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    Text: u n ite d „ _ s e m ic o m f u c S o r s ^ C ~ « <5 D B E S10 3 /1 10 . F lip -C h ip Dual D io d e GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1nm stepper process including a bump technology. The parasitic inductances are reduced and result in


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    DBES103/110 DSDBES1038211 SDBES1038211 PDF