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    SENSITIVE GATE SILICON CONTROLLED RECTIFIER Search Results

    SENSITIVE GATE SILICON CONTROLLED RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SENSITIVE GATE SILICON CONTROLLED RECTIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sensitive Gate

    Abstract: No abstract text available
    Text: భ఼ਘ! Sensitive Gate Silicon Controlled Rectifiers Sensitive Gate Silicon Controlled Rectifiers 可控硅 FH08E DESCRIPTION & FEATURES 概述及特點 Sensitive Gate Trigger Current靈敏門極觸發電流 Blocking Voltage to 600V 耐壓電壓達600V


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    PDF OT-223 FH08E OT-223 Sensitive Gate

    c106d

    Abstract: C106M C106D to-126 C106d silicon controlled rectifier c106b C106-D Sensitive Gate Silicon Controlled Rectifier to126 case C106M to-126 c106d to-220
    Text: Central C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging


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    PDF C106B C106D C106M O-126 27-April C106D to-126 C106d silicon controlled rectifier C106-D Sensitive Gate Silicon Controlled Rectifier to126 case C106M to-126 c106d to-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS  DESCRIPTION The UTC MCK100 is a sensitive gate silicon controlled rectifiers reverse blocking thyristor. It provides the customers with high surge


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    PDF MCK100 MCK100 QW-R601-041

    NTE5402

    Abstract: NTE5401 NTE5405 NTE5404 NTE5406 NTE5400 NTE5403
    Text: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with


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    PDF NTE5400 NTE5406 NTE5406 NTE5402 NTE5401 NTE5405 NTE5404 NTE5403

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ SCR 1 SOT-89 DESCRIPTION The UTC MCK100 is a sensitive gate silicon controlled rectifiers reverse blocking thyristor. It provides the customers with high surge


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    PDF MCK100 OT-89 MCK100 QW-R601-041

    NTE5402

    Abstract: NTE5405 NTE5404 NTE5401 thyristor SCR 600V 8A NTE5406 NTE5400 To92 thyristor datasheet NTE5403
    Text: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR−thyristor) rated at 0.8 amps RMS maximum on−state current, with


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    PDF NTE5400 NTE5406 NTE5406 NTE5402 NTE5405 NTE5404 NTE5401 thyristor SCR 600V 8A To92 thyristor datasheet NTE5403

    MRC22-8

    Abstract: MRC22-6
    Text: DATA SHEET MCR22-6 MCR22-8 SENSITIVE GATE SILICON CONTROLLED RECTIFIER TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MCR22 series types are PNPN Sensitive Gate Silicon Controlled Rectifiers manufactured in a TO-92 case, designed for CD ignition, fuel igniters, flash circuits, and motor control applications.


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    PDF MCR22-6 MCR22-8 MCR22 200mA, MRC22-8 MRC22-6

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET C106B THRU C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200V to 600V JEDEC TO-126 CASE DESCRIPTION The Central Semiconductor C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature,


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    PDF C106B C106M O-126 O-126

    C106B2

    Abstract: C106D2
    Text: C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V


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    PDF C106B2 C106D2 C106M2 O-202-2 23-April

    C106B2

    Abstract: TO202-2 C106D2
    Text: C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 Series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V


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    PDF C106B2 C106D2 C106M2 O-202-2 15-February TO202-2

    NTE5426

    Abstract: 1A 400v scr to220
    Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is


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    PDF NTE5426 NTE5426 150mA 1A 400v scr to220

    NTE5426

    Abstract: 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate
    Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is


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    PDF NTE5426 NTE5426 150mA 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate

    Thyristors

    Abstract: MCR100L MCR100L-6 mcr100l-8 mcr100-6 sot-23 mcr100g sot89 scr mcr100-6 sot23 SCR 10A MCR100-6 SCR 400 V 0,8 A
    Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V


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    PDF MCR100 OT-89 OT-23 QW-R301-016 Thyristors MCR100L MCR100L-6 mcr100l-8 mcr100-6 sot-23 mcr100g sot89 scr mcr100-6 sot23 SCR 10A MCR100-6 SCR 400 V 0,8 A

    silicon-controlled rectifier

    Abstract: BT258S-800LT
    Text: BT258S-800LT SCR logic level, high temperature Rev. 01 — 2 September 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier in a SOT428 surface-mounted plastic package 1.2 Features • Very sensitive gate


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    PDF BT258S-800LT OT428 BT258S-800LT silicon-controlled rectifier

    mcr100-6 sot-23

    Abstract: mcr100-6 sot mcr100-6 sot23 mcr100l-6 MCR100L MCR100-6 SCR 400 V 0,8 A MCR100-8 MCR100-8 SOT89 MCR100-6 circuit MCR100-6 AE3
    Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V


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    PDF MCR100 OT-89 OT-23 QW-R301-016 mcr100-6 sot-23 mcr100-6 sot mcr100-6 sot23 mcr100l-6 MCR100L MCR100-6 SCR 400 V 0,8 A MCR100-8 MCR100-8 SOT89 MCR100-6 circuit MCR100-6 AE3

    hsc106

    Abstract: No abstract text available
    Text: = 400 V Sensitive Gate Silicon Controlled Rectifier IT RMS = 4.0A FEATURES Symbol ‰ ‰ ‰ ‰ 2.Anode 3.Gate Repetitive Peak Off-State Voltage (VRM= 400V) R.M.S On-state Current (IT(RMS)=4.0A) Average On-state Current (IT(AV)=2.55A) Sensitive Gate Triggering (0.2mAMax@25℃)


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    PDF HSC106D O-126) hsc106

    Untitled

    Abstract: No abstract text available
    Text: NYC0102BLT1G Preferred Device Product Preview Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly-sensitive triggering in low-power switching applications. Features http://onsemi.com 0.25 AMP, 200 VOLT SCRs


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    PDF NYC0102BLT1G OT-23 NYC0102BL/D

    MML1225

    Abstract: MXL1225
    Text: DC COMPONENTS CO., LTD. MML1225 MXL1225 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices.


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    PDF MML1225 MXL1225 OT-89 67VDRM, 125oC MML1225 MXL1225

    XL1225

    Abstract: XL1225 TO-92 XL1225 equivalent ML1225 XL1225 transistor AC 050
    Text: DC COMPONENTS CO., LTD. ML1225 XL1225 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices.


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    PDF ML1225 XL1225 022IH 67VDRM, 125oC XL1225 XL1225 TO-92 XL1225 equivalent ML1225 XL1225 transistor AC 050

    NTE5457

    Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


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    PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5456 NTE5453 NTE5454 NTE5455 SCR NTE5457

    NTE5457

    Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


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    PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 SCR NTE5457 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive

    BT169H

    Abstract: SC-43A
    Text: TO - 92 BT169H SCR Rev. 2 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 T0-92 plastic package. 1.2 Features and benefits „ High voltage capability „ Sensitive gate


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    PDF BT169H T0-92) BT169H SC-43A

    C106M

    Abstract: C106D C106B C106D to-126 C106d silicon controlled rectifier Silicon Controlled Rectifiers
    Text: Central" C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging


    OCR Scan
    PDF C106B C106D C106M 27-April O-126 O-126 C106D to-126 C106d silicon controlled rectifier Silicon Controlled Rectifiers

    mcr22

    Abstract: mcr22-8 mcr226
    Text: Central MCR22-6 MCR22-8 Semiconductor Corp. SENSITIVE GATE SILICON CONTROLLED RECTIFIER 1.5 AMP, 400 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR22-6 and MCR22-8 are PNPN Sensitive Gate Silicon Controlled Rectifiers manufactured in a TO-92 case, and designed for CD ignition, fuel igniters,


    OCR Scan
    PDF MCR22-6 MCR22-8 200mA, 18-June mcr22 mcr226