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    SDF8200 Search Results

    SDF8200 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF8200 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF8200 Solitron Devices N-Channel Enhancement DMOS FET Scan PDF

    SDF8200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N169

    Abstract: 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200
    Text: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs Br Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5


    Original
    PDF 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 3N169 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200

    Untitled

    Abstract: No abstract text available
    Text: ä ttm m N -C H A N N E L E N H A N C E M E N T D M O S F E T CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ . 020” _ 0.506mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan
    PDF 306mm) 0254mm) 50DF8202

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


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    PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


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    PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    901101

    Abstract: SDF8200 SDF8202 SDF9210 SDF9212 SDF9214
    Text: ipßi ®iyj Tr ©ATim,® C o n N -C H A N N E L E N H A N C E M E N T D M O S FE T tr a n Devices. Inc CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS . 020" (0.508mm It is advisable that:


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    PDF 508mm) 0254mm) 901101 SDF8200 SDF8202 SDF9210 SDF9212 SDF9214

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


    OCR Scan
    PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent

    3N163

    Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
    Text: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0


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    PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 3N165 3N166 3N169 3N188 3N189 3N190

    S08MM

    Abstract: SDF8200 SDF8202 SDF9210 SDF9212 SDF9214 fet e22
    Text: C ^ © U K ST T © ÄTTM ,@ ( N -C H A N N E L E N H A N C E M E N T D M O S FET in t r o n Devices. Inc. CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .020" (0.508mm It is advisable that:


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    PDF 508mm) 0254mm) S08MM SDF8200 SDF8202 SDF9210 SDF9212 SDF9214 fet e22

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


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    PDF MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451

    FMN1

    Abstract: No abstract text available
    Text: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0


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    PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 4000u FMN1

    Untitled

    Abstract: No abstract text available
    Text: ra [D y j T © Ä T j m ® ( N -C H A N N E L E N H A N C E M E N T D M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .020" (0.508mm) Di* S in : It is advisable that:


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    PDF 508mm) 0254mm) sdf9210, sdf9212, sdf9214, sdf8200, sdf8202 0D04D7fl