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    SEEQ EEPROM Search Results

    SEEQ EEPROM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    R1EX24064ATA00I#S0 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    HN58V1001RT25VE Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    HN58V66ATI10E Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    HN58V66AFP10EZ Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    HN58X25128TI#S0 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    HN58C256AFPI85E Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation

    SEEQ EEPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VALOR ST7033

    Abstract: sT7033 8502 8502a plcc trasmitter "aui transformer" OUI15 CAP_TH 9346 EEPROM seeq EM2C
    Text: 8502 8502 Ethernet MII to AUI Interface Adapter 98210 This document is an LSI Logic document. Any reference to SEEQ Technology should be considered LSI Logic. Note: Check for latest Data Sheet revision before starting any designs. SEEQ Data Sheets are now on the Web, access


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    PDF NQ8502 NQ80220 MD400157/D VALOR ST7033 sT7033 8502 8502a plcc trasmitter "aui transformer" OUI15 CAP_TH 9346 EEPROM seeq EM2C

    VALOR ST7033

    Abstract: ST7033 "aui transformer" "aui transformers" "Attachment Unit Interface" lsi AUI lsi S553-1006 T55 transformer datasheet t90 series SCHEMATIC mda
    Text: 8502 8502 Ethernet MII to AUI Interface Adapter 98210 Features Note: Check for latest Data Sheet revision before starting any designs. • Single Chip Connecting MII and AUI Interfaces SEEQ Data Sheets are now on the Web, at www.lsilogic.com. ■ AUI Interface to Ethernet Transceiver


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    PDF MD400157/D NQ8502 NQ80220 VALOR ST7033 ST7033 "aui transformer" "aui transformers" "Attachment Unit Interface" lsi AUI lsi S553-1006 T55 transformer datasheet t90 series SCHEMATIC mda

    eeprom 2816

    Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
    Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel


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    PDF 2864B AT28HC16 AT28C64 AT28C64E AT28C64X AT28HC64 AT28PC64 AT28C64F AT28C2S6 AT28C256F eeprom 2816 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864

    75a5

    Abstract: 48F010-200 47F010-200 47F010-250 47F010-300 48F010-250 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25
    Text: - 158 — 28 F O 1O ¥ 7. 'f 7 f* > VDD as -h /m %. % «i ns 0-71) 200 200 75 50 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 47F010-250 SEEQ 0-70 250 250 100 60 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 (*C> TOD •ax (ns) 1 A SEEQ 45 TOH US 47F01Q-200


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    PDF 47F010-200 47F010-250 47F010-300 48F010-200 48F010-250 28F010( 75a5 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25

    D28F512

    Abstract: flash eeprom D28F010
    Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent


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    PDF D28F512 D28F010 MC48F512 MC48F010 64KX8 48F512 48F010 48F010 1024K flash eeprom

    Untitled

    Abstract: No abstract text available
    Text: eeeo 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • ■ ■ ■ ■ ■ ■ ■ The 48F010 is a 1024K bit CMOS FLASH EEPROM organizedas 128Kx8bits. SEEQ‘s48F010 brings together the high density and cost effectiveness of UVEPROMs,


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    PDF 48F010 1024K 48F010 128Kx8bits. s48F010 MD400063/A MD400063/A

    Untitled

    Abstract: No abstract text available
    Text: seeQ 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Description Features • ■ 128K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ ■ ■ Input Latches tor Writing and Erasing


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    PDF 48F010 1024K 48F010 128Kx8bits. s48F010 MD400063/A

    F65535

    Abstract: 74LS4S ST L 6203
    Text: SEEQ Technology, Incorporated 80C04A AutoDUPLEX CMOS Ethernet Data Link Controller March 1994 PRELIMINARY Features • Pinout and function compatible with the 80C04 - 4 new Transmit Packet Statua bits Indicating following transmit packet status conditions:


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    PDF 80C04A 80C04 30C04 F65535 74LS4S ST L 6203

    Untitled

    Abstract: No abstract text available
    Text: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Description Features m Military and Extended Temperature Range SEEO’s E/M28C64 is a CMOS 5Vonty, 8 K x8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ’s advanced 1.25 micron


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    PDF E/M28C64 E/M28C64 M28C64 MD400001/D 28C64 125-C

    48F512

    Abstract: No abstract text available
    Text: seeQ 48F512 512K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • 64K Byte Flash Erasable Non-Volatile Memory ■ Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ Input Latches for Writing and Erasing The 48F512is a 512Kbit CMOS FLASH EEPROM organ­


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    PDF 48F512 48F512is 512Kbit 48F512 MD400062/A

    Untitled

    Abstract: No abstract text available
    Text: seeQ 47F512 512K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET I Block Diagram Features • 64K Byte Flash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Low Power CMOS Process ■ Flash EPROM Cell Technology ■ Fast Byte Write: 225 ps max


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    PDF 47F512 MD400076/- 47F512

    m2817a

    Abstract: 16K Electrically Erasable PROMs
    Text: E/M2817A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • Military and Temperature Range • -55° C to + 1251C: M2817A Military • -4 0 0 C to +85° C: E2817A (Extended) SEEQ’s M2817A is a 5 Vonly, 2Kx 8 electrically erasable


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    PDF E/M2817A 1251C: M2817A E2817A M2817A MD400015/B 16K Electrically Erasable PROMs

    72720

    Abstract: 1S34 TP register file
    Text: SEEd TECHNOLOGY INC Tfl D e J 611^533 0D015H7 ä 98D 01227 8 1 1 9 2 3 3 SEEQ TECHNO L O G Y INC S@ Q D T -W-19-05 72720 Self-Adaptive E2 Single Chip Microcomputer March 1987 PRELIMINARY DATA SHEET Features Description • On Chip 5V EEPROM Program Memory: 2 K x 8


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    PDF 0D015H7 -W-19-05 Cycleas400ns 10MHz 250ns 16MHz MD400Q05/- 72720 1S34 TP register file

    Untitled

    Abstract: No abstract text available
    Text: ISIIRIIM M ' 8502 •■■ Ethernet Mil to AUI Interface Adapter 98210 This document is an LSI Logic document. Any reference to SEEQ Technology should be considered LSI Logic. Features ■ Single Chip Connecting Mil and AUI Interfaces ■ AUI Interface to Ethernet Transceiver


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    PDF MD400157/D

    SEEQ 52B33

    Abstract: seeq52b33 seeq eeprom
    Text: 52B33/52B33H 64K Electrically Erasable PROM October 1987 Features Description • SEEQ’s 52B33 is a 8 1 9 2 x8 bit, 5 volt electrically erasable programmable read only memory EEPROM which is specified over a 0°C to 70'JC temperature range. Data retention is specified to be greater than 10 years. The


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    PDF 52B33/52B33H 52B33/52B33H; 52B33H 52B33 52B33 200ns MD400008/B SEEQ 52B33 seeq52b33 seeq eeprom

    Untitled

    Abstract: No abstract text available
    Text: 28C65 Timer E2 64K Electrically Erasable PR O M October 1989 Features Description • C M O S Technology ■ Lo w P ow er SEEO's 28C65 is a CMOS 5V only, 8K x 8 Electrically Erasable Programmable Read Only Memory EEPHOM . It is manufactured using SEEQ’s advanced 1.25 micron


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    PDF 28C65 28C65 MD400025/C

    48128

    Abstract: 27128 eprom MD4000 EEPROM 27128
    Text: O c to b e r 1987 PRELIMINARY DATASHEET Features Description m 128K 16K x 8 • Pin Com patible to 2 7 1 2 8 EPROM ■ Low Cost Non-Volatile Memory ■ Chip E r a s e . . . Electrically SEEQ’s 48128 is a new 128K (16K x 8) memory device which combines both EEPROM and EPROM


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    PDF MD400018/A 100ms. MD400018/A 16Kx8 48128 27128 eprom MD4000 EEPROM 27128

    Untitled

    Abstract: No abstract text available
    Text: KT48 000Q FLASH EEPROM Programmer Features Description • ■ KT48 is a FLA S H E E P R O M program m er from SEEQ Technology. The com plete un it consists o f a half-card size hardware board, a ribbon cable connected to a 40-pin Z IF D IP socket and M S /D O S com patible software. The p ro ­


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    PDF 40-pin 128K-bit MD400058/-

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SH EET 72720 Self-Adaptive E2 Single Chip Microcomputer March 1987 Features Description • On C hip 5V E E P R O M Program Mem ory. 2 K x 8 The Seeq 72720 is a full function single chip micro­ com puter fabricated in N channel silicon gate


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    PDF 400ns 10MHz 250ns 16MHz MD400005/-

    Untitled

    Abstract: No abstract text available
    Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically


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    PDF 28C64 28C64 000cycles MD400004/D

    ML50

    Abstract: seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs
    Text: 2816A/5516A Timer E2 16K Electrically Erasable PROMs O ctober 1988 Features • ■ Description High E ndurance Write Cycles • 5S16A : 1,000,000 C ycles/B yte Minim um • 2816A : 10,000 C ycles/B yte Minim um SEEQ 's 5516A an d 2 8 1 6 A are 5 V on !y, 2K x8 electrically


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    PDF 816A/5516A D400016/C 816A/5516A MD40Q016/C ML50 seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs

    48C1024

    Abstract: 48C512
    Text: SEE 2 TECHNOLOGY 8119233 SEEQ TECHNOLOGY INC Tfl "deJ 011^233 ooDina s J - INC 98D 01198 DT-4fc~/3-r7 4 8 C 5 12 / 4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K FLASH EEPROM July 1 987 A D V A N C E D A TA S H E E T Features • 64K /128K B yte Writable Non-Volatile Memory


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    PDF /128K 48C512/48C1024 Q0G1E07 12/48C1024 T-46-13-27 48C1024 48C512

    Untitled

    Abstract: No abstract text available
    Text: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ's48F512 brings together the


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    PDF 48F512 48F512is 512Kbit s48F512 MD400062/A 48F512

    01404

    Abstract: SEEQ TECHNOLOGY 48C1024
    Text: SEEÖ S1 19233 TECHNOLOGY SEEQ TECHNOLOGY INC Tö Ô Ë J 011^233 INC □ □ □ 1 3 cî h 98D 0 1396 M DJ~Q6-I3'Z1 4 8 C 5 1 2 /4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K F L A S H E E P R O M J u ly 1 98 7 A D V A N C E JJATA S H E E T Features • 64K/128K Byte Writable non-volatile memory


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    PDF 64K/128K Rete8119233 M48C512/48C1024 D0Q14DS T-46-13-27 01404 SEEQ TECHNOLOGY 48C1024