FQP47P06
Abstract: No abstract text available
Text: FQP47P06 P-Channel QFET MOSFET - 60 V, - 47 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP47P06
FQP47P06
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38C1
Abstract: HC5503PRC RZ01 TCM38C17 AN9898 EQ-24
Text: HC5503PRC SLIC and the Texas Instruments TCM38C17 Quad Combo Application Note [/Titl e AN 9872 /Subject (HC5 503P RC SLIC and the Texa s Instr umen ts TCM 38C1 7 Quad Com bo Devi ce) /Aut hor () /Keyword s (Inter sil Corporation, semiconducto May 2000 AN9898
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HC5503PRC
TCM38C17
AN9898
38C1
RZ01
AN9898
EQ-24
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a4w 41
Abstract: diode a4W j250k AN9872 HC5503PRC RZ01 TP30 TP3057A TI 3029 772K
Text: [/Titl e AN 9872 /Subject (HC5 503P RC SLIC and the Texa s Instr umen ts TP30 57A Quad Com bo Devi ce) /Aut hor () /Keyword s (Inter sil Corporation, semiconducto r, HC5503PRC SLIC and the Texas Instruments TP3057A Combined PCM CODEC and Filter Application Note
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HC5503PRC
TP3057A
AN9872
a4w 41
diode a4W
j250k
AN9872
RZ01
TP30
TI 3029
772K
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MB88121
Abstract: MB86276 MB86296 wimax soc bldc controller area network market size Brushless DC Motor new
Text: S p r i n g 2 0 0 6 The News on the Latest Semiconducto r Technologies and Products from Fujitsu Microelectronics America, Inc. Network-Security MCU Now Has New Real-Time Kernel and Network Protocol Stack Support from Micriµm Fujitsu has ported Micriµm's µC/OS-II real-time kernel and µC/TCP-IP network protocol stack to its
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32-bit
MB9040x
MB91F470
32-bit
MS333,
CORP-NL-21163-4/2006
MB88121
MB86276
MB86296
wimax soc
bldc controller area network
market size Brushless DC Motor new
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FMMT449
Abstract: No abstract text available
Text: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FMMT449
FMMT449
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Untitled
Abstract: No abstract text available
Text: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FMMT449
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TRANSISTOR W25
Abstract: FMMT549
Text: FMMT549 FMMT549 C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted
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FMMT549
OT-23)
TRANSISTOR W25
FMMT549
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Zener SOD-123
Abstract: EEEFK1H151P GRM188R71E104KA01D vishay resistor 0603 15A ZENER DIODE SMA GENERAL SEMICONDUCTOR lm3000 wurth 06035C273KAT2A GRM188R61E105KA12D LM3000EVAL
Text: National Semiconductor Application Note 1951 Arief Hernadi July 1, 2009 Introduction QUICK SETUP PROCEDURE Step 1: Set the input power supply current limit to 10A. Turn off the input power supply. Connect the input power supply to VIN terminal. Make sure to connect power supply ground to
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LM3000
LM3000.
AN-1951
Zener SOD-123
EEEFK1H151P
GRM188R71E104KA01D
vishay resistor 0603
15A ZENER DIODE SMA GENERAL SEMICONDUCTOR
wurth
06035C273KAT2A
GRM188R61E105KA12D
LM3000EVAL
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SEMICONDUCTO applications
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA DATA SHEET Product Preview MPC9895 Freescale Semiconductor, Inc. Low Voltage PLL Intelligent Low Voltage PLL Intelligent Dynamic Clock IDCS Dynamic ClockSwitch (IDCS) Switch The MPC9895 is a 3.3V compatible, PLL based intelligent dynamic
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MPC9895/D
MPC9895
199707558G
SEMICONDUCTO applications
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FMMT449
Abstract: ssot3
Text: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FMMT449
FMMT449
ssot3
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Untitled
Abstract: No abstract text available
Text: User's Guide SNVA389A – July 2009 – Revised May 2013 AN-1951 LM3000 Evaluation Board 1 Introduction The LM3000 evaluation board is designed to provide the design engineer with a fully-functional power converter based solution using Dual Output Emulated Current Mode Controller in LM3000. This evaluation
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SNVA389A
AN-1951
LM3000
LM3000.
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siemens 8051 microcontroller
Abstract: datasheet microprocessor 8051 16 - bit lcd interface with 8051 microcontroller 8051 with lcd electricity meters 80C51 80C52 C166 C500 C505L
Text: Date: 19980701 Adressed to: For the trade press Title: Siemens Semiconductors launches first 8051 controller with LCD controlle Reference No.: HLSP0698037 Author: Katja Schlendorf s Semiconductors For the trade press Munich, June 1998 Siemens Semiconductors launches first 8051 controller with LCD controlle
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HLSP0698037
C505L
80C51
80C52
32Kbyte
siemens 8051 microcontroller
datasheet microprocessor 8051
16 - bit lcd interface with 8051 microcontroller
8051 with lcd
electricity meters
C166
C500
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A60030P535
Abstract: No abstract text available
Text: A LPH A IN D / SEMICONDUCTO b4E D • 0535443 O Q O iaTb 471 ■ AL P .
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A60030P535
A60033P535
A60036P535
A60039P535
A60040P535
A60042P535
A60044P535
03Alpha
A60030P535
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PZTA42
Abstract: No abstract text available
Text: MPSA42 / MMBTA42 / PZTA42 D iscrete POW ER & S ig n a l Technologies National Semiconducto r " MPSA42 MMBTA42 PZTA42 B SOT-223 NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications Sourced
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MPSA42
MMBTA42
PZTA42
MPSA42
MMBTA42
OT-223
PZTA42
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LM1291
Abstract: "Op Amp" lm 324 ramp generator 555 y4w 43 y4w 54 LM1295 LM1295N N24C
Text: National PRELIMINARY Semiconducto January 1995 LM 1295 DC C ontrolled G eo m etry C orrection System fo r Continuous Sync M onitors General Description Features The LM1295 is specifically designed for use in a continuous sync monitor. The injection-locked vertical oscillator oper
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LM1295
LM1295
24-pin
20-3A
LM1291
"Op Amp" lm 324
ramp generator 555
y4w 43
y4w 54
LM1295N
N24C
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Untitled
Abstract: No abstract text available
Text: Advance Information SEMICONDUCTO LAN CAM W L F am ily APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS > 32,768 M U9C7485 and 16,384 (M U9C6485) word 64-bit width stores 48-bit MAC address plus > 64-bit word width associated data (Port ID, tim e stamp,
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U9C7485)
U9C6485)
64-bit
48-bit
32-bit
160-PIN
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philips catv 860 amplifier ic
Abstract: D200-400 SEMICONDUCTO applications
Text: Philips Semiconducto H 7 1 1 0 fl5 b 0071A73 l| c 4 H IP H IN Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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7110fl2b
OM2Q83/86
philips catv 860 amplifier ic
D200-400
SEMICONDUCTO applications
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SEMICONDUCTO applications
Abstract: DSAIH0002555 melf Schottky glass
Text: DO-35 Glass Applications 1 1N5711, 1N6263& SD101 series Schottky Diodes Guard ring protected schottky barrier. Low forward drop. Fast switching, higJ* ! f rformance replacement for small signal devices. Exce|ent applications. DO -35 Glass Package * Six Sigma; quality
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DO-35
1N5711,
1N6263&
SD101
DO-213AA)
1N5711
1N6263
SD101A
SD101B
SD101C
SEMICONDUCTO applications
DSAIH0002555
melf Schottky glass
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RE52
Abstract: CCA-5 MAS 10 RCD MSM514260 FKS3
Text: O K I Semiconductor MSC23B33-xxBS4/DS4 524,288-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M SC 23B33-xxBS4/D S4 is a fully decoded 524,288-word x 32-bit CM OS Dynamic Random Access Memory Module composed of four 4-Mb DRAMs in SOJ MSM514260 packages mounted w ith two 0.2 |iF
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MSC23B33-xxBS4/DS4
288-Word
32-Bit
MSC23B33-xxBS4/DS4
MSM514260)
72-pin
RE52
CCA-5
MAS 10 RCD
MSM514260
FKS3
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BAL74
Abstract: SOT23 DIODE marking CODE AV Philips MBB diode RL-250
Text: Philips Semicon b iE P bbS3^31 Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. TSO IAPX Product specification N AUER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION
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BAL74
7Z96385
BAL74
SOT23 DIODE marking CODE AV
Philips MBB
diode RL-250
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23108B /B L -xxD S2 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of two 4-Mb DRAM s in SOJ M SM 514400B/BL packages mounted
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MSC23108B/BL-xxDS2
576-Word
MSC23108B
MSM514400B/BL)
30-pin
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Untitled
Abstract: No abstract text available
Text: FMMT449 F A IR C H IL D SEM IC ONDUCTO R tm FMMT449 B SuperS0T -3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings*
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FMMT449
o22oY
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSC23836-XXBS24/DS24 [Pr D0Qir:0[rlS3^ 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC23836-xxBS24/D S24 is a fully decoded 8,388,608-word x 36-bit CM OS Dynamic Random Access Memory Module com posed of sixteen 16-Mb DRAM s in SOJ MSM5117400 packages and eight 4
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MSC23836-xxBS24/DS24
608-Word
36-Bit
MSC23836-xxBS24
/DS24
16-Mb
MSM5117400)
MSM514100B)
MSM5117400
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-word x 9-bit CM OS D ynam ic Random Access Memory Module com posed of nine 4-Mb DRAMs in SOJ M SM 514100B/BL packages, mounted
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MSC23409B/BL-XXDS9
304-Word
MSC23409B
MSM514100B/BL)
30-pin
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