SDF10N60 Search Results

SDF10N60 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
SDF10N60	Solitron Devices	VDS (V) =, Id Continuous Tc=25C (A) = 10, Idm Pulsed (A) = 40, RDS (On) (Ohms) = 0...	Scan	PDF
SDF10N60JAAD	Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF
SDF10N60JAAS	Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF
SDF10N60JAAU	Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF
SDF10N60JABD	Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF
SDF10N60JABS	Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF
SDF10N60JABU	Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF

SDF10N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
F10N60 Abstract: No abstract text available Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )	Original	SDP/F10N60 O-220 O-220F SDP10N60 SDF10N60 O-220/220F F10N60	PDF
Untitled Abstract: No abstract text available Text: =ÆntrOn n rv i FS m e _ P R O D U C T C À T Â L Q Q n - c h a n n e l enhancem ent mos f e t 600V, A B S O L U T E MAXIMUM R A T IN G S PARAMETER UNITS SYMBOL D r a i n - s o u r c e Vo 1 t . 1 D r a i n - Ga t e Vo 1t age ( R gs = 1•OMn) ( 1 )	OCR Scan	SDF10N60 SDF10N60 IF-10	PDF
SDF10N60 Abstract: No abstract text available Text: Æ lltro n PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 600V, UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (Rg s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)	OCR Scan	SDF10N60 MIL-S-19500 300nS.	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

F10N60

Abstract: No abstract text available
Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

Original

SDP/F10N60 O-220 O-220F SDP10N60 SDF10N60 O-220/220F F10N60

PDF

Untitled

Abstract: No abstract text available
Text: =ÆntrOn n rv i FS m e _ P R O D U C T C À T Â L Q Q n - c h a n n e l enhancem ent mos f e t 600V, A B S O L U T E MAXIMUM R A T IN G S PARAMETER UNITS SYMBOL D r a i n - s o u r c e Vo 1 t . 1 D r a i n - Ga t e Vo 1t age ( R gs = 1•OMn) ( 1 )

OCR Scan

SDF10N60 SDF10N60 IF-10

PDF

SDF10N60

Abstract: No abstract text available
Text: Æ lltro n PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 600V, UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (Rg s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)