Hitachi DSA00190
Abstract: No abstract text available
Text: HB52RF1289E2U-75B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-562A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 RF12 89 E2 U は,8 バイト DIMM(Du al In-l in e Memory Mo du le)で 8 バイト CPU のメインメモリと
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HB52RF1289E2U-75B
128-Mword
72-bit,
PC133
ADJ-203-562A
Hitachi DSA00190
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Hitachi DSA00190
Abstract: No abstract text available
Text: HB52RF649E1U-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-560A (Z) 暫定仕様 Rev. 0.1 ’00. 10. 6 概要 Th e HB 52 RF64 9E 1U は,8 バイト DIMM(Du al In-l in e Memory Mo du le)で 8 バイト CPU のメインメモリ
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HB52RF649E1U-75B
64-Mword
72-bit,
PC133
ADJ-203-560A
HB52RF649E1U
HM5225405BTBTCP
133MHz
Hitachi DSA00190
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Hitachi DSA00190
Abstract: No abstract text available
Text: HB52R1289E2U-A6B/B6B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC100 SDRAM ADJ-203-561A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 R12 89 E2 U は,8 バイト DIMM(Du al In-l in e Memory Mo du le)で 8 バイト CPU のメインメモリとし
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HB52R1289E2U-A6B/B6B
128-Mword
72-bit,
PC100
ADJ-203-561A
100MHz
HB52R1289E2
Hitachi DSA00190
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
W3H64M72E-XSBXF
SN63Pb37
SAC305
256MB"
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W3J128M72G-XPBX
Abstract: w3j128m72
Text: W3H32M72E-XSB2X 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm 54% I/O reduction vs FPBGA
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W3H32M72E-XSB2X
W3J128M72G-XPBX
w3j128m72
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TCKAB
Abstract: DNU-A13
Text: White Electronic Designs W3H64M16E-XBX 64M x 16 DDR2 SDRAM 79 PBGA FEATURES Data rate = 400 Mb/s Organized as 64M x 16 Package: Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch Supply Voltage = 1.8V
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W3H32M72E
Abstract: No abstract text available
Text: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E
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DNU-A13
Abstract: No abstract text available
Text: White Electronic Designs W3H64M16E-XBX 64M x 16 DDR2 SDRAM 79 PBGA FEATURES Data rate = 667, 533, 400 Mb/s Organized as 64M x 16 Package: Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M16E-XBX *PRELIMINARY 64M x 16 DDR2 SDRAM 79 PBGA FEATURES Data rate = 667, 533, 400 Mb/s Organized as 64M x 16 Package: Weight: W3H64M16E-XBX - TBD • 79 Plastic Ball Grid Array PBGA , 11 x 14mm BENEFITS • 1.27mm pitch
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18CO
Abstract: No abstract text available
Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Organized as 64M x 64 • 1.0mm pitch
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W3H64M64E-XSBX
18CO
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CEE 32
Abstract: W3H32M64E-XSBX
Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Mb/s Package: • 208 Plastic Ball Grid Array PBGA , 16 x 20mm • 1.0mm pitch Commercial, Industrial and Military Temperature
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W3H32M64E-XSBX
W3H32M64E-XSBX
32M64.
CEE 32
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Untitled
Abstract: No abstract text available
Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 62% Space savings vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm 42% I/O reduction vs FBGA
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W3H32M64E-XSBX
256MB
256MB"
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Untitled
Abstract: No abstract text available
Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 62% Space savings vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm 42% I/O reduction vs FBGA
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W3H32M64E-XSBX
256MB
256MB"
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
667Mbs
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W3H32M72E
Abstract: BA0BA12
Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
667Mbs
533Mbs)
650ps,
-550ps,
500ps.
W3H32M72E
BA0BA12
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W3H32M72E-XSBX
Abstract: calibration definition
Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
W3H32M72E-XSBX
calibration definition
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 32 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT3272 SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES • JEDEC-standard 168-pin, dual in-line memory module
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MT36LSDT3272
168-pin,
PC100-
PC133-compliant
256MB
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Untitled
Abstract: No abstract text available
Text: A D VA N CE 16, 32 MEG X 72 SDRAM DIMMs MICRON' I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSDT1672A, MT18LSDT3272A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • PC133- and PCIOO-compliant
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MT9LSDT1672A,
MT18LSDT3272A
PC133-
168-pin,
128MB
256MB
168-PIN
128MB)
256MB)
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ADQ20
Abstract: 99-3M ADQ19
Text: 4, 8 MEG X 64 SDRAM DIMMs MT4LSDT464A, MT4LSDT864A SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm i FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant
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PC66-*
PC100-
PC133-compliant
168-pin,
096-cycle
168-PIN
ADQ20
99-3M
ADQ19
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Untitled
Abstract: No abstract text available
Text: NEW JE DEC SDR AM MO D U L E KMM466S804AT2 K M M 4 6 6 S 8 0 4 A T 2 SD RAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD G E NE R AL DESCRIPTION FEATURE The Sam sung KM M 466S804AT2 is a 8M bit x 64 Synchronous
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KMM466S804AT2
8Mx64
4Mx16,
466S804AT2
400mil
144-pin
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SO-DIMM 144-pin
Abstract: Nippon capacitors
Text: HB52A89DB-D 64 MB Unbuffered SDRAM S.O.DIMM 8-Mword x 72-bit, 66 MHz Memory Bus, 1-Bank Module 7 pcs of 8 M x 8 and 1 pc of 8 M x 16 components HITACHI ADE-203-982 (Z) Preliminary, Rev. 0.0 Dec. 10, 1998 Description The HB52A89DB is a 8M x 72 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory
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HB52A89DB-D
72-bit,
ADE-203-982
HB52A89DB
64-Mbit
HM5264805DTT/DLTT)
128-Mbit
HM5212165DTD/DLTD)
144-pin
D-85622
SO-DIMM 144-pin
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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HYB39S16400/800/160CT-8/-10
16MBit
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BA 151 k
Abstract: No abstract text available
Text: KMM366S203CTL PC66 SDR AM MO D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -in p u t leakage currents (Inputs) : ±5uA to ±1 uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S203CTL
200mV.
2Mx64
KMM366S203CTLtop
150Max
KM48S2020CT
BA 151 k
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JC-DEC97
Abstract: hyundai hy57v161610d
Text: - H Y U N D A I -# HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION Preliminary THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of
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HY57V161610D
HY57V161610D
216-bits
288x16.
1SD33-
JC-DEC97,
JC-DEC97
hyundai hy57v161610d
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