SEMIX452GB176HDS Search Results

SEMIX452GB176HDS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SEMIX452GB176HDS		Semikron	Trench IGBT Modules		Original	PDF

SEMIX452GB176HDS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX452GB176HDs	PDF
Untitled Abstract: No abstract text available Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C	Original	SEMiX452GB176HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V	Original	SEMiX452GB176HDs SEMiX452GB176HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 437 A Tc = 80°C 310 A 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 389 A Tc = 80°C 262 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules	Original	SEMiX452GB176HDs	PDF
sinus Abstract: No abstract text available Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V	Original	SEMiX452GB176HDs SEMiX452GB176HDs E63532 Typic11: sinus	PDF
Untitled Abstract: No abstract text available Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX452GB176HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX452GB176HDs	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF