SDRAM 4 BANK 4 MO 16 Search Results

SDRAM 4 BANK 4 MO 16 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Hitachi DSA00190 Abstract: No abstract text available Text: HB52RF1289E2U-75B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-562A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 RF12 89 E2 U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリと	Original	HB52RF1289E2U-75B 128-Mword 72-bit, PC133 ADJ-203-562A Hitachi DSA00190	PDF
Hitachi DSA00190 Abstract: No abstract text available Text: HB52RF649E1U-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-560A (Z) 暫定仕様 Rev. 0.1 ’00. 10. 6 概要 Th e HB 52 RF64 9E 1U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリ	Original	HB52RF649E1U-75B 64-Mword 72-bit, PC133 ADJ-203-560A HB52RF649E1U HM5225405BTBTCP 133MHz Hitachi DSA00190	PDF
Hitachi DSA00190 Abstract: No abstract text available Text: HB52R1289E2U-A6B/B6B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC100 SDRAM ADJ-203-561A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 R12 89 E2 U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリとし	Original	HB52R1289E2U-A6B/B6B 128-Mword 72-bit, PC100 ADJ-203-561A 100MHz HB52R1289E2 Hitachi DSA00190	PDF
Untitled Abstract: No abstract text available Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm	Original	W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB W3H64M72E-XSBXF SN63Pb37 SAC305 256MB"	PDF
W3J128M72G-XPBX Abstract: w3j128m72 Text: W3H32M72E-XSB2X 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  54% I/O reduction vs FPBGA	Original	W3H32M72E-XSB2X W3J128M72G-XPBX w3j128m72	PDF
TCKAB Abstract: DNU-A13 Text: White Electronic Designs W3H64M16E-XBX 64M x 16 DDR2 SDRAM 79 PBGA FEATURES  Data rate = 400 Mb/s  Organized as 64M x 16  Package:  Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch  Supply Voltage = 1.8V	Original		PDF
W3H32M72E Abstract: No abstract text available Text: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm	Original	W3H32M72E-XSB2X W3H32M72E	PDF
DNU-A13 Abstract: No abstract text available Text: White Electronic Designs W3H64M16E-XBX 64M x 16 DDR2 SDRAM 79 PBGA FEATURES  Data rate = 667, 533, 400 Mb/s  Organized as 64M x 16  Package:  Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch	Original		PDF
Untitled Abstract: No abstract text available Text: White Electronic Designs W3H64M16E-XBX *PRELIMINARY 64M x 16 DDR2 SDRAM 79 PBGA FEATURES Data rate = 667, 533, 400 Mb/s Organized as 64M x 16 Package: Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch	Original		PDF
Untitled Abstract: No abstract text available Text: ADVANCE MICRON 32 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT3272 SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES • JEDEC-standard 168-pin, dual in-line memory module	OCR Scan	MT36LSDT3272 168-pin, PC100- PC133-compliant 256MB	PDF
18CO Abstract: No abstract text available Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch	Original	W3H64M64E-XSBX 18CO	PDF
CEE 32 Abstract: W3H32M64E-XSBX Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400 Mb/s  Package: • 208 Plastic Ball Grid Array PBGA , 16 x 20mm • 1.0mm pitch  Commercial, Industrial and Military Temperature	Original	W3H32M64E-XSBX W3H32M64E-XSBX 32M64. CEE 32	PDF
Untitled Abstract: No abstract text available Text: A D VA N CE 16, 32 MEG X 72 SDRAM DIMMs MICRON' I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSDT1672A, MT18LSDT3272A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • PC133- and PCIOO-compliant	OCR Scan	MT9LSDT1672A, MT18LSDT3272A PC133- 168-pin, 128MB 256MB 168-PIN 128MB) 256MB)	PDF
ADQ20 Abstract: 99-3M ADQ19 Text: 4, 8 MEG X 64 SDRAM DIMMs MT4LSDT464A, MT4LSDT864A SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm i FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant	OCR Scan	PC66-* PC100- PC133-compliant 168-pin, 096-cycle 168-PIN ADQ20 99-3M ADQ19	PDF

SO-DIMM 144-pin Abstract: Nippon capacitors Text: HB52A89DB-D 64 MB Unbuffered SDRAM S.O.DIMM 8-Mword x 72-bit, 66 MHz Memory Bus, 1-Bank Module 7 pcs of 8 M x 8 and 1 pc of 8 M x 16 components HITACHI ADE-203-982 (Z) Preliminary, Rev. 0.0 Dec. 10, 1998 Description The HB52A89DB is a 8M x 72 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory	OCR Scan	HB52A89DB-D 72-bit, ADE-203-982 HB52A89DB 64-Mbit HM5264805DTT/DLTT) 128-Mbit HM5212165DTD/DLTD) 144-pin D-85622 SO-DIMM 144-pin Nippon capacitors	PDF
Untitled Abstract: No abstract text available Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature	OCR Scan	HYB39S16400/800/160CT-8/-10 16MBit	PDF
BA 151 k Abstract: No abstract text available Text: KMM366S203CTL PC66 SDR AM MO D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -in p u t leakage currents (Inputs) : ±5uA to ±1 uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.	OCR Scan	KMM366S203CTL 200mV. 2Mx64 KMM366S203CTLtop 150Max KM48S2020CT BA 151 k	PDF
JC-DEC97 Abstract: hyundai hy57v161610d Text: - H Y U N D A I -# HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION Preliminary THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of	OCR Scan	HY57V161610D HY57V161610D 216-bits 288x16. 1SD33- JC-DEC97, JC-DEC97 hyundai hy57v161610d	PDF
Untitled Abstract: No abstract text available Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA	Original	W3H32M64E-XSBX 256MB 256MB"	PDF
Untitled Abstract: No abstract text available Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA	Original	W3H32M64E-XSBX 256MB 256MB"	PDF
Untitled Abstract: No abstract text available Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm	Original	W3H32M72E-XSBX 667Mbs	PDF
Untitled Abstract: No abstract text available Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm	Original	W3H32M72E-XSBX W3H32M72E-XSBX 667Mbs	PDF
W3H32M72E Abstract: BA0BA12 Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm	Original	W3H32M72E-XSBX 667Mbs 533Mbs) 650ps, -550ps, 500ps. W3H32M72E BA0BA12	PDF
W3H32M72E-XSBX Abstract: calibration definition Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm	Original	W3H32M72E-XSBX W3H32M72E-XSBX calibration definition	PDF

SDRAM 4 BANK 4 MO 16 Search Results

SDRAM 4 BANK 4 MO 16 Datasheets Context Search

Hitachi DSA00190

Hitachi DSA00190

Hitachi DSA00190

Untitled

W3J128M72G-XPBX

TCKAB

W3H32M72E

DNU-A13

Untitled

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18CO

CEE 32

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ADQ20

SO-DIMM 144-pin

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BA 151 k

JC-DEC97

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W3H32M72E

W3H32M72E-XSBX