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    SEEQ 38C16 Search Results

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    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


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    PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    eeprom 2816

    Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
    Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel


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    PDF 2864B AT28HC16 AT28C64 AT28C64E AT28C64X AT28HC64 AT28PC64 AT28C64F AT28C2S6 AT28C256F eeprom 2816 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864

    2816A

    Abstract: No abstract text available
    Text: 38C16 38C32 High Speed CMOS Electrically Erasable PROM October 1989 Features • H igh Speed: • 35 n s M axim um A ccess Time P ow er Up/Down Protection Circuitry ■ C M OS Technology ■ Low P ower: • 350 m W JE D E C A pp ro ved B yte W ide P inout


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    PDF 38C16 38C32 s38C16/32are 36C32 MD400029/C 2816A

    Untitled

    Abstract: No abstract text available
    Text: E/M36C16 EM36C32 High Speed CMOS Electrically Erasable PROM October 1989 Description Features • SEEO's E/M36C16/32 are high speed 2Kx 8/4Kx 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.


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    PDF E/M36C16 EM36C32 E/M36C16/32 36C16/32 MD400028/C

    Untitled

    Abstract: No abstract text available
    Text: E/M36C16 EM36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's E/M36C16/32 are high speed 2K x 8/4K x 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.


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    PDF E/M36C16 EM36C32 E/M36C16/32 36C16/32 3GC16/32 MD400028/C

    2BC64

    Abstract: 2816A 28C64 eeprom 2816A Seeq Technology 36C32 seeq 38c16 seeq prom 38C16
    Text: High Speed CMOS Electrically Erasable PROM O ctober 1989 Features • High Speed: • 3 5 n s M axim um A ccess Time P ow er Up/Down P rotection C ircuitry ■ C M O S Technology ■ L o w P ower: • 350 m W JE D E C A pp ro ved B yte Wide P inout • 38C 1 6:2 816 A Pin Com patible


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    PDF 38C16 38C32 38C16 36C16 38C32 MD400029/C 2BC64 2816A 28C64 eeprom 2816A Seeq Technology 36C32 seeq 38c16 seeq prom

    co12f

    Abstract: No abstract text available
    Text: ITE D SEE 3 TECHN OLO GY INC • ñinS33 0Q02bûb 1 E/M36C16 E/M36C32 High Speed CMOS Electrically Erasable PROM October 1989 ”T 4 4 - l V 2 - 7 Features Description ■ M ilitary and Extended Temperature Range • -55° C to +125aC Operation (Military


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    PDF inS33 0Q02b E/M36C16 E/M36C32 125aC E/M36C16/32 38C16-2K* 36C32-4KX8EEPROM MD400028/C co12f

    36C32

    Abstract: No abstract text available
    Text: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's 36C16/32 are high speed 2K x8/4K x 8 Electrically Erasable Programmable Read Only Memories, manufac­ tured using SEEO's advanced 1.25 micron CMOS proc­ ess.


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    PDF 36C16 36C32 36C16/32 36C32 MD400027/C

    J990

    Abstract: E38C32 36C32 eeprom 2816A seeq 2816A
    Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ Military and Extended Temperature flange • -5 5 ° C to +125°C Operation Military • - 4 0 ° C to +85°C Operation (Extended) CMOS Technology


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    PDF E/M38C16 E/M38C32 38C16 38C32 28C64 E/M38C5 MD400030/C J990 E38C32 36C32 eeprom 2816A seeq 2816A

    E38C32

    Abstract: No abstract text available
    Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry


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    PDF E/M38C16 E/M38C32 3SC16 38C32 28C64 MD400030/C E38C32

    ATMEL 620

    Abstract: AT28C16-20 CAT28C16A-20 28C16-15 28C16-20 28C16-25 AT28C16-15 AT28C16-25 AT28C16-45 AT28C16-55
    Text: - 44 - 4-616 X -f € £ it £ CC M a -h/m ^ -h n ft I imtfstiES m TAAC max (ns) TCAC (ns) TOH max (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (mA) VIL max (V) VIH min (V) Ci max (pF) V O L / I VOL max (V/mA) V O H / I VOH min (V/mA) Co max (PF)


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    PDF 28C16-15 28C16-20 28C16-25 38C16- CAT28C16AI-20 048X8) 24PIN ATMEL 620 AT28C16-20 CAT28C16A-20 AT28C16-15 AT28C16-25 AT28C16-45 AT28C16-55