bzx85c10
Abstract: .MODEL BZX85C6V8
Text: Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. TAK CHEONG 1.3 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Rating Symbol Value Units Maximum Steady State Power Dissipation
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DO-41
85Cxxx
DO-204AL)
DB-069
bzx85c10
.MODEL BZX85C6V8
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Untitled
Abstract: No abstract text available
Text: RHYTHM R3910 Pre-configured DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 5 1 http://onsemi.com 25 PAD HYBRID CASE TBD PAD CONNECTION 17 18 VIN1 1 VREG TIN 16 19 N/C 2 MGND DAI 15 20 N/C 3
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R3910
R3910
R3910/D
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SA3410GEVK
Abstract: stereo audio preamplifier bluetooth RF transceiver SA3410GEVB MAX RF transceiver Fingerprint module SA3291 bluetooth rf cmos transceiver circuit diagram of digital hearing aid dsp hearing aid
Text: AYRE SA3291 Pre-configured Wireless DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 3 1 http://onsemi.com 32 PAD HYBRID CASE TBD PAD CONNECTION 20 1 VIN1 N/C GND VIN2 2 TIN N/C MGND 3 VREG 4 VC
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SA3291
SA3291/D
SA3410GEVK
stereo audio preamplifier
bluetooth RF transceiver
SA3410GEVB
MAX RF transceiver
Fingerprint module
bluetooth rf cmos transceiver
circuit diagram of digital hearing aid
dsp hearing aid
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Untitled
Abstract: No abstract text available
Text: RHYTHM R3910 Pre-configured DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 3 1 http://onsemi.com 25 PAD HYBRID CASE TBD PAD CONNECTION 17 18 VIN1 1 VREG TIN 16 19 N/C 2 MGND DAI 15 20 N/C 3 GND
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R3910
R3910/D
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SA3400
Abstract: circuit diagram of digital hearing aid Hearing Aid Circuit Diagram Hearing aids dsp hearing aid circuit hearing instrument WDRC DSP digital hearing aid design
Text: RHYTHM R3910 Pre-configured DSP System for Hearing Aids Description Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 2 1 http://onsemi.com 25 PAD HYBRID CASE TBD PAD CONNECTION 17 18 VIN1 1 VREG TIN 16 19 N/C 2 MGND DAI 15 20 N/C 3 GND
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R3910
R3910/D
SA3400
circuit diagram of digital hearing aid
Hearing Aid Circuit Diagram
Hearing aids dsp
hearing aid circuit
hearing instrument WDRC DSP
digital hearing aid design
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Untitled
Abstract: No abstract text available
Text: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment
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BD159G
BD159/D
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Untitled
Abstract: No abstract text available
Text: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment
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BD159G
BD159/D
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Untitled
Abstract: No abstract text available
Text: BD159 Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment
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BD159
BD159/D
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Untitled
Abstract: No abstract text available
Text: DBA100G 10.0A Single-Phase Bridge Rectifier http://onsemi.com → x × → → → → Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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DBA100G
52098HA
/71096GI
/N098TA,
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je350g
Abstract: No abstract text available
Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •
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MJE350G
MJE340
MJE350/D
je350g
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JE350
Abstract: No abstract text available
Text: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •
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MJE350
MJE340
MJE350/D
JE350
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JE350
Abstract: No abstract text available
Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •
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MJE350G
MJE340
MJE350/D
JE350
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2772C DBB08 0.8A Single-Phase Bridge Rectifier http://onsemi.com Features • • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. Glass passivation for high reliability. Specifications
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EN2772C
DBB08
DBB08-applied
DBB08G
A2772-3/3
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Untitled
Abstract: No abstract text available
Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:
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BUV21
BUV21/D
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SOT-95
Abstract: NL17SG86
Text: NL17SG86 Single 2-Input XOR Gate The NL17SG86 MiniGatet is an advanced high−speed CMOS 2−State XOR gate in ultra−small footprint. The NL17SG86 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features Wide Operating VCC Range: 0.9 V to 3.6 V
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NL17SG86
OT-953
527AE
NL17SG86/D
SOT-95
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NL17SG00P5T5G
Abstract: No abstract text available
Text: NL17SG00 Single 2-Input NAND Gate The NL17SG00 MiniGatet is an advanced high−speed CMOS 2−input NAND gate in ultra−small footprint. The NL17SG00 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •
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NL17SG00
OT-953
527AE
NL17SG00/D
NL17SG00P5T5G
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Untitled
Abstract: No abstract text available
Text: NL17SG04 Single Inverter The NL17SG04 MiniGatet is an advanced high−speed CMOS Inverter in ultra−small footprint. The NL17SG04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • • • • • •
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NL17SG04
OT-953
527AE
NL17SG04/D
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Untitled
Abstract: No abstract text available
Text: NL17SG08 Single 2-Input AND Gate The NL17SG08 MiniGatet is an advanced high−speed CMOS 2−input AND gate in ultra−small footprint. The NL17SG08 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •
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NL17SG08
OT-953
527AE
NL17SG08/D
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Untitled
Abstract: No abstract text available
Text: NL17SG04 Single Inverter The NL17SG04 MiniGatet is an advanced high−speed CMOS Inverter in ultra−small footprint. The NL17SG04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • • • • • •
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NL17SG04
OT-953
527AE
NL17SG04/D
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NL17SG32P5T5G
Abstract: No abstract text available
Text: NL17SG32 Single 2-Input OR Gate The NL17SG32 MiniGatet is an advanced high−speed CMOS 2−input OR gate in ultra−small footprint. The NL17SG32 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • •
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NL17SG32
OT-953
527AE
NL17SG32/D
NL17SG32P5T5G
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Untitled
Abstract: No abstract text available
Text: NL17SG04 Single Inverter The NL17SG04 MiniGatet is an advanced high−speed CMOS Inverter in ultra−small footprint. The NL17SG04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features • • • • • •
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NL17SG04
OT-953
527AE
NL17SG04/D
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Untitled
Abstract: No abstract text available
Text: NL17SGU04 Unbuffered Inverter The NL17SGU04 MiniGatet is an advanced high−speed CMOS unbuffered inverter in ultra−small footprint. The NL17SGU04 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •
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NL17SGU04
OT-953
527AE
NL17SGU04/D
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Untitled
Abstract: No abstract text available
Text: NL17SG34 Single Buffer The NL17SG34 MiniGatet is an advanced high−speed CMOS Buffer in ultra−small footprint. The NL17SG34 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features Wide Operating VCC Range: 0.9 V to 3.6 V
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NL17SG34
OT-953
527AE
NL17SG34/D
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Untitled
Abstract: No abstract text available
Text: NL17SG02 Single 2-Input NOR Gate The NL17SG02 MiniGatet is an advanced high−speed CMOS 2−input NOR gate in ultra−small footprint. The NL17SG02 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features •
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NL17SG02
OT-953
527AE
NL17SG02/D
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