A 2531 optocoupler
Abstract: a 2530 opto hcpl2530sd 2531 2530 OPTO HCPL-4502 HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
HCPL-4502
A 2531 optocoupler
a 2530 opto
hcpl2530sd
2531
2530 OPTO
HCPL2531
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pulse transformer 4502
Abstract: A 2531 optocoupler 4502S fairchild 1011 opto E90700 HCPL4502 HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
HCPL-4502
pulse transformer 4502
A 2531 optocoupler
4502S
fairchild 1011 opto
E90700
HCPL4502
HCPL2531
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Silicon Detector
Abstract: hybrid charge pinFET 900nm LED
Text: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits,
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10kHz
50x10-3
0x10-13
5x10-6
900nm
Silicon Detector
hybrid charge
pinFET
900nm LED
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pulse transformer 4502
Abstract: v027 6N136S HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
E90700,
pulse transformer 4502
v027
6N136S
HCPL2531
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4502 C
Abstract: 6N136S HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135,
6N136
HCPL-2503
HCPL-4502
HCPL-4502/HCPL-2503,
6N135/6
HCPL-2530/HCPL-2531
HCPL-2530
HCPL-2531
4502 C
6N136S
HCPL2531
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InGaAs photodiode spectral response
Abstract: InGaAs photodiode TO-46 photodiode InGaAs NEP
Text: InGaAs Photodetectors SD 008-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 0.184 [4.67] 88° CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE SCHEMATIC 0.016 [0.40]
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1310nm,
1310nm
79X10-14
1310nm
InGaAs photodiode spectral response
InGaAs photodiode TO-46
photodiode InGaAs NEP
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Untitled
Abstract: No abstract text available
Text: InGaAs Photodetectors SD 008-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 0.184 [4.67] 88° CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE SCHEMATIC 0.016 [0.40]
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1310nm,
1310nm
79X10-14
1310nm
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300X1
Abstract: No abstract text available
Text: InGaAs Photodetectors SD 004-11-41-211 FEATURES DESCRIPTION • Low noise • Low dark current • High response APPLICATIONS The SD 004-11-41-211 is a high sensitivity low noise characteristics InGaAs photodiode packaged in a leaded hermetic TO-46 metal package.
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90ivalent
1310nm,
1310nm
00X10
1310nm
300X1
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Untitled
Abstract: No abstract text available
Text: InGaAs Photodetectors SD 012-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 0.184 [4.67] 88° CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE SCHEMATIC 0.016 [0.40]
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1310nm,
1310nm
79X10-14
1310nm
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Untitled
Abstract: No abstract text available
Text: InGaAs Photodetectors SD 060-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.360 [9.14] 0.075 [1.90] 3X 0.018 [0.5] 0.240 [6.10] 0.325 [8.25] 113° 0.165 [4.19] CHIP CHIP DIMENSIONS INCH [mm] 0.50 [12.7] 1 ANODE 2 CASE GROUND 0.079 [2.02] 3 CATHODE SCHEMATIC 0.079 [2.02]
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1310nm,
1310nm
79X10-14
1310nm
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Untitled
Abstract: No abstract text available
Text: InGaAs Photodetectors SD 004-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.029 [0.73] 0.059 [1.50] 3X 0.019 [0.48] 0.055 [1.40] 0.184 [4.67] 88° CATHODE CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE
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1310nm,
1310nm
43X10-14
1310nm
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InGaAs photodiode spectral response
Abstract: Advanced Photonix pin InGaAs chip
Text: InGaAs Photodetectors SD 060-11-41-211 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] 0.075 [1.90] 3X Ø0.018 [0.5] Ø0.360 [9.14] Ø0.240 [6.10] 1 Ø0.200 [Ø5.08] PIN CIRCLE Ø0.325 [8.25] 113° 2 3 CHIP 0.165 [4.19] BOTTOM VIEW 0.50 [12.7] CHIP DIMENSIONS INCH [mm]
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1310nm,
1310nm
79X10-14
1310nm
InGaAs photodiode spectral response
Advanced Photonix
pin InGaAs chip
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1310nm photodiode
Abstract: photodiode InGaAs NEP
Text: InGaAs Photodetectors SD 004-11-41-211 PACKAGE DIMENSIONS INCH [mm] Ø 0.210 [5.33] 0.029 [0.73] 0.065 [1.66] 4X Ø 0.019 [0.48] Ø 0.055 [1.40] 1 Ø 0.184 [4.67] 4 2 3 CHIP 0.145 [3.69] BOTTOM VIEW 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 3 ANODE 4 CASE GROUND
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1310nm,
1310nm
43X10-14
1310nm
1310nm photodiode
photodiode InGaAs NEP
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L1310
Abstract: No abstract text available
Text: InGaAs Photodetectors SD 012-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 1 0.184 [4.67] 88° 2 3 CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.019 [0.500] 3 CATHODE SCHEMATIC
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1310nm,
1310nm
79X10-14
1310nm
L1310
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H11f1 variable resistor 500k
Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
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H11F1
H11F2
H11F3
E90700,
P01101067
H11F1300
H11F1300W
H11F13S
H11F13SD
H11f1 variable resistor 500k
H11F1 300
h11f1 application
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H11F3
Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
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H11F1
H11F2
H11F3
P01101067
H11F3
H11F3300
H11F3300W
H11F33S
H11F33SD
H11F3S
H11f1 variable resistor 500k
an 7511
500k variable resistor
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Untitled
Abstract: No abstract text available
Text: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits, particularly for OEM system designers.
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: CENTRONIC LTD 4SE D m S lfi? Silicon Photodetectors 0000013 S • C E N T f - y l-ifS " Series 3T Extended IR Response, High Speed Series 3T photodetectors are specifically designed for high speed infra-red laser pulse detection. The detector structure which is designed to achieve full depletion at 60 volts reverse bias, makes use of ultra high resistivity silicon to
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OCR Scan
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PDF
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100-3T
320-3T
50-3T
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centronic osd100 6
Abstract: LD20-3 MD100-3 MD25-3 OSD100-3 OSD200-3 QD100-3 QD320-3
Text: CENTRONIC LTD 4SE D m s ifl? □□□□on i Silicon Photodetectors « cent Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly suited to high speed pulsed applications in the region of 900nm and for other applications where the low capacitance obtained at 100
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OCR Scan
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900nm
LD20-3,
MD25-3,
MD100-3
LD25-3,
LD20-3"
MD25-3*
centronic osd100 6
LD20-3
MD25-3
OSD100-3
OSD200-3
QD100-3
QD320-3
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QD320-3T
Abstract: ARSA od320 QD100-3T centronic osd100 6 centronic osd100 ir OSD15-3T QD50-3T OSD100-3T OSD50-3T
Text: CENTRONIC LTD 45E D • m S l f i ? Q0G0013 5 ■! CENT T - t f l- if g " Silicon Photodetectors Series 3T Extended IR Response, High Speed Series 3T photodetectors are specifically designed for high speed infra-red laser pulse detection. The detector structure which is designed to achieve full depletion at 60 volts reverse bias, makes use of ultra high resistivity silicon to
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OCR Scan
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PDF
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QD50-3T
QD100-3T
QD320-3T
ARSA
od320
centronic osd100 6
centronic osd100 ir
OSD15-3T
OSD100-3T
OSD50-3T
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Q0320
Abstract: centronic osd100 6 OSD100-0 OSD5-0 QD7-0 QD50-0 LD20-0 LD35-0 MD100-0 MD25-0
Text: CENTRONIC LTD M5E D mSlfi? 0GQ00D7 T •CENT Silicon Photodetectors_Series 0 General Purpose The Series 0 are a range of general purpose silicon photodiodes designed for operation at a reverse bias voltage of up to 30 volts for applications where low capacitance or fast speed of response are important.
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OCR Scan
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0DD00D7
LD20-0,
LD35-0,
MD25-0,
MD100-0
LD20-0
LD35-0
x1013
MD25-0
MD100-0
Q0320
centronic osd100 6
OSD100-0
OSD5-0
QD7-0
QD50-0
MD25-0
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OSD15-5T
Abstract: centronic osd100 6 OSD1-5T OSD35-5T OSD60-5T FIG27 MAA 436 Centronic osd15-5t osd60 OSD100-5T
Text: CENTRONIC LTD 4SE D • mSlfi? □□□□□El 4 ■CENT Silicon Photodetectors Tz"t//~t/S~ Series 5T Blue Sensitive, Biased or Photovoltaic Operation The Series 5T are a range of low cost detectors offering high blue sensitivity coupled with high shunt resistance and low dark leakage
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OCR Scan
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PDF
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MD25-5T
MD100-5T
MD144-5T
OSD15-5T
centronic osd100 6
OSD1-5T
OSD35-5T
OSD60-5T
FIG27
MAA 436
Centronic osd15-5t
osd60
OSD100-5T
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Lucent 1417H4A
Abstract: No abstract text available
Text: Data Sheet . July1998 . • . m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations o NetLight 1417G4A and 1417H4A ATM/SONET/SDH Transceivers • Transmitter disable input ■ Wide dynamic range receiver with InGaAs PIN photodetector
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July1998
1417G4A
1417H4A
1417G
DS98-298LWP
Lucent 1417H4A
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Untitled
Abstract: No abstract text available
Text: Data Sheet July 1998 microelectronics group Lucent Technologies Bell Labs Innovations NetLight 1417J4A 1300 nm Laser Gigabit Transceiver Transmitter disable input Wide dynamic range receiver with InGaAs PIN photodetector TTL signal-detect output Low power dissipation
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OCR Scan
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PDF
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1417J4A
RJ-45
1000Base-LX
Fibr009.
1417J4A
005002b
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