SDRAM 4 BANK 4 MO 16 Search Results

SDRAM 4 BANK 4 MO 16 Result Highlights (5)

Part	Manufacturer	Description
707278L15PF9	Renesas Electronics Corporation	Bank Switchable DP RAM
707278S12PF8	Renesas Electronics Corporation	Bank Switchable DP RAM
707278S25PF9	Renesas Electronics Corporation	Bank Switchable DP RAM
707288L15PFG	Renesas Electronics Corporation	Bank Switchable DP RAM
707288L25PF8	Renesas Electronics Corporation	Bank Switchable DP RAM

SDRAM 4 BANK 4 MO 16 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Hitachi DSA00190 Abstract: No abstract text available Text: HB52RF1289E2U-75B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-562A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 RF12 89 E2 U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリと	Original	PDF	HB52RF1289E2U-75B 128-Mword 72-bit, PC133 ADJ-203-562A Hitachi DSA00190
Hitachi DSA00190 Abstract: No abstract text available Text: HB52RF649E1U-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-560A (Z) 暫定仕様 Rev. 0.1 ’00. 10. 6 概要 Th e HB 52 RF64 9E 1U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリ	Original	PDF	HB52RF649E1U-75B 64-Mword 72-bit, PC133 ADJ-203-560A HB52RF649E1U HM5225405BTBTCP 133MHz Hitachi DSA00190
Hitachi DSA00190 Abstract: No abstract text available Text: HB52R1289E2U-A6B/B6B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC100 SDRAM ADJ-203-561A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 R12 89 E2 U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリとし	Original	PDF	HB52R1289E2U-A6B/B6B 128-Mword 72-bit, PC100 ADJ-203-561A 100MHz HB52R1289E2 Hitachi DSA00190
Untitled Abstract: No abstract text available Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm	Original	PDF	W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB W3H64M72E-XSBXF SN63Pb37 SAC305 256MB"
W3J128M72G-XPBX Abstract: w3j128m72 Text: W3H32M72E-XSB2X 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  54% I/O reduction vs FPBGA	Original	PDF	W3H32M72E-XSB2X W3J128M72G-XPBX w3j128m72
TCKAB Abstract: DNU-A13 Text: White Electronic Designs W3H64M16E-XBX 64M x 16 DDR2 SDRAM 79 PBGA FEATURES  Data rate = 400 Mb/s  Organized as 64M x 16  Package:  Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch  Supply Voltage = 1.8V	Original	PDF
W3H32M72E Abstract: No abstract text available Text: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm	Original	PDF	W3H32M72E-XSB2X W3H32M72E
DNU-A13 Abstract: No abstract text available Text: White Electronic Designs W3H64M16E-XBX 64M x 16 DDR2 SDRAM 79 PBGA FEATURES  Data rate = 667, 533, 400 Mb/s  Organized as 64M x 16  Package:  Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch	Original	PDF
Untitled Abstract: No abstract text available Text: White Electronic Designs W3H64M16E-XBX *PRELIMINARY 64M x 16 DDR2 SDRAM 79 PBGA FEATURES Data rate = 667, 533, 400 Mb/s Organized as 64M x 16 Package: Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch	Original	PDF
18CO Abstract: No abstract text available Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch	Original	PDF	W3H64M64E-XSBX 18CO
CEE 32 Abstract: W3H32M64E-XSBX Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400 Mb/s  Package: • 208 Plastic Ball Grid Array PBGA , 16 x 20mm • 1.0mm pitch  Commercial, Industrial and Military Temperature	Original	PDF	W3H32M64E-XSBX W3H32M64E-XSBX 32M64. CEE 32
Untitled Abstract: No abstract text available Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA	Original	PDF	W3H32M64E-XSBX 256MB 256MB"
Untitled Abstract: No abstract text available Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA	Original	PDF	W3H32M64E-XSBX 256MB 256MB"
Untitled Abstract: No abstract text available Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm	Original	PDF	W3H32M72E-XSBX 667Mbs

W3H32M72E Abstract: BA0BA12 Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm	Original	PDF	W3H32M72E-XSBX 667Mbs 533Mbs) 650ps, -550ps, 500ps. W3H32M72E BA0BA12
W3H32M72E-XSBX Abstract: calibration definition Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm	Original	PDF	W3H32M72E-XSBX W3H32M72E-XSBX calibration definition
Untitled Abstract: No abstract text available Text: ADVANCE MICRON 32 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT3272 SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES • JEDEC-standard 168-pin, dual in-line memory module	OCR Scan	PDF	MT36LSDT3272 168-pin, PC100- PC133-compliant 256MB
Untitled Abstract: No abstract text available Text: A D VA N CE 16, 32 MEG X 72 SDRAM DIMMs MICRON' I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSDT1672A, MT18LSDT3272A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • PC133- and PCIOO-compliant	OCR Scan	PDF	MT9LSDT1672A, MT18LSDT3272A PC133- 168-pin, 128MB 256MB 168-PIN 128MB) 256MB)
ADQ20 Abstract: 99-3M ADQ19 Text: 4, 8 MEG X 64 SDRAM DIMMs MT4LSDT464A, MT4LSDT864A SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm i FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant	OCR Scan	PDF	PC66-* PC100- PC133-compliant 168-pin, 096-cycle 168-PIN ADQ20 99-3M ADQ19
Untitled Abstract: No abstract text available Text: NEW JE DEC SDR AM MO D U L E KMM466S804AT2 K M M 4 6 6 S 8 0 4 A T 2 SD RAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD G E NE R AL DESCRIPTION FEATURE The Sam sung KM M 466S804AT2 is a 8M bit x 64 Synchronous	OCR Scan	PDF	KMM466S804AT2 8Mx64 4Mx16, 466S804AT2 400mil 144-pin
SO-DIMM 144-pin Abstract: Nippon capacitors Text: HB52A89DB-D 64 MB Unbuffered SDRAM S.O.DIMM 8-Mword x 72-bit, 66 MHz Memory Bus, 1-Bank Module 7 pcs of 8 M x 8 and 1 pc of 8 M x 16 components HITACHI ADE-203-982 (Z) Preliminary, Rev. 0.0 Dec. 10, 1998 Description The HB52A89DB is a 8M x 72 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory	OCR Scan	PDF	HB52A89DB-D 72-bit, ADE-203-982 HB52A89DB 64-Mbit HM5264805DTT/DLTT) 128-Mbit HM5212165DTD/DLTD) 144-pin D-85622 SO-DIMM 144-pin Nippon capacitors
Untitled Abstract: No abstract text available Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature	OCR Scan	PDF	HYB39S16400/800/160CT-8/-10 16MBit
BA 151 k Abstract: No abstract text available Text: KMM366S203CTL PC66 SDR AM MO D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -in p u t leakage currents (Inputs) : ±5uA to ±1 uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.	OCR Scan	PDF	KMM366S203CTL 200mV. 2Mx64 KMM366S203CTLtop 150Max KM48S2020CT BA 151 k
JC-DEC97 Abstract: hyundai hy57v161610d Text: - H Y U N D A I -# HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION Preliminary THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of	OCR Scan	PDF	HY57V161610D HY57V161610D 216-bits 288x16. 1SD33- JC-DEC97, JC-DEC97 hyundai hy57v161610d

SDRAM 4 BANK 4 MO 16 Search Results

SDRAM 4 BANK 4 MO 16 Result Highlights (5)

SDRAM 4 BANK 4 MO 16 Datasheets Context Search

Hitachi DSA00190

Hitachi DSA00190

Hitachi DSA00190

Untitled

W3J128M72G-XPBX

TCKAB

W3H32M72E

DNU-A13

Untitled

18CO

CEE 32

Untitled

Untitled

Untitled

W3H32M72E

W3H32M72E-XSBX

Untitled

Untitled

ADQ20

Untitled

SO-DIMM 144-pin

Untitled

BA 151 k

JC-DEC97