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    SEMICONDUCTOR BODY MARKING DK Search Results

    SEMICONDUCTOR BODY MARKING DK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SEMICONDUCTOR BODY MARKING DK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


    Original     		PDF AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)


    Original     		PDF DKI06108 O-252 DKI06108-DS

    Untitled

    Abstract: No abstract text available
    Text: 30 V, 48 A, 5.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI03062 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 31 A)


    Original     		PDF DKI03062 O-252 DKI03062-DS

    Untitled

    Abstract: No abstract text available
    Text: 30 V, 48 A, 3.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI03038 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.2 mΩ max. (VGS = 10 V, ID = 47.2 A)


    Original     		PDF DKI03038 O-252 DKI03038-DS

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 28 A, 20.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10299 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 28 A  RDS(ON) - 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A)


    Original     		PDF DKI10299 O-252 DKI10299-DS

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 29 A, 9.5 mΩ Low RDS ON N ch Trench Power MOSFET DKI04103 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 11.8 mΩ max. (VGS = 10 V, ID = 18.8 A)


    Original     		PDF DKI04103 O-252 DKI04103-DS

    Untitled

    Abstract: No abstract text available
    Text: 30 V, 29 A, 7.1 mΩ Low RDS ON N ch Trench Power MOSFET DKI03082 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 8.8 mΩ max. (VGS = 10 V, ID = 25 A)


    Original     		PDF DKI03082 O-252 DKI03082-DS

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 47 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET DKI04077 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)


    Original     		PDF DKI04077 O-252 DKI04077-DS

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 25 A, 16.7 mΩ Low RDS ON N ch Trench Power MOSFET DKI06261 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 25 A  RDS(ON) - 21.9 mΩ max. (VGS = 10 V, ID = 12.5 A)


    Original     		PDF DKI06261 O-252 DKI06261-DS

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 31 A, 11.8 mΩ Low RDS ON N ch Trench Power MOSFET DKI06186 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 31 A  RDS(ON) - 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)


    Original     		PDF DKI06186 O-252 DKI06186-DS

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 19 A, 34.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10526 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 19 A  RDS(ON) - 54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)


    Original     		PDF DKI10526 O-252 DKI10526-DS

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 48 A, 4.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04046 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 5.6 mΩ max. (VGS = 10 V, ID = 35.4 A)


    Original     		PDF DKI04046 O-252 DKI04046-DS

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 15 A, 50.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10751 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 15 A  RDS(ON) - 72.6mΩ max. (VGS = 10 V, ID = 7.5 A)


    Original     		PDF DKI10751 O-252 DKI10751-DS

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 48 A, 3.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04035 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.3 mΩ max. (VGS = 10 V, ID = 51 A)


    Original     		PDF DKI04035 O-252 DKI04035-DS

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 48 A, 3.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI04035 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 4.3 mΩ max. (VGS = 10 V, ID = 51 A)


    Original     		PDF DKI04035 O-252 DKI04035-DS

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 28 A, 20.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10299 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 28 A  RDS(ON) - 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A)


    Original     		PDF DKI10299 O-252 DKI10299-DS

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)


    Original     		PDF DKI06108 O-252 DKI06108-DS

    Untitled

    Abstract: No abstract text available
    Text: 30 V, 48 A, 5.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI03062 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 31 A)


    Original     		PDF DKI03062 O-252 DKI03062-DS

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 19 A, 34.4 mΩ Low RDS ON N ch Trench Power MOSFET DKI10526 Features Package TO-252  V(BR)DSS - 100 V (ID = 100 µA)  ID - 19 A  RDS(ON) - 54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)


    Original     		PDF DKI10526 O-252 DKI10526-DS

    ON Semiconductor marking

    Abstract: Wafer Fab Plant Codes ST 051 MPC V = Device Code T138A
    Text: MC74VHC1G50 Product Preview Buffer The MC74VHC1G50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G50 353/SC ON Semiconductor marking Wafer Fab Plant Codes ST 051 MPC V = Device Code T138A

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 47 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET DKI04077 Features Package TO-252  V(BR)DSS - 40 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)


    Original     		PDF DKI04077 O-252 DKI04077-DS

    Untitled

    Abstract: No abstract text available
    Text: 30 V, 29 A, 7.1 mΩ Low RDS ON N ch Trench Power MOSFET DKI03082 Features Package TO-252  V(BR)DSS - 30 V (ID = 100 µA)  ID - 29 A  RDS(ON) - 8.8 mΩ max. (VGS = 10 V, ID = 25 A)


    Original     		PDF DKI03082 O-252 DKI03082-DS