e10.7a
Abstract: sfe 5.5 murata E10.7F sfe10.7mhy E10.7A ceramic SFE10.7MA19 E10,7A SFE10.7MFP SFE10 SFE10.7MA21
Text: CERAMIC FILTERS LOW LOSS, WIDE OR NARROW BAND, MINIATURE SFE MA/MTE/MVE/MFP 10.7MHz The following filters were developed to offer both narrower and wider bandwidth characteristics for use in products such as DBS receivers. These filters also retain the same reliability
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SFE10
7MA19
7MA20-A
7MA21
e10.7a
sfe 5.5 murata
E10.7F
sfe10.7mhy
E10.7A ceramic
SFE10.7MA19
E10,7A
SFE10.7MFP
SFE10.7MA21
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e10.7a
Abstract: E10.7F SFE10,7A murata SFE10.7MA21 -E107-T
Text: PIEZO FILTERS CERAMIC FILTERS LOW LOSS, WIDE OR NARROW BAND, MINIATURE SFE MA/MTE/MVE/MFP 10.7MHz The following filters were developed to offer both narrower and wider bandwidth characteristics for use in products such as DBS receivers. These filters also retain the same reliability
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SFE10
7MA19
7MA20-A
7MA21
e10.7a
E10.7F
SFE10,7A
murata SFE10.7MA21
-E107-T
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e10.7a
Abstract: SFE10 MURATA sfe 5.5 MHZ E10,7A murata sfe10.7ma20-a E10.7A ceramic E107a SFE 10.7 MX SFE10.7MA21 SFE10.7MT
Text: PIEZO FILTERS CERAMIC FILTERS LOW LOSS, WIDE OR NARROW BAND, MINIATURE SFE MA/MTE/MVE/MFP 10.7MHz The following filters were developed to offer both narrower and wider bandwidth characteristics for use in products such as DBS receivers. These filters also retain the same reliability
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SFE10
7MA19
7MA20-A
7MA21
7MA19
e10.7a
MURATA sfe 5.5 MHZ
E10,7A
murata sfe10.7ma20-a
E10.7A ceramic
E107a
SFE 10.7 MX
SFE10.7MA21
SFE10.7MT
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LT 6742
Abstract: MURATA SFE MHZ sfe 5.5 murata murata sfe sfe 4.5 murata sfe murata murata sft ceramic filter murata filter murata ceramic filter sfe 5.5 SFE
Text: Ceramic Filters - Token Passive Components Taiwan CERAMIC FILTERS FOR TV/VCR STAGE CERAMIC FILTERS HIGH-SELECTIVITY CERAMIC FILTER FOR TV/VCR STAGE Ceramic Filter - High-Selectivity LTT High-Selectivity is 4 element devices that offer more selectivity than the conventional LT series Murata SFE . The
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e10.7a
Abstract: E10.7A ceramic SFE10 sfe 5.5 murata murata sfe10.7ma20-a E10,7A SFE 10.7 MX SFE10.7mt sfe 5.5 SFE -E107-T
Text: PIEZO FILTERS CERAMIC FILTERS LOW LOSS, WIDE OR NARROW BAND, MINIATURE SFE MA/MTE/MVE/MFP 10.7MHz The following filters were developed to offer both narrower and wider bandwidth characteristics for use in products such as DBS receivers. These filters also retain the same reliability
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SFE10
7MA19
7MA20-A
7MA21
7MA19
e10.7a
E10.7A ceramic
sfe 5.5 murata
murata sfe10.7ma20-a
E10,7A
SFE 10.7 MX
SFE10.7mt
sfe 5.5 SFE
-E107-T
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sfe 5.5 MB ceramic filter
Abstract: SFE 5.5 ceramic filter sfe 6,5 mb sfe 5,5 mb murata sfe sfe 5.5 murata SFE10M7 Murata SFE 4.7 Mb SFE 5.5 Mb sfe 4.5 murata
Text: TOKEN LT MB Ceramic Filters for TV/VCR Stage Ceramic Filters for TV/VCR Stage Ceramic Filters for TV/VCR Stage Murata SFE MB Compatible 4.5 MHz ~ 6.5 MHz Preview Token utilizes the latest piezo filter technology enabling the most cost-effective designs in manufacturing LT
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Untitled
Abstract: No abstract text available
Text: Technical Specifications 102 Series Fischer Connectors SA Saint-Prex, Switzerland Phone +41 21 800 95 95 Fax +41 21 800 39 24 www.fischerconnectors.com mail@fischerconnectors.ch Multipole Low Voltage Product range covered: S / SC / SA / SV / SOV / SS / SSC / WSO / SF / SFE / SFU / SFPE / SFPU / D / DB / DBP / DBPC / DG / DGP
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sfe 5.5
Abstract: No abstract text available
Text: SFE, SFR Polystyrene EVOX SFE, SFR Construction Polystyrene c a p ac ito r w ith radial leads • 1 Polystyrene film with metal foil elec trodes and radial tinned wires. Wound to a compact cylindrical form. SFE is coated with an epoxy resin for ex tended operating temperature range.
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cq24-000
Abstract: Q24060 98l18
Text: Sfe- -<•' m2 DEVICE SPECIFICATION SERIES BiCMOS LOGIC ARRAYS Q24000 DESCRIPTION The AMCC Q24000 Series of BiCMOS logic arrays is comprised of six products with densities ranging from 720 to 13440 equivalent gates including a structured array with a high performance Phase-Locked Loop*.
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Q24000
Q24000
A7D1320-0892
755-AMCC
cq24-000
Q24060
98l18
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Untitled
Abstract: No abstract text available
Text: SSI 32F8144 ¿mmsvskms Programmable Electronic Filter A TDK G roup/C om pany January 1994 DESCRIPTION FEATURES This custom integrated circuit incorporates a pulse equalizer of variable equalization and variable band w idth w ith a tran sfe r function of a 2 zero/7 pole linear
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32F8144
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Untitled
Abstract: No abstract text available
Text: 10 | 3 | 2 | 1 i±se NOTES 1. m MATERIAL F (PA) . # y * m . S&.UL9LV-0 HOUSING : POLYAMIDE , GLASS FILLED, WHITE, UL9LV-D 7?f 7i-FV^)U7 7 l'(PPS), #7 •*:£*. Sfe • UL9LV-0 ACTUATOR : POLYPHENYLENE SULFIDE , GLASS FILLED, BROWN, UL94V-0 9- ?±)U : Uvfffld = 0.2 )
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UL94V-0
SD-527Z6-032
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Untitled
Abstract: No abstract text available
Text: UCC1888 UCC2888 UCC3888 y UNITRODE Off-line Power Supply Controller W ide 10OVDC to 400VD C Allow able Input Range Fixed 5VD C o r A djustable Low Voltage O utput O utput Sinks 200m A, Sources 150m A Into a M O SFE T G ate Uses Low C ost SM D Inductors Short C ircuit Protected
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UCC1888
UCC2888
UCC3888
10OVDC
400VD
UCC3888
NE-10
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UFN533
Abstract: C1B4 FN531
Text: TH UNITRODE CORP 9347963 UNITRODE CORP 920 10708 D?^T347Tk3 Df- J 0Q1070& □ / POW ER M O SFE T T R A N S IS T O R S ufn53i UFN532 UFN533 100 Volt, 0.18 Ohm N-Channel FEATURES DESCRIPTION • • • • • « The Unitrode power M O S F E T d esign utilizes the m ost a dvanced technology available.
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T347Tk3
0Q1070&
ufn53i
UFN532
UFN533
UFN533
C1B4
FN531
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Untitled
Abstract: No abstract text available
Text: A • R W .\A A P T 1 0 M 11 B 2 V R dvanced pow er Te c h n o lo g y " ioov 100a 0.01 i q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,
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O-247
APT10M1B2VR
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2SK2528-01
Abstract: SC-65 fus20
Text: S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P o w e r M O SFE T 2 S K 2 5 2 8 - Q 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D AT E NAME APPROVED Fiiji Electric Co^lid DRAWN CHECKED o' z o 3: o
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2SK2528-01
0257-R-004a
0257-R-003a
2SK2528-01
SC-65
fus20
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apt50m85jvr
Abstract: No abstract text available
Text: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT50M85JVR
OT-227
APT50M85JVR
E145592
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Untitled
Abstract: No abstract text available
Text: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT501OJ
soov44a
OT-227
APT5010JVR
E145592
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TI OAE
Abstract: No abstract text available
Text: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT40M35JVR 400v 93a 0.035Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT40M35JVR
OT-227
APT40M35JVR
E145592
TI OAE
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Untitled
Abstract: No abstract text available
Text: • R A dvanced r M po w er Tec h n o lo g y APT20M22JVR 200V 97A 0.022Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT20M22JVR
OT-227
E145592
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SK 8051 S
Abstract: uPD75X sk 8051
Text: S-24S30R/I 8-word x8 -b it Serial NON-VOLATILE RAM T he S-24S30R/I is a non-volatile CM OS RAM, c o m p o s e d of a CM OS static RAM and a non-volatile e lectrica lly erasable program m able m em ory E2PROM to backup the SRAM . The organization is 8-w ord x 8bit (total 64 bits) and data can be tra n sfe rre d serially by
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S-24S30R/I
S-24S30R/I
80perature
D0D1610
SK 8051 S
uPD75X
sk 8051
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Untitled
Abstract: No abstract text available
Text: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT5020BVR
O-247
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Untitled
Abstract: No abstract text available
Text: APT30M19JVR A dvanced W /Æ P O W E R Te c h n o lo g y ' • R 300V 0.01 9q 130a POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT30M19JVR
OT-227
APT30M19JVR
E145592
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2SK49
Abstract: transistor 2sk49 reciver circuit for radio transistor KIN NEC CIR TC306 radio reciver
Text: N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR D E S C R IP T IO N T he 2S K 49 is designed fo r use in FM tu n e r o f a po ta b le R A D IO P A C K A G E D IM E N S IO N S R E C IV E R . in m illim eters inches FEATURES • High F orw a rd T ra n sfe r A d m itta n c e .
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2SK49
2SK49
J22686
TC-3063A
transistor 2sk49
reciver circuit for radio
transistor KIN
NEC CIR
TC306
radio reciver
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Untitled
Abstract: No abstract text available
Text: SO NY ICX059ALB 1/3 inch CCD Image Sensor for CCIR B/W Camera D escription T he IC X 059 A L B is an interline tra n sfe r C C D solid-state im ag e s e n s o r s u ita b le fo r C C IR B /W v id e o c a m e ra s . H igh se n sitiv e n e s s and low dark c u rre n t are a ch ie ved
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ICX059ALB
1/50s
1/100s
1/10000s
0D0L721
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