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    SEMIX452GAL126HDS Search Results

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    SEMIX452GAL126HDS Price and Stock

    SEMIKRON SEMIX452GAL126HDS

    Igbt Module, Single, 1.2Kv, 455A; Continuous Collector Current:455A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX452GAL126HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX452GAL126HDS Bulk 6
    • 1 -
    • 10 $137.19
    • 100 $125.43
    • 1000 $125.43
    • 10000 $125.43
    Buy Now

    SEMIKRON SEMIX452GAL126HDS 27890685

    Module: IGBT; diode/transistor; boost chopper,thermistor; screw
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX452GAL126HDS 27890685 1
    • 1 $432.2
    • 10 $340.69
    • 100 $306.51
    • 1000 $306.51
    • 10000 $306.51
    Get Quote

    SEMIX452GAL126HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMiX452GAL126HDs Semikron Trench IGBT Modules Original PDF

    SEMIX452GAL126HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


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    PDF SEMiX452GAL126HDs E63iX452GAL126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C


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    PDF SEMiX452GAL126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


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    PDF SEMiX452GAL126HDs E63532

    discharge diode

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    PDF SEMiX452GAL126HDs E63532 discharge diode

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


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    PDF SEMiX452GAL126HDs SEMiX452GAL126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


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    PDF SEMiX452GAL126HDs

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


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    PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1