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    SDF4N60 Search Results

    SDF4N60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF4N60 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 4, Idm Pulsed (A) = 16, RDS (On) (Ohms) = 2.... Scan PDF
    SDF4N60JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF4N60JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF4N60JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF4N60JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF4N60JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF4N60JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: ^¡»litron PRODUCT ÂTÂLO' D EV IC E S ,IN C . 1177 BLUE H ERON BLVD. • RIVIERA BEACH. FLORIDA 33404 T E L : 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER D ra in -s o u rc e 600V,


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    PDF SDF4N60 SDF4N60

    Untitled

    Abstract: No abstract text available
    Text: JËiltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1177 BLUE H ERON BLVD. • RIVIERA BEACH. FLORIDA 33404 T E L : 407 848-4311 • TLX: S I -3435 • FAX: (407) 883-5946 600V, 4.0A, 2 . in ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D r a i n - s o u r c e Vo 1t .(1)


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    PDF 00D3R57

    SDF4N60

    Abstract: No abstract text available
    Text: Ælltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 600V, 4 .O A , 2. in ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l Drain-Gate Voltage (Rg s = 1 . 0 M o ) ( 1) Gate-Source Voltage Cont inuous Drain Current Continuous (Tc = 25* C)


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    PDF 00A/jjlS 300nS, SDF4N60 MIL-S-19500