Sensitive Gate
Abstract: No abstract text available
Text: భ఼ਘ! Sensitive Gate Silicon Controlled Rectifiers Sensitive Gate Silicon Controlled Rectifiers 可控硅 FH08E DESCRIPTION & FEATURES 概述及特點 Sensitive Gate Trigger Current靈敏門極觸發電流 Blocking Voltage to 600V 耐壓電壓達600V
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OT-223
FH08E
OT-223
Sensitive Gate
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c106d
Abstract: C106M C106D to-126 C106d silicon controlled rectifier c106b C106-D Sensitive Gate Silicon Controlled Rectifier to126 case C106M to-126 c106d to-220
Text: Central C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging
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C106B
C106D
C106M
O-126
27-April
C106D to-126
C106d silicon controlled rectifier
C106-D
Sensitive Gate Silicon Controlled Rectifier
to126 case
C106M to-126
c106d to-220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS DESCRIPTION The UTC MCK100 is a sensitive gate silicon controlled rectifiers reverse blocking thyristor. It provides the customers with high surge
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MCK100
MCK100
QW-R601-041
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NTE5402
Abstract: NTE5401 NTE5405 NTE5404 NTE5406 NTE5400 NTE5403
Text: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with
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NTE5400
NTE5406
NTE5406
NTE5402
NTE5401
NTE5405
NTE5404
NTE5403
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS SCR 1 SOT-89 DESCRIPTION The UTC MCK100 is a sensitive gate silicon controlled rectifiers reverse blocking thyristor. It provides the customers with high surge
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MCK100
OT-89
MCK100
QW-R601-041
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NTE5402
Abstract: NTE5405 NTE5404 NTE5401 thyristor SCR 600V 8A NTE5406 NTE5400 To92 thyristor datasheet NTE5403
Text: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR−thyristor) rated at 0.8 amps RMS maximum on−state current, with
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NTE5400
NTE5406
NTE5406
NTE5402
NTE5405
NTE5404
NTE5401
thyristor SCR 600V 8A
To92 thyristor datasheet
NTE5403
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MRC22-8
Abstract: MRC22-6
Text: DATA SHEET MCR22-6 MCR22-8 SENSITIVE GATE SILICON CONTROLLED RECTIFIER TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MCR22 series types are PNPN Sensitive Gate Silicon Controlled Rectifiers manufactured in a TO-92 case, designed for CD ignition, fuel igniters, flash circuits, and motor control applications.
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MCR22-6
MCR22-8
MCR22
200mA,
MRC22-8
MRC22-6
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Untitled
Abstract: No abstract text available
Text: DATA SHEET C106B THRU C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200V to 600V JEDEC TO-126 CASE DESCRIPTION The Central Semiconductor C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature,
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C106B
C106M
O-126
O-126
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C106B2
Abstract: C106D2
Text: C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V
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C106B2
C106D2
C106M2
O-202-2
23-April
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C106B2
Abstract: TO202-2 C106D2
Text: C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 Series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V
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C106B2
C106D2
C106M2
O-202-2
15-February
TO202-2
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NTE5426
Abstract: 1A 400v scr to220
Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is
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NTE5426
NTE5426
150mA
1A 400v scr to220
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NTE5426
Abstract: 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate
Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is
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NTE5426
NTE5426
150mA
1A 400v scr to220
SCR TRIGGER PULSE circuit
"Silicon Controlled Rectifier"
scr 250 amps
SCR RECTIFIER
SCR sensitive gate
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Thyristors
Abstract: MCR100L MCR100L-6 mcr100l-8 mcr100-6 sot-23 mcr100g sot89 scr mcr100-6 sot23 SCR 10A MCR100-6 SCR 400 V 0,8 A
Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V
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MCR100
OT-89
OT-23
QW-R301-016
Thyristors
MCR100L
MCR100L-6
mcr100l-8
mcr100-6 sot-23
mcr100g
sot89 scr
mcr100-6 sot23
SCR 10A
MCR100-6 SCR 400 V 0,8 A
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silicon-controlled rectifier
Abstract: BT258S-800LT
Text: BT258S-800LT SCR logic level, high temperature Rev. 01 — 2 September 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier in a SOT428 surface-mounted plastic package 1.2 Features • Very sensitive gate
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BT258S-800LT
OT428
BT258S-800LT
silicon-controlled rectifier
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mcr100-6 sot-23
Abstract: mcr100-6 sot mcr100-6 sot23 mcr100l-6 MCR100L MCR100-6 SCR 400 V 0,8 A MCR100-8 MCR100-8 SOT89 MCR100-6 circuit MCR100-6 AE3
Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V
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MCR100
OT-89
OT-23
QW-R301-016
mcr100-6 sot-23
mcr100-6 sot
mcr100-6 sot23
mcr100l-6
MCR100L
MCR100-6 SCR 400 V 0,8 A
MCR100-8
MCR100-8 SOT89
MCR100-6 circuit
MCR100-6 AE3
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hsc106
Abstract: No abstract text available
Text: = 400 V Sensitive Gate Silicon Controlled Rectifier IT RMS = 4.0A FEATURES Symbol 2.Anode 3.Gate Repetitive Peak Off-State Voltage (VRM= 400V) R.M.S On-state Current (IT(RMS)=4.0A) Average On-state Current (IT(AV)=2.55A) Sensitive Gate Triggering (0.2mAMax@25℃)
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HSC106D
O-126)
hsc106
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Untitled
Abstract: No abstract text available
Text: NYC0102BLT1G Preferred Device Product Preview Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly-sensitive triggering in low-power switching applications. Features http://onsemi.com 0.25 AMP, 200 VOLT SCRs
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NYC0102BLT1G
OT-23
NYC0102BL/D
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MML1225
Abstract: MXL1225
Text: DC COMPONENTS CO., LTD. MML1225 MXL1225 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices.
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MML1225
MXL1225
OT-89
67VDRM,
125oC
MML1225
MXL1225
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XL1225
Abstract: XL1225 TO-92 XL1225 equivalent ML1225 XL1225 transistor AC 050
Text: DC COMPONENTS CO., LTD. ML1225 XL1225 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices.
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ML1225
XL1225
022IH
67VDRM,
125oC
XL1225
XL1225 TO-92
XL1225 equivalent
ML1225
XL1225 transistor
AC 050
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NTE5457
Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be
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NTE5452
NTE5458
NTE5458
NTE5452
NTE5453
NTE5457
NTE5456
NTE5453
NTE5454
NTE5455
SCR NTE5457
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NTE5457
Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be
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NTE5452
NTE5458
NTE5458
NTE5452
NTE5453
NTE5457
NTE5455
NTE5456
SCR NTE5457
scr 5 amp
NTE5454
SCR TRIGGER PULSE circuit
SCR Gate Drive
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BT169H
Abstract: SC-43A
Text: TO - 92 BT169H SCR Rev. 2 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 T0-92 plastic package. 1.2 Features and benefits High voltage capability Sensitive gate
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BT169H
T0-92)
BT169H
SC-43A
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C106M
Abstract: C106D C106B C106D to-126 C106d silicon controlled rectifier Silicon Controlled Rectifiers
Text: Central" C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging
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C106B
C106D
C106M
27-April
O-126
O-126
C106D to-126
C106d silicon controlled rectifier
Silicon Controlled Rectifiers
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mcr22
Abstract: mcr22-8 mcr226
Text: Central MCR22-6 MCR22-8 Semiconductor Corp. SENSITIVE GATE SILICON CONTROLLED RECTIFIER 1.5 AMP, 400 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR22-6 and MCR22-8 are PNPN Sensitive Gate Silicon Controlled Rectifiers manufactured in a TO-92 case, and designed for CD ignition, fuel igniters,
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MCR22-6
MCR22-8
200mA,
18-June
mcr22
mcr226
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