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    TE Connectivity HVIA-SEMICON-BLADE40/130

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    Onlinecomponents.com HVIA-SEMICON-BLADE40/130
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    Master Electronics HVIA-SEMICON-BLADE40/130
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    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
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    TTI 2N7002,215 Reel 7,167,000 3,000
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    Nexperia BAT54S,215

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT23/TO-236A
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    TTI BAT54S,215 Reel 6,165,000 3,000
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    Nexperia BAV99,215

    Small Signal Switching Diodes DIODE-SML SIGNAL SOT23/TO-236A
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    TTI BAV99,215 Reel 4,119,000 3,000
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    Nexperia PMBT3904,215

    Bipolar Transistors - BJT SOT23 40V .2A NPN SWITCHING
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    TTI PMBT3904,215 Reel 2,706,000 3,000
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    SEMICON Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100C Semicon Components Silicon Avalanche Rectifiers 1 to 350 Amp Selection Guide Scan PDF
    100H3P Semicon Components Silicon Avalanche Rectifiers 1 to 350 Amp Selection Guide Scan PDF
    100H3RP Semicon Components Fast Recovery Rectifier Scan PDF
    100LA Semicon Components Silicon Avalanche Rectifiers 1 to 350 Amp Selection Guide Scan PDF
    100M Semicon Components Silicon Avalanche Rectifiers 1 to 350 Amp Selection Guide Scan PDF
    10BFR75 Semicon Components Fast Recovery Rectifier Scan PDF
    10C Semicon Components Silicon Avalanche Rectifiers 1 to 350 Amp Selection Guide Scan PDF
    10CZ10 Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ100 Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ100A Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ100B Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ10A Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ10B Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ11 Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ110 Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ110A Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ110B Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ11A Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ11B Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    10CZ12 Semicon Components Silicon Transient Voltage Suppressor Scan PDF
    ...

    SEMICON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistors bipolar

    Abstract: japan brt
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1130MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single


    Original     		PDF RN1130MFV RN2130MFV RN1130MFV 16-Apr-09 transistors bipolar japan brt

    SZZU001B

    Abstract: CD4012BE harris CD4011BF3 5035 cd4011bf3a CD4012BE texas
    Text: Data sheet acquired from Harris Semiconductor SCHS021 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF SCHS021 CD4023BF3A CD4023BM CD4023BM96 CD4023BNSR CD4023BPW CD4023BPWR JM38510/05053BCA SZZU001B CD4012BE harris CD4011BF3 5035 cd4011bf3a CD4012BE texas

    Untitled

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FH93NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity


    Original     		PDF TLCS-870/C TMP86FH93NG

    05152

    Abstract: CD4027B CD4027BE
    Text: Data sheet acquired from Harris Semiconductor SCHS032 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF SCHS032 CD4027BE CD4027BF CD4027BF3A CD4027BM CD4027BNSR CD4027BPW CD4027BPWR JM38510/05152BEA 05152 CD4027B CD4027BE

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TLRMH30TP F Category: Optical Semiconductor Devices/Visible LEDs/High-Brightness LED Lamps(Φ5)


    Original     		PDF TLRMH30TP 16-Apr-09

    SCBA004C

    Abstract: scaa035b
    Text: Data sheet acquired from Harris Semiconductor SCHS287 This data sheet is applicable to the CD54/74AC240, CD54ACT240, CD54AC241, and CD54/74ACT241. The CD74AC241 was not acquired from Harris Semiconductor. See SCHS244 for information on the CD74ACT240, CD74AC244, and CD74ACT244.


    Original     		PDF SCHS287 CD54/74AC240, CD54ACT240, CD54AC241, CD54/74ACT241. CD74AC241 SCHS244 CD74ACT240, CD74AC244, CD74ACT244. SCBA004C scaa035b

    tc258c

    Abstract: No abstract text available
    Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA VI < D ISC RETE/O PTO TOSHIBA SEMICONDUCTOR T o s h ib a DE I TEHTEiSD GGlbflia 99D 16812 D T -B 9 -1 3 FIELD EFFECT TRANSISTOR Y T F *4 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA TT-MOS I ) HIGH SPEED, HI G H C U RRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF 250liA 250uA 00A/ys tc258c

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		PDF TIM1414-4LA-371 TIM1414-4LA-371

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000


    OCR Scan     		PDF TIM0910-15L 30dBm 145mA 2-11C1B)

    POUT315

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF -45dBc TIM5964-16SL-081 2-16G1B) POUT315

    TOSHIBA RECTIFIER

    Abstract: No abstract text available
    Text: Introduction Thank you very much for using TOSHIBA Semiconductor Devices. This volume is the latest 1994 Version o f the “ Recti­ fiers” Semiconductor Data Book. Recent years have seen the phenomenal propagation o f elec­ tronic equipment o f all kinds including information processing


    OCR Scan     		PDF

    1SS TRANSISTOR

    Abstract: No abstract text available
    Text: TOSHIBA 9 Ó 9 7 2 5 0 TO SHIBA ~hìhi -CDISCRET E / O P T O } =H D IS C R E T E /O P T O 99D D E I lU'lveSQ □□ I b ' m 16991 DT^3-£>5~ TOSHIBA FIELD EFFECT TRANSISTOR ARRAY SEMICONDUCTOR S 3 5 1 3 TECHNICAL DATA S I L I C O N N C H A N N E L M O S T Y P E (4 in 1)


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 80C32/80C52 Semiconductors CMOS 0 to 44 MHz Single Chip 8-bit Microcontroller 1. Description TEMIC’s 80C52 and 80C32 are high performance CMOS versions of the 8052/8032 NMOS single chip 8 bit Microcontroller. The fully static design of the TEMIC 80C52/80C32


    OCR Scan     		PDF 80C32/80C52 80C52 80C32 80C52/80C32 80C32: 80C52 80C32/80C52-L16:

    227G

    Abstract: No abstract text available
    Text: TO SHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP227G, TLP227G-2 DATA PHOTO RELAY TENTATIVE DATA T LP 227G CORDLESS TELEPHONE PABX MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic


    OCR Scan     		PDF TLP227G, TLP227G-2 TLP227G TLP227G 120mA 2500Vrms 227G

    E5550 temic

    Abstract: No abstract text available
    Text: Tem ic e5550 Semiconductors Standard Read/Write Identification IC Description The e5550 is a contactless R/W-IDentification IC IDIC * for general-purpose applications in the 125 kHz range. A single coil, connected to the chip, serves as the IC's power supply and bidirectional communication


    OCR Scan     		PDF e5550 e5550 D-74025 17-Mar-98 E5550 temic

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {D IS CRETE /OPT O} DE • TDTTSSD □□It.ñOñ 4 99D 16808 9097250 TOSHIBA <DISCRETE/OPTO> SEMICONDUCTOR ¿/ashihi I Ti TO SH IBA F IE L D EFFEC T D'F-Sq-IS TRA N SISTO R Y T F 2 5 2 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E ff-M O S H


    OCR Scan     		PDF 100nA 250uA 250uA Tc-25 00A/us

    Untitled

    Abstract: No abstract text available
    Text: T e m ic TCET1600 up to TCET4600 Semiconductors Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consist of a phototransistor optically coupled to 2 gallium arsenide inffared-emitting diodes in a 4-lead up to 16-lead plastic


    OCR Scan     		PDF TCET1600 TCET4600 TCET1600/ TCET2600/ TCET4600 16-lead D-74025 04-Dec-97

    SG3000GXH29

    Abstract: SG3000GXH 13-108D1A
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent


    OCR Scan     		PDF SG3000GXH29 SG3000GXH29) SG3000GXH29 SG3000GXH 13-108D1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL 4N38 Short , 4N38A(Short) DATA GaAs IRED & PHOTO-TRANSISTOR (4N38(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL.


    OCR Scan     		PDF 4N38A 2500Vrms UL1577, E67349 11-7A8

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		PDF 28dBm JS9P05-AS 38GHz

    MPS-92

    Abstract: mps92 MPS93
    Text: TOSHIBA MPS92 MPS93 Discrete Semiconductors Silicon PNPTransistor For High Voltage Application Features • High Voltage - Vceo = -300V MPSA92 - Vceo = -200V (MPSA93) • Low Saturation Voltage " VcE(sat) = (Max-) @ b = -20mA, lB = -2mA • Low Collector Output Capacitance


    OCR Scan     		PDF MPS92 MPS93 -300V MPSA92) -200V MPSA93) -20mA, MPSA42, MPS-92 MPS93

    2SC16

    Abstract: No abstract text available
    Text: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2S01677 270UHz) 2SC16

    4N33 APPLICATION NOTE

    Abstract: 4N29 APPLICATION NOTE 4N32A 4N32ASHORT 4n29
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


    OCR Scan     		PDF 4N29A 4N32A 2500Vrms UL1577, E67349 4N33 APPLICATION NOTE 4N29 APPLICATION NOTE 4N32ASHORT 4n29

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POW ER MMIC S9782 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminarv 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C ^ CHARACTERISTICS |SYMBOL CONDITION | M IN. 1 TYP. O u tp u t Pow er Po 37.0 38.0 v d d i= v d d 2 = v d d 3 = io v U N IT —


    OCR Scan     		PDF S9782 37dBm 1600MHz 2-11E1A)