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    10N08

    Abstract: DIODE c318 SEFP10N1 SEFM10N08
    Text: S G S-THOMSON 07E D | 7 ^ 5 3 ? M 73C 175.95 SEFM10N08 SEFH10N10 SEFP10N08 SEFPI0H10 * HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE M AXIM U M RATINGS !gm P.ot ^stg Ti 0 J li . / , N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate


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    PDF SEFM10N08 SEFH10N10 SEFP10N08 SEFPI0H10 0V/100V 10N08 300ms* DIODE c318 SEFP10N1