DS22239A
Abstract: 24LCS21A oxygen sensor using PIC TS19649 AC243003 AN1147 verilog model 23X256 Microchip Serial SRAM AN1147 dspic33 example codes i2c
Text: Serial Memory Products Serial Memory Products • Serial EEPROM ■ Serial SRAM www.microchip.com/memory Serial Memory Products A broad portfolio of high performance, best-in-class Serial Memory Products to meet all your design requirements. Microchip offers the broadest range of Serial EEPROM devices from 128 bits to 1 Mbit over the widest operating
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DS22239A
DS22239A*
DS22239A
24LCS21A
oxygen sensor using PIC
TS19649
AC243003
AN1147 verilog model
23X256
Microchip Serial SRAM
AN1147
dspic33 example codes i2c
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DC VCC RESET RESET WP SCL GND SDA
Abstract: No abstract text available
Text: TECHNICAL NOTE Plug & Play Memory series 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module BR34L02-W ͶDESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM based on Serial Presence Detect for DRAM Memory Module ͶFEATURES 256͙8 bit architecture serial EEPROM
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BR34L02-W
BR34L02-W
16byte)
00h7Fh
00hFFh
DC VCC RESET RESET WP SCL GND SDA
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BR34L02
Abstract: BR34L02FV-W BR34L02-W
Text: TECHNICAL NOTE Plug & Play Memory series 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module BR34L02-W ●DESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM based on Serial Presence Detect for DRAM Memory Module ●FEATURES 256x8 bit architecture serial EEPROM
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BR34L02-W
BR34L02-W
16byte)
00h7Fh
00hFFh
BR34L02
BR34L02FV-W
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BR34E02-W
Abstract: 256X8 BR34E02 BR34E02FVT-W VSON008X2030
Text: TECHNICAL NOTE Double-cell Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM
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BR34E02-W
BR34E02FVT-W
16byte)
00h-7Fh
00h-FFh
BR34E02-W
256X8
BR34E02
VSON008X2030
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W, BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM
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BR34E02FVT-W,
BR34E02NUX-W
BR34E02FVT-W
16byte)
00h-7Fh
00h-FFh
R0039A
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W, BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM
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BR34E02FVT-W,
BR34E02NUX-W
BR34E02FVT-W
16byte)
00h-7Fh
00h-FFh
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Untitled
Abstract: No abstract text available
Text: Memory for Plug & Play DDR2/DDR3 SPD Memory for Memory Modules BR34E02FVT-3,BR34E02NUX-3 No.11002EAT05 ●Description BR34E02-3 Series is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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BR34E02FVT-3
BR34E02NUX-3
BR34E02-3
16byte)
00h-7Fh
00h-FFh
R1120A
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Untitled
Abstract: No abstract text available
Text: Double-cell Memory for Plug & Play DDR1/DDR2 For memory module SPD Memory BR34L02FV-W No.09002EAT04 ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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BR34L02FV-W
09002EAT04
BR34L02FV-W
16byte)
00h-7Fh
00h-FFh
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Untitled
Abstract: No abstract text available
Text: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory No.09002EBT03 BR34E02FVT-W,BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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09002EBT03
BR34E02FVT-W
BR34E02NUX-W
16byte)
00h-7Fh
00h-FFh
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Untitled
Abstract: No abstract text available
Text: Double-cell Memory for Plug & Play DDR1/DDR2 For memory module SPD Memory BR34L02FV-W No.09002EAT04 ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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BR34L02FV-W
BR34L02FV-W
16byte)
00h-7Fh
00h-FFh
R0039A
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BR34L02FV-W
Abstract: No abstract text available
Text: Double-cell Memory for Plug & Play DDR1/DDR2 For memory module SPD Memory BR34L02FV-W No.09002EAT04 ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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BR34L02FV-W
09002EAT04
BR34L02FV-W
16byte)
00h-7Fh
00h-FFh
R0039A
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VSON008X2030
Abstract: 256X8 BR34E02 BR34E02FVT-W BR34E02-W
Text: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W,BR34E02NUX-W No.09002EBT03 ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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BR34E02FVT-W
BR34E02NUX-W
09002EBT03
16byte)
00h-7Fh
00h-FFh
R0039A
VSON008X2030
256X8
BR34E02
BR34E02-W
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256X8
Abstract: BR34E02 BR34E02FVT-W BR34E02-W VSON008X2030 00H-7FH
Text: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W, BR34E02NUX-W No.09002EAT03 ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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BR34E02FVT-W,
BR34E02NUX-W
09002EAT03
BR34E02FVT-W
16byte)
00h-7Fh
00h-FFh
R0039A
256X8
BR34E02
BR34E02-W
VSON008X2030
00H-7FH
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Untitled
Abstract: No abstract text available
Text: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory No.09002EBT03 BR34E02FVT-W,BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM
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BR34E02FVT-W
BR34E02NUX-W
16byte)
00h-7Fh
00h-FFh
R0039A
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Double-cell Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02-W ͶDescription BR34E02FVT-W is 256͙8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ͶFeatures ・256͙8 bit architecture serial EEPROM ・Wide operating voltage range: 1.7V-3.6V
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BR34E02-W
BR34E02FVT-W
16byte)
00h-7Fh
00h-7Fh
00h-FFh
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Double-cell Memory for Plug & Play DDR1 For memory module SPD Memory BR34L02FV-W ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1. 256×8 bit architecture serial EEPROM 2. Wide operating voltage range: 1.7V-5.5V
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BR34L02FV-W
BR34L02FV-W
16byte)
00h-7Fh
00h-FFh
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JESD21-C
Abstract: JESD-21C DDR3 DIMM SPD JEDEC DDR3 sodimm pcb layout micron DDR3 SODIMM address mapping edge connector DDR3 pcb layout sodimm ddr3 connector PCB footprint micron ddr3 MICRON DDR3 SODIMM pcb footprint DDR3 layout
Text: TN-04-42: Memory Module Serial Presence-Detect Introduction Technical Note Memory Module Serial Presence-Detect Introduction This technical note describes how SPD is essential in helping to standardize the configuration, timing, and manufacturing information of any given memory module. SPD information is written to a single EEPROM that resides on the DIMM. The pins of the
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TN-04-42:
09005aef807d571e/Source:
09005aef8357e79a
JESD21-C
JESD-21C
DDR3 DIMM SPD JEDEC
DDR3 sodimm pcb layout
micron DDR3 SODIMM address mapping edge connector
DDR3 pcb layout
sodimm ddr3 connector PCB footprint
micron ddr3
MICRON DDR3 SODIMM pcb footprint
DDR3 layout
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Untitled
Abstract: No abstract text available
Text: HYMD512726B P 8J-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4
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HYMD512726B
8J-D43/J
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Untitled
Abstract: No abstract text available
Text: HYMD232726D P 8J-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4
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HYMD232726D
8J-D43/J
column70
B27592
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HYMD564G726CF
Abstract: No abstract text available
Text: HYMD564G726CF P 8N-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Number of Bytes written into serial memory at module manufacturer Total Number of Bytes in SPD device 1 Fundmetal Memory Type 2 Number of Row addresses on this assembly 3
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HYMD564G726CF
8N-D43/J
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Untitled
Abstract: No abstract text available
Text: HYMD264726D P 8J-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4
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HYMD264726D
8J-D43/J
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HYMD232646D
Abstract: 070d
Text: HYMD232646D P 8J-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4
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HYMD232646D
8J-D43/J
B27592
070d
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HYMD512726C
Abstract: No abstract text available
Text: HYMD512726C P 8J-D43/J SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4
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HYMD512726C
8J-D43/J
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TM Serial Presence Detect SPD CMOS EEPROM_ The Serial Presence Detect is 2048 bits of CMOS non-volatile electrically erasable memory. It is designed to support serial pres ence detect circuitry in memory modules. The contents of the non
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