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    SEMIKRON

    SEMIKRON SEMIX603GB066HDS

    Igbt Power Module; Continuous Collector Current:720A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:40W; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1V; Product Range:- Rohs Compliant: Yes |Semikron SEMIX603GB066HDS
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    Newark SEMIX603GB066HDS Bulk 6
    • 1 -
    • 10 $201.55
    • 100 $189.95
    • 1000 $189.95
    • 10000 $189.95
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    Vyrian SEMIX603GB066HDS 381
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    SEMIKRON SEMIX603GB066HDS (27891132)

    SEMIX; Trench IGBT Module; 600V; 800A | SEMIKRON SEMIX603GB066HDS
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    RS SEMIX603GB066HDS (27891132) Bulk 1
    • 1 $787.18
    • 10 $724.21
    • 100 $724.21
    • 1000 $724.21
    • 10000 $724.21
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    SEMIKRON SEMIX603GB066HDS 27891132

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX603GB066HDS 27891132 1
    • 1 $614.51
    • 10 $485.25
    • 100 $436.01
    • 1000 $436.01
    • 10000 $436.01
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    SEMIX603GB066HDS Datasheets (1)

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    SEMIX603GB066HDS Semikron Trench IGBT Modules Original PDF

    SEMIX603GB066HDS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V


    Original     		SEMiX603GB066HDs SEMiX603GB066HDs E63532 Typical11: PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX603GB066HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX603GB066HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C


    Original     		SEMiX603GB066HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V


    Original     		SEMiX603GB066HDs SEMiX603GB066HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 720 A Tc = 80°C 541 A 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 771 A Tc = 80°C 562 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		SEMiX603GB066HDs PDF

    matrix converter

    Abstract: current source inverter R100exp
    Text: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 720 A Tc = 80°C 541 A 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 771 A Tc = 80°C 562 A A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		SEMiX603GB066HDs B100/125 R100exp B100/125 1/T-1/T100) matrix converter current source inverter PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF