PDF SB520WT OD-523 OD-523 SMD MARKING CODE sg diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor

    RB520S-30

    Abstract: diode MARKING CODE sg diode sg 5 ts
    Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode


    Original     		PDF RB520S-30 OD-523 160Hz OD-523 RB520S-30 diode MARKING CODE sg diode sg 5 ts

    diode sg 5 ts

    Abstract: diode MARKING CODE sg diode sg 12 SG DIODE MARKING RB520S-30 diode sg 01 diode sg 03
    Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode


    Original     		PDF RB520S-30 OD-523 160Hz OD-523 diode sg 5 ts diode MARKING CODE sg diode sg 12 SG DIODE MARKING RB520S-30 diode sg 01 diode sg 03

    sg 421

    Abstract: MBRF20150CT MBRF20100CT CODE DIODE diode MARKING A1 MBRF20200CT TO-220FP MBRF20200CT diode MARKING CODE sg
    Text: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device


    Original     		PDF O-220FP 20xxxCT MIL-STD-750, DB-100 sg 421 MBRF20150CT MBRF20100CT CODE DIODE diode MARKING A1 MBRF20200CT TO-220FP MBRF20200CT diode MARKING CODE sg

    Untitled

    Abstract: No abstract text available
    Text: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device


    Original     		PDF O-220FP 20xxxCT MIL-STD-750, DB-100

    MBRF20100ct

    Abstract: MBRF20200CT MBRF20150CT
    Text: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device


    Original     		PDF MIL-STD-750, O-220FP 20xxxCT DB-100 MBRF20100ct MBRF20200CT MBRF20150CT

    Untitled

    Abstract: No abstract text available
    Text: SGM2021 Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2021 series low-power, low-noise, low-dropout, y Low Output Noise CMOS linear voltage regulators operate from a 2.5V to y Low Dropout Voltage 5.5V input voltage. They are the perfect choice for low


    Original     		PDF SGM2021 SGM2021 300mA

    diode MARKING CODE sg

    Abstract: SD107WS-7 SD107WS J-STD-020A MARKING SG marking code SG code sg
    Text: SD107WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOD-323 Mechanical Data · · · · · · · Case: SOD-323, Plastic


    Original     		PDF SD107WS OD-323 OD-323, J-STD-020A MIL-STD-202, SD107WS-7 3000/Tape com/datasheets/ap02007 DS30129 diode MARKING CODE sg SD107WS-7 SD107WS J-STD-020A MARKING SG marking code SG code sg

    diode MARKING CODE sg

    Abstract: code sg sg diode code marking SG DIODE MARKING
    Text: SD107WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOD-323 Mechanical Data · · · · · · · Case: SOD-323, Plastic


    Original     		PDF SD107WS OD-323 OD-323, J-STD-020A MIL-STD-202, SD107WS-7 3000/Tape com/datasheets/ap02007 DS30129 diode MARKING CODE sg code sg sg diode code marking SG DIODE MARKING

    marking AGs sot-23

    Abstract: No abstract text available
    Text: LNE150 &à Supertex inc. Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N BVoos (max) 500V 1.0KQ Order Number / Package If BVDSS/ Product marking forTO-236AB: TO-236AB* Die NEE* LNE150K1 LNE150ND where * = 2-week alpha date code


    OCR Scan     		PDF LNE150 O-236AB* LNE150K1 LNE150ND forTO-236AB: OT-23. 500nA 100S2, 7732RS G0042S2 marking AGs sot-23

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* Die NEE* 500V 1.0K& 3.0mA LNE150K1 LNE150ND where * = 2-week alpha date code


    OCR Scan     		PDF LNE150 O-236AB: O-236AB* LNE150K1 LNE150ND 500nA

    supertex dmos

    Abstract: No abstract text available
    Text: Supertexinc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N Order Number / Package ' d (ON) BVDOs (max) (min) TO-236AB* 500V 1.0K£1 3.0mA LNE150K1 Product marking for TO-236AB: Die NEE* LNE150ND where * = 2-week alpha date code


    OCR Scan     		PDF LNE150 O-236AB* LNE150K1 LNE150ND O-236AB: OT-23. 300ns supertex dmos

    DA108S1

    Abstract: No abstract text available
    Text: SGS-IHOMSON •Hiera «! Application Specific Discretes A.S.D. DA108S1 DA112S1 D IO D E A R R A Y APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning. FUNCTIONAL DIAGRAM : DA108S1 FEATURES


    OCR Scan     		PDF DA108S1 DA112S1 IEC1000-4-22 DA108S1

    diode marking code 7-7-7-7

    Abstract: LCP15XX device marking sgl
    Text: SGS-IHOMSON LCP150S •m Application Specific Discretes A.S.D. PROGRAM M ABLE TRANSIENT VOLTAGE SUPPRESSO R FOR SLIC PROTECTION FEATURES ■ DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR ■ HIGH SURGE CURRENT CAPABILITY. - Ip p = 50A, 10/1000 |J,S. - Ip p = 60 A, 5/310 OS.


    OCR Scan     		PDF LCP150S diode marking code 7-7-7-7 LCP15XX device marking sgl

    Untitled

    Abstract: No abstract text available
    Text: S G S -ÏH O M S O N KÆOœ@[EL[iûre *i SMLVT3V3 LOW VOLTAGE TRANSIL FEATURES . • ■ ■ ■ ■ UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 600 W 10/1 OOO^s REVERSE STAND-OFF VOLTAGE = 3.3 V LOW CLAMPING FACTOR FAST RESPONSETIME UL RECOGNIZED


    OCR Scan     		PDF DO-214AA)

    THDT58D

    Abstract: breakover device diode sg 38 diode MARKING CODE sg thDT
    Text: Si 30 E » H 7 ^ 2 3 7 0G 32 G 24 S• SGS-THOMSON ¡ÛLUgim«! SG S -T H O M S O N THDT 58 D TRISIL DESC RIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, It enables to protect integrated SLIC against


    OCR Scan     		PDF D89THDT58DP4 THDT58D breakover device diode sg 38 diode MARKING CODE sg thDT

    Untitled

    Abstract: No abstract text available
    Text: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION


    OCR Scan     		PDF ADB18PS ADB18PS