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    SELECTION CRITERIA OF BIPOLAR TRANSISTOR Search Results

    SELECTION CRITERIA OF BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SELECTION CRITERIA OF BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    circuit diagram electronic choke for tube light

    Abstract: osram transistor Electronic ballast ELECTRONIC BALLAST transistor DIAGRAM 40 w electronic tube light choke Electronic ballast circuit diagram 230 v 20 w ELECTRONIC BALLAST 8W fluorescent lamp transistor Electronic ballast electronic 40 w tube light choke ANT016 rk2 zener
    Text: TELEFUNKEN Semiconductors ANT016 Bipolar Power Transistors in Electronic Ballasts Selection Criteria and System Requirements Issue: 11. 95 ANT016 TELEFUNKEN Semiconductors Table of Contents Introduction .1


    Original     		PDF ANT016 BUF654 BYT51K BYT52K circuit diagram electronic choke for tube light osram transistor Electronic ballast ELECTRONIC BALLAST transistor DIAGRAM 40 w electronic tube light choke Electronic ballast circuit diagram 230 v 20 w ELECTRONIC BALLAST 8W fluorescent lamp transistor Electronic ballast electronic 40 w tube light choke ANT016 rk2 zener

    mosfet equivalent

    Abstract: selection criteria of bipolar transistor totempole driver resonant converter
    Text: FEATURE ARTICLE Applications Dictate Bipolar or MOSFET Power Switch Choices Despite huge investments in MOSFET technologies over recent years, bipolar transistors have continued to be developed to rival or exceed MOSFET performance in many applications. It's therefore important


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    EB213

    Abstract: transistor 6274 selection criteria of bipolar transistor
    Text: Freescale Semiconductor Engineering Bulletin EB213 Rev. 0, 5/2003 Surge - Ringing Wave Clamp for GaAs CATV Module Protection by: Jeff Gengler Freescale Semiconductor INTRODUCTION CLAMP DEVICE SELECTION CRITERIA CATV amplifiers are required to withstand surges induced


    Original     		PDF EB213 EB213 transistor 6274 selection criteria of bipolar transistor

    selection criteria of bipolar transistor

    Abstract: motorola sps transistor motorola bipolar transistor EB213 motorola special modules motorola transistor selection
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR ENGINEERING BULLETIN Order this document by EB213/D EB213 Surge-Ringing Wave Clamp for GaAs CATV Module Protection Freescale Semiconductor, Inc. Prepared by: Jeff Gengler Motorola Semiconductor Products Sector


    Original     		PDF EB213/D EB213 selection criteria of bipolar transistor motorola sps transistor motorola bipolar transistor EB213 motorola special modules motorola transistor selection

    oldham battery charger

    Abstract: oldham battery charger LIFE TIME ZXT2M322 AN40 zetex fzt788b Li-ion battery SOT23-6 5v diode an40 zetex transistors FMMT718 NCP1800
    Text: Application Note 40 Lithium Ion Battery Charging Using Bipolar Transistors Introduction Portable applications such as cell phones are becoming increasingly complex with more and more features designed into every generation. This increasing number of features combined


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    mosfet driver with npn transistor

    Abstract: HIGH SPEED SWITCHING NPN SOT23 pnp low power fast switching transistor ZXTD6717 FMMT491A FMMT591A FMMT617 FMMT717 FMMTL618 12 mosfet sot23
    Text: DN80 Bipolar transistors for MOSFET gate driving applications Peter Blair, Product Development Manager Over the last few years MOSFETs have become the device of choice in power switching applications. Whilst on-resistances have significantly reduced, they often require a driver stage


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    RT9641A

    Abstract: 2x15 ATX 235 RT9230 RT9231 RT9641ACS2 RT9641B RT9641BCS2 RDRAM SOP CEB603AL equivalent
    Text: RT9641A/B Triple Linear Regulator Controller Support ACPI Control Interface General Description The RT9641A/B, paired with either the RT9230 or powered through two external MOS transistors. In RT9231 simplifies the implementation of ACPI- sleep states, a PMOS or PNP transistor conducts


    Original     		PDF RT9641A/B RT9641A/B, RT9230 RT9231 16-pin DS9641A/B-03 RT9641A 2x15 ATX 235 RT9641ACS2 RT9641B RT9641BCS2 RDRAM SOP CEB603AL equivalent

    ZETEX T 1049

    Abstract: rele 12V 10A mosfet base inverter with chargers circuit zetex line TRANSISTOR REPLACEMENT GUIDE ZETEX 1049 ZDT1049 zetex 795a laptop inverter ccfl dc-ac converter royer jim Williams
    Text: Application Note 21 Issue 2 January 1996 Bipolar Transistor Considerations for Battery Powered Equipment Leading to Efficiency and Competitive Advantages in Portable Systems Neil Chadderton Introduction The last few years has witnessed an increasing trend towards portability, this no


    Original     		PDF 15mmx15mm FMMT717 ZETEX T 1049 rele 12V 10A mosfet base inverter with chargers circuit zetex line TRANSISTOR REPLACEMENT GUIDE ZETEX 1049 ZDT1049 zetex 795a laptop inverter ccfl dc-ac converter royer jim Williams

    ZETEX GATE DRIVER

    Abstract: ZXGD3004E6 ZXGD3003E6 ZXGD3003 PNP POWER TRANSISTOR SOT23 MOSFET sot23-6 npn 2222 transistor selection criteria of bipolar transistor ZXGD3002 ZXGD3002E6
    Text: DN80 Bipolar transistors for MOSFET gate driving applications Peter Blair, Product Development Manager Over the last few years MOSFETs have become the device of choice in power switching applications. Whilst on-resistances have significantly reduced, they often require a driver stage


    Original     		PDF D-81541 ZETEX GATE DRIVER ZXGD3004E6 ZXGD3003E6 ZXGD3003 PNP POWER TRANSISTOR SOT23 MOSFET sot23-6 npn 2222 transistor selection criteria of bipolar transistor ZXGD3002 ZXGD3002E6

    36V Li-Ion battery charge controller

    Abstract: 36V Li-Ion battery charger oldham battery charger datasheet ZXTP25020CMA car mp3 charging lithium ic transistor cell phone charger AN40 TS16949 ZHCS1000
    Text: AN40 Lithium Ion battery charging using bipolar transistors Khagendra Thapa, Systems Engineer, Zetex Semiconductors Introduction Portable hand-held applications such as cell phones, PDAs, etc are becoming increasingly complex with more and more features designed into every generation. This increasing number


    Original     		PDF D-81541 36V Li-Ion battery charge controller 36V Li-Ion battery charger oldham battery charger datasheet ZXTP25020CMA car mp3 charging lithium ic transistor cell phone charger AN40 TS16949 ZHCS1000

    NT 407 F TRANSISTOR

    Abstract: laptop inverter ccfl Royer converter buck royer inverter lcd BAV99 application royer converter application note Royer Royer resonant GENERALISED RESISTOR DATASHEET CTX110092
    Text: Application Note 14 Issue 2 March 1996 Transistor Considerations for LCD Backlighting High Efficiency DC to AC Conversion Neil Chadderton Introduction LCD Backlighting has generated widespread interest from many diverse disciplines within the engineering industry. This has no doubt been fueled


    Original     		PDF FZT869 OT223) ZTX689B FZT689B FMMT619 125mV 200mV ZTX1048A ZDT1048 NT 407 F TRANSISTOR laptop inverter ccfl Royer converter buck royer inverter lcd BAV99 application royer converter application note Royer Royer resonant GENERALISED RESISTOR DATASHEET CTX110092

    Stepper motor and driver selection

    Abstract: application note driver motor stepper ULN floppy disk Stepping Motors stepper drive uln 2003 stepper motor electronic damping pm500 watt power supply circuit diagram ic. uln 2003 30W dc motor current driver stepper motor driver uln 2003
    Text: Stepper motor and driver selection Stepper motors are used in many different types of applications this makes it difficult to recommend a general step-by-step design flow chart. The design process is more an iterative process, involving experience, calculation


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    520301006R

    Abstract: 2N5154RESYHRG
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		PDF 2N5154HR O-257 2N5154HR O-257 DocID15387 520301006R 2N5154RESYHRG

    st smd IC marking code

    Abstract: 2N5154ESYHRT
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		PDF 2N5154HR O-257 2N5154HR O-257 DocID15387 st smd IC marking code 2N5154ESYHRT

    593D

    Abstract: HIP6020 HIP6020A HIP6020ACB HUF76107D3S
    Text: HIP6020A TM Data Sheet April 1999 Advanced Dual PWM and Dual Linear Power Controller The HIP6020A provides the power control and protection for four output voltages in high-performance, graphics intensive microprocessor and computer applications. The IC integrates two PWM controllers and two linear controllers, as


    Original     		PDF HIP6020A HIP6020A 28-pin 593D HIP6020 HIP6020ACB HUF76107D3S

    bipolar transistor ghz s-parameter

    Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
    Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in


    Original     		PDF HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10

    RF Transistor s-parameter

    Abstract: HBFP-0450 ADS MODEL HBFP0450
    Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium


    Original     		PDF HBFP-0450 OT-343 SC-70) 031-inch 5968-2788E RF Transistor s-parameter HBFP-0450 ADS MODEL HBFP0450

    triggering scr with microprocessor

    Abstract: three phase ssr snubber calculation RC snubber scr design inductive load triac based ssr how to check scr "triac protection" overcurrent MOSFET based SSR RC snubber scr design "cold start" scr ac ssr
    Text: SSR Technicalities 1 What is a Solid State Relay? An electronic switch made up of solid state components. No mechanical contacts or moving parts. 2 Basic Switching Element of the SSR The SSR is powered by the AC Line itself, by connecting the 2 gates of the output SCR’s


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    AN734

    Abstract: Si9181
    Text: AN734 Vishay Siliconix Design Guidelines for the Low-Noise Low-Dropout Regulator—Si9181 Nitin Kalje The Si9181 was designed for applications requiring a regulated voltage equal to or less than the voltage of the source or battery, and requiring very low output noise. Such applications


    Original     		PDF AN734 Regulator--Si9181 Si9181 31-Oct-00 AN734

    S1918

    Abstract: AN733 Si9182 Si9181
    Text: AN733 Vishay Siliconix Design Guidelines for the Low-Noise Low-Dropout Regulator—Si9182 Nitin Kalje The Si9182 was designed for applications requiring a regulated voltage equal to or less than the voltage of the source or battery, and requiring very low output noise. Such applications


    Original     		PDF AN733 Regulator--Si9182 Si9182 15-Nov-00 S1918 AN733 Si9181

    ATX 235

    Abstract: p-chanel mosfet atx 2003 ACPI Regulator-Controller all transistor capacitor 200uF 12V 2SD1802 RT9230 RT9231 RT9641A
    Text: RT9641A/B General Description Triple Linear Regulator Controller Support ACPI Control Interface Features The RT9641A/B, paired with either the RT9230 or RT9231 simplifies the implementation of ACPI-compliant designs in microprocessor and computer applications. The IC


    Original     		PDF RT9641A/B RT9641A/B, RT9230 RT9231 16-pin 16-Lead ATX 235 p-chanel mosfet atx 2003 ACPI Regulator-Controller all transistor capacitor 200uF 12V 2SD1802 RT9231 RT9641A

    VB020

    Abstract: airbag wasted spark ignition driver digital door lock system circuit diagram tda2005 application notes B100 BCD60 L552 L9937 TDA2005
    Text: APPLICATION NOTE SMART POWER TECHNOLOGIES FOR POWERTRAIN & BODY ELECTRONICS by R. Ferrari Smart power ICs are becoming increasing by common in automotive powertrain and body electronics. This note provides a general introduction to the subject. As is well known, electronics is slowly but progressively invading every part of the automotive


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    A New Generation of Analog Voltage Comparators

    Abstract: ALD2721 ramp generator capacitor-based ALD4213 1108E 1110E ALD1721 ALD2321 selection criteria of bipolar transistor
    Text: A New Generation of Analog Voltage Comparators By Robert L. Chao and John P. Skurla Advanced Linear Devices, Inc. Sunnyvale, California Introduction For decades, analog voltage comparators have found a wide range of applications in mixed signal sensor circuits, those used to


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    anzac directional couplers

    Abstract: anzac anzac frequency Anzac h-183-4
    Text: AMPLIFIER APPLICATION NOTE INTRODUCTION Broadband radio frequency amplifiers, designed for operation below microwave frequencies, gen­ erally use high-gain bipolar transistors in combina­ tion with negative feedback circuitry. This note presents a discussion of feedback with emphasis on


    OCR Scan     		PDF