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    AN200806

    Abstract: CGR18650A CGR18650AF CGR18650 anr26650 CGR18650*af ultracapacitor A123 Systems 20Ah maxwell supercapacitor A123 ANR26650
    Text: T: 450 585-6396 www.sysacom.com AN200806-01A Comparing energy density of some capacitors, ultracapacitors and batteries. By Denis Lachapelle eng. and Serge Garcia June 2008 Introduction This application note compares energy density of various energy storage components such as


    Original     		PDF AN200806-01A AN200806 CGR18650A CGR18650AF CGR18650 anr26650 CGR18650*af ultracapacitor A123 Systems 20Ah maxwell supercapacitor A123 ANR26650

    znr 470

    Abstract: ZNR 470 D 10 znr 270
    Text: “ZNR” Transient/Surge Absorbers Type SC “ZNR” Transient/Surge Absorbers Type: SC The ZNR Type SC protects power supply facilities, communications equipment from steep lightning surges, and it is a suitable product to incorporate it in a serge protective device corresponding to the Japanese


    Original     		PDF ZVS34C621 ERZVS34C511 ERZVS34C471 ERZVS34C951 ERZVS34C821 ERZVS34C751 ERZVS34C621 ERZVS34C431 znr 470 ZNR 470 D 10 znr 270

    znr 470

    Abstract: ZNR 470 D 10 znr varistor varistor znr znr varistor 240 ERZ-VS34C201 53811
    Text: “ZNR” Transient/Surge Absorbers Type SC “ZNR” Transient/Surge Absorbers Type: SC The ZNR Type SC protects power supply facilities, communications equipment from steep lightning surges, and it is a suitable product to incorporate it in a serge protective device corresponding to the Japanese


    Original     		PDF RoHRZVS34C471 ERZVS34C431 ERZVS34C361 ERZVS34C271 ERZVS34C241 ERZVS34C201 ERZVS34C951 ERZVS34C821 ERZVS34C751 ERZVS34C621 znr 470 ZNR 470 D 10 znr varistor varistor znr znr varistor 240 ERZ-VS34C201 53811

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    vienna rectifier

    Abstract: three phase bridge rectifier picture 10kw pfc ABB Semiconductors SCR three phase three level active front end rectifier SCR 30A 400V Motor Control Center wiring diagram abb 3.5kw pfc A Novel Three-Phase Three-Switch Three-Level PWM 2.4 kW dc to ac induction motor controller invert
    Text: 35 kW Active Rectifier with Integrated Power Modules Peter Wiedemuth, HÜTTINGER Elektronik GmbH + Co. KG, Germany Serge Bontemps, Microsemi PPG power module Products, France Johann Miniböck, m-pec, Austria and ETH Zurich, power electronic systems laboratory, Switzerland


    Original     		PDF

    amplitude modulation applications

    Abstract: LDMOS AN1223
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 amplitude modulation applications LDMOS AN1223

    Varistor

    Abstract: Serge high voltage varistor
    Text: Features Featuresand andStructures Structuresof ofchip chiptype typemultilayer multilayerceramic ceramicvaristors varistors ●Multilayered ceramic composed mostly of Zinc chloride（ chloride（ZnO . ZnO). ●HighlyHighly-reliability with large serge capacitance


    Original     		PDF

    NM6403

    Abstract: No abstract text available
    Text: Image Processing SPECIAL FEATURE Implementing image compression algorithms on NeuroMatrix architecture: New approaches By Sergey Mushkaev and Sergey Landyshev This article discusses the possibilities the NM6403 processor opens up for static image compression.The authors present the Discrete Cosine Transform DCT algorithm


    Original     		PDF NM6403

    10Gb CDR

    Abstract: BA rx transistor INF8077i Xlaui IC 555 architecture lc oscillator led based graphic equalizer ic P802 CEI-11G 11GSR
    Text: Emerging Standards at ~10 Gbps for Wireline Communications and Associated Integrated Circuit Design and Validation An Invited Paper for CICC Mike Peng Li and Sergey Shumarayev Altera Corporation 101 Innovation Road San Jose, CA 95134 Abstract-We first review the signaling and jitter requirements


    Original     		PDF 40-nm 10Gb CDR BA rx transistor INF8077i Xlaui IC 555 architecture lc oscillator led based graphic equalizer ic P802 CEI-11G 11GSR

    bang bang phase detector

    Abstract: tsmc cmos 90nm "toan nguyen" PRBS23 90 nm CMOS CP-01032-1 0MV2
    Text: Receiver Offset Cancellation in 90-nm PLD Integrated SERDES Simar Maangat, Toan Nguyen, Wilson Wong, Sergey Shumarayev, Tina Tran, Tim Hoang, Richard Cliff Altera Corporation, 101 Innovation Drive San Jose, CA 95134 USA Abstract– A wide-range transceiver was designed and fabricated


    Original     		PDF 90-nm 90-nm bang bang phase detector tsmc cmos 90nm "toan nguyen" PRBS23 90 nm CMOS CP-01032-1 0MV2

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz

    mosfet high power rf ldmos

    Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 mosfet high power rf ldmos Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB

    so8 ceramic

    Abstract: AN1233 M243 M250 so8 Wire bond
    Text: AN1233 APPLICATION NOTE LDMOS PACKAGES Serge Juhel 1. ABSTRACT LDMOS technology recently implemented at ST is an important step forwards, combining technological and environmental progress. In the basic LDMOS structure figure 1 , a p-epitaxial layer is grown on an


    Original     		PDF AN1233 so8 ceramic AN1233 M243 M250 so8 Wire bond

    0.18-um CMOS technology characteristics

    Abstract: 10Gb CDR card fci 0.18-um CMOS technology characteristics 1.2V
    Text: DesignCon 2007 Digitally Assisted Adaptive Equalizer in 90 nm With Wide Range Support From 2.5 Gbps to 6.5 Gbps Now available in Stratix II GX FPGAs: www.altera.com/technology/adce Wilson Wong, Altera Corporation Tin Lai, Altera Corporation Sergey Shumarayev, Altera Corporation


    Original     		PDF CP-01026-1 0.18-um CMOS technology characteristics 10Gb CDR card fci 0.18-um CMOS technology characteristics 1.2V

    vienna rectifier

    Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
    Text: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac


    Original     		PDF F-33700 CH-8092 APEC2007) vienna rectifier Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier

    AN1683

    Abstract: LMH7324
    Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1683 Gerrit Sergers 2007౎9ሆ ߁ຎ !!!!ॽԲডഗBࢅC‫ڦ‬ଇ߲Q๼‫؜‬৊ႜई֡ፕ‫شڟڥ‬੨ॠ !!!!ย ऺ ޿ ‫ ۉ‬ୟ ӱ ణ ‫ ڦ‬๟ ᄇ ๖ ‫ ټ‬R S P E C L ๼ ‫ڦ ؜‬ ֪ഗ‫ڦ‬๼‫؜‬ă ӝECL ݀พट᳘ࢇஇड ঳ࠓ‫ڦ‬๼‫૶؜‬ሞ


    Original     		PDF LMH7324 200mV AN-1683 AN1683 LMH7324

    Untitled

    Abstract: No abstract text available
    Text: Anti-Serge Thick Film Chip Resistors Anti-Serge Thick Film Chip Resistors 1206 Type: ERJP08 • Features ● Characteristic:Better the Anti-Serge characteristic than the metal film resistor ● High reliability Metal glaze thick film resistive element and three layers of electrodes result in high reliability


    Original     		PDF ERJP08 QS-9000

    PCIM

    Abstract: Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switchi trench TEOS oxide layer PCIM 177 Si4390DY Si4392DY Si7390DP Si7392DP trench ultra low power mosfet fast switching
    Text: Presented at PCIM Europe 2003 International Conference and Exhibition, May 20-22, Nuremberg, Germany Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switching Performance. Jess Brown, Serge Jaunay and Mohamed Darwish


    Original     		PDF

    APT0405

    Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
    Text: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.


    Original     		PDF APT0405 APT0405 TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG

    inductor vk200

    Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier

    Signal Path Designer

    Abstract: No abstract text available
    Text: DesignCon 2010 Offset Cancellation in Receiver Path in 45-nm 6.5-Gbps Transceiver FPGAs Tina Tran, Altera Corporation Email: ttran@altera.com Doris Chan, Altera Corporation Email: dchan@altera.com Sergey Shumarayev, Altera Corporation Email: sshumara@altera.com


    Original     		PDF 45-nm CP-01063-1 Signal Path Designer

    D4364c-15L

    Abstract: NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15
    Text: Technical Report UCAM-CL-TR-536 ISSN 1476-2986 Number 536 Computer Laboratory Low temperature data remanence in static RAM Sergei Skorobogatov June 2002 15 JJ Thomson Avenue Cambridge CB3 0FD United Kingdom phone +44 1223 763500 http://www.cl.cam.ac.uk/ c 2002 Sergei Skorobogatov


    Original     		PDF UCAM-CL-TR-536 sps32 D4364c-15L NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15

    Untitled

    Abstract: No abstract text available
    Text: “ZNR” Transient/Surge Absorbers Type SC “ZNR” Transient/Surge Absorbers Type: SC The ZNR Type SC protects power supply facilities, communications equipment from steep lightning surges, and it is a suitable product to incorporate it in a serge protective device corresponding to the Japanese


    Original     		PDF ZVS34C751 ERZVS34C621 ERZVS34C511 ERZVS34C471 ERZVS34C951 ERZVS34C821 ERZVS34C751 ERZVS34C471

    pll 02 a

    Abstract: 800E-02 finite state machine frequency detection using FPGA
    Text: DesignCon 2009 Method and Apparatus of Continuous PLL Adaptation to Variable Reference Input Frequency Tim Hoang, Altera Corporation Sergey Shumarayev, Altera Corporation Kazi Asaduzzaman, Altera Corporation Leon Zheng, Altera Corporation CP-01051-1.0 February 2009


    Original     		PDF CP-01051-1 pll 02 a 800E-02 finite state machine frequency detection using FPGA