Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is
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12-stacked
12stacked
Modeling of SOI FET for RF Switch Applications
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Untitled
Abstract: No abstract text available
Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of
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Choosing the Right RF Switches for Smart Mobile Device Applications
Abstract: No abstract text available
Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than
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rf mems switch spst
Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Text: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.
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AN-952,
com/090917cs
rf mems switch spst
SKY13317-373
Hittite RF Switch SOI
military switch
EDN handbook
rf3024
SKY13317-373LF
RF3023
RF3025
2SMES-01
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Optimized CMOS-SOI Process for High Performance RF Switches
Abstract: No abstract text available
Text: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in
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Abstract: No abstract text available
Text: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna
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BRO378-12B
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stacked transistor shunt switch
Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Text: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor
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Abstract: No abstract text available
Text: CXA4420GC SP5T+ SP5T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4420GC Description CXA4420GC is the SP5T+SP5T antenna diversity switch for WCDMA/3G/LTE applications. CXA4420GC has a 1.8 V CMOS compatible decoder with Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.
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Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM
Abstract: TPC2A Alcatel-Lucent
Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes
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Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
Abstract: 180NM IBM
Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE
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11b/g
Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
180NM IBM
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PE42480
Abstract: No abstract text available
Text: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding
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DOC-35227-4
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stacked transistor shunt switch
Abstract: RF 107 CMOS Stacked RF M21 mosfet matrix m21 SPDT stacked FET r01n Peregrine MRF MOSFET
Text: CMOS SOS SWITCHES DESIGN CMOS SOS Switches Offer Useful Features, High Integration Understanding the basic theory and characteristics underlying CMOS SOS switch technology opens the door to numerous RF and microwave applications. s witching RF and microwave signals is a fundamental function in all radio applications. Accordingly, there are a great
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TAG 302-600
Abstract: PE42924
Text: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)
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RFFM8502
Abstract: bidirectional wifi amplifier
Text: RFFM8502 4.9GHZ to 5.85GHZ 802.11a/n/ac WiFi Front End Module Package: QFN, 16-pin, 2.5mmx2.5mmx0.45mm Features POUT = 17.5dBm, 11a, OFDM at 2.5% EVM Voltage Range 3.0V to 4.8V Input and Output Matched to 50 Integrated 5GHz PA, SP2T,
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RFFM8502
85GHZ
11a/n/ac
16-pin,
RFFM8502
DS121010
bidirectional wifi amplifier
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car ecu wiring system service manual
Abstract: LEARN ELECTRONIC ECU CAR BLOCK books on car immobilizer and references basics of wiring harness ATA5780 cars ecu immobilizer DETAILS of RFID use automatic vehicle parking system Generation of ASK,FSK,PSK ecu immo eeprom car Speed Sensor using RFID
Text: Automotive Compilation Volume 7 December 2010 Contents Table of Contents Configurable RF Architecture Gives Engineers Greater Design Flexibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Design and Security Considerations for Passive Immobilizer Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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MAX3934
Abstract: MAX3952 MAX4281 898 resistor network
Text: 19-2605; Rev 0; 10/02 10.7Gbps Compact Laser Diode Driver The MAX3934 is a compact +5V or -5.2V laser driver designed to directly modulate a laser diode at data rates up to 10.7Gbps. The driver provides externally programmable laser biasing and modulation currents.
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898 resistor network
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MAX3934
Abstract: MAX3952 MAX4281 1031G of 828 Transistor
Text: 19-2605; Rev 0; 10/02 10.7Gbps Compact Laser Diode Driver The MAX3934 is a compact +5V or -5.2V laser driver designed to directly modulate a laser diode at data rates up to 10.7Gbps. The driver provides externally programmable laser biasing and modulation currents.
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MAX4281
1031G
of 828 Transistor
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PE97
Abstract: No abstract text available
Text: Product Specification PE97022 3500 MHz UltraCMOS Integer-N PLL Rad Hard for Space Applications Product Description Peregrine’s PE97022 is a high-performance integer-N PLL capable of frequency synthesis up to 3500 MHz. The device is designed for superior phase noise performance
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PE97022
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PE97
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4312 UltraCMOS RF Digital Step Attenuator 6-bit, 31.5 dB, 1 MHz – 4 GHz Product Description The PE4312 is a 50Ω, HaRP technology-enhanced 6-bit RF Digital Step Attenuator DSA designed for use in 3G/4G wireless infrastructure and other high performance
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PE4302
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R2J240
Abstract: R2J24020F 61048fp R2J24010F R2S20020 M37512 61048FP laptop battery 3 cells diagram schematic m37512 M37512 r2j24010 R2J24020
Text: 2008.12 Renesas General-Purpose Linear ICs General Catalog Power Management Linear ICs/Standard Linear ICs www.renesas.com Renesas linear IC devices bring the concepts of “indispensable” and “used everywhere” to a new level. AC/DC Power Management Linear ICs
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REJ01D0001-0400
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R2J24020F
61048fp
R2J24010F
R2S20020
M37512 61048FP
laptop battery 3 cells diagram schematic m37512
M37512
r2j24010
R2J24020
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4cx250
Abstract: 741p TRANSISTOR GUIDE RSGB EHT COIL transformer amplifier 4cx250b qro linear for two metres precision rectifier using 741 4cx250b 1N414S
Text: Power supply and control circuits for a 4CX250B amplifier by A. J. WADE, BSc, G4AJW* M ANY amateurs are now using tetrodes of the 4CX250B family in their power amplifiers, and while such amplifiers usually present little difficulty from the rf point of view—there being several well-proved designs in the litera
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4CX250B
4cx250
741p
TRANSISTOR GUIDE
RSGB
EHT COIL transformer
amplifier 4cx250b
qro linear for two metres
precision rectifier using 741
1N414S
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DAT-3175-SP
Abstract: 14001 schematic diagram
Text: Digital Step Attenuator 75Q DC-2000 MHz 31 dB, 1 dB Step 5 Bit, Serial Control Interface, Single Positive Supply Voltage, +3V Product Features • Single positive supply voltage, +3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control interface
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DC-2000
DAT-3175-SP+
DAT-3175-SP
2002/95/EC)
TB-344
Page2of12
DAT-3175-SP
14001 schematic diagram
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Untitled
Abstract: No abstract text available
Text: CA3256 HARRIS S E M I C O N D U C T O R 25M Hz, BiM O S Analog Video Switch and A m plifier November 1996 Features Description • 5 M u ltip le x V id e o C h an n els The CA3256 BiMOS analog video switch has five channels of CMOS multiplex switching for general-purpose video
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CA3256
CA3256
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Untitled
Abstract: No abstract text available
Text: HARRIS H S E M I C O N D U C T O R 1 5 7 3 1 12-Bit, 100 MSPS, High Speed D/A Converter August 1997 Description Features Throughput R a te . 100 MSPS Low P o w e r.
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12-Bit,
650mW
HI5731
HBC-10)
HSP45102
HI5731
HSP45102
12-BIT
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