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    SD NF 55 Search Results

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    SD NF 55 Price and Stock

    ROHM Semiconductor RESD1CANFHT116

    ESD Protection Diodes / TVS Diodes 225mW 26.2-32Vbr Bidir SOT-23 TVS
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    Mouser Electronics RESD1CANFHT116 30,792
    • 1 $0.39
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    • 10000 $0.089
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    ITT Interconnect Solutions CA06COM-E14S-1S-DN-F0

    Standard Circular Connector
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    Mouser Electronics CA06COM-E14S-1S-DN-F0
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    Glenair Inc 805-003-07NF18-55SD

    Circular MIL Spec Connector 11+ start 5 wks AOC
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    Mouser Electronics 805-003-07NF18-55SD
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    Glenair Inc 804-003-07NF14-55SD

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
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    Mouser Electronics 804-003-07NF14-55SD
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    Glenair Inc 801-009-07NF16-55SD

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
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    Mouser Electronics 801-009-07NF16-55SD
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    SD NF 55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EN61340-5-1

    Abstract: Ethernet to fiber optic converter circuit Ethernet Fiber and Copper media converter EN-61340-5-1 KSZ8001 resistor cross reference micrel ethernet phy interoperability 100BASE-FX DM9301 LXT971A
    Text: AFBR-5972Z Industrial Fast Ethernet Fiber Optic Design Application Note 5523 Introduction The AFBR-5972Z fiber optic transceiver provides the system designer with the ability to implement a cost optimized Fast Ethernet 100 Mbps over standard plastic optical fiber (POF). This product is lead free and compliant


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    PDF AFBR-5972Z AFBR-5972Z AA110001) AA110001 AV02-2989EN EN61340-5-1 Ethernet to fiber optic converter circuit Ethernet Fiber and Copper media converter EN-61340-5-1 KSZ8001 resistor cross reference micrel ethernet phy interoperability 100BASE-FX DM9301 LXT971A

    ATM155

    Abstract: VF-45 V23818-C8-V10 Volition VF-45tm
    Text: V23818-C8-V10 Small Form Factor Multimode 1300 nm LED Ethernet/Fast Ethernet/FDDI/ATM 155/194 MBd 1x9 Transceiver with VF-45 Connector Dimensions in 1.287 32.7 .569 (14.45) .55 (13.97) .37 (9.4) .545 (13.85) Footprint .35 (8.89) .157 (4) 3x .135 (3.43)


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    PDF V23818-C8-V10 VF-45TM RJ-45 D-13623, de/semiconductor/products/37/376 ATM155 VF-45 V23818-C8-V10 Volition

    V23818-C8-V10

    Abstract: VF-45 opto switch siemens
    Text: V23818-C8-V10 Small Form Factor Multimode 1300 nm LED Ethernet/Fast Ethernet/FDDI/ATM 155/194 MBd 1x9 Transceiver with VF-45 Connector Preliminary Dimensions in mm 1.287 (32.7) .569 (14.45) .55 (13.97) .37 (9.4) .545 (13.85) Footprint .35 (8.89) .157


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    PDF V23818-C8-V10 VF-45TM RJ-45 D-13623, de/semiconductor/products/37/376 V23818-C8-V10 VF-45 opto switch siemens

    VF-45

    Abstract: Volition V23818-C8-V15
    Text: V23818-C8-V15 Small Form Factor Multimode 1300 nm LED Ethernet/Fast Ethernet/FDDI/ATM 155/194 MBd 2x5 Transceiver with VF-45 Volition™ Connector Preliminary Dimensions in (mm) inches (13.59) Max. .535 (10.16) .400 (13.97) Min .550 Pitch 9x (1.78) .070


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    PDF V23818-C8-V15 VF-45TM D-13623, de/semiconductor/products/37/376 VF-45 Volition V23818-C8-V15

    sf 818 d

    Abstract: NPN 337 SU 179 sf 819 d SF 127 Funkamateur SMD NF sf 118 d sd 339 NF 847 G
    Text: IC, ICsat [mA, A ] 600 -100 -100 -100 -100 100 100 100 100 100 100 -100 -100 -100 100 100 100 -100 -100 -100 (1) (-1) (1) (-1) (1) (-1) (3) (1,5) (-1,5) (1,5) (-1,5) (1,5) (-1,5) * [MHz] ≥ 250 90 90 90 90 ≥ 300 ≥ 300 145 145 161 175 350 350 350 185


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    PDF

    L6390

    Abstract: AN2738 L6390D L6390D013TR
    Text: L6390 High-voltage high and low side driver Features • High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with


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    PDF L6390 SO-16 DIP-16 L6390 AN2738 L6390D L6390D013TR

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    Abstract: No abstract text available
    Text: L6390 High-voltage high/low-side driver Datasheet − production data Features • High-voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with 1 nF


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    PDF L6390 SO-16 DIP-16 L6390

    Untitled

    Abstract: No abstract text available
    Text: L6390 High-voltage high/low-side driver Datasheet − production data Features • High-voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with 1 nF


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    PDF L6390 SO-16 DIP-16 L6390

    TAS5142

    Abstract: AES17 TAS5086 TAS5142DDV TAS5142DKD TAS5508 TAS5518
    Text: TAS5142 www.ti.com SLES126A − FEBRUARY 2005 − REVISED MARCH 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE − DKD 36-Pin PSOP3 − DDV (44-Pin HTSSOP) D High-Efficiency Power Stage (>90%) With 140-mW Output MOSFETs D Power-On Reset for Protection on Power Up


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    PDF TAS5142 SLES126A 36-Pin 44-Pin 140-mW TAS5142 AES17 TAS5086 TAS5142DDV TAS5142DKD TAS5508 TAS5518

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    Abstract: No abstract text available
    Text: TAS5142 www.ti.com SLES126A − FEBRUARY 2005 − REVISED MARCH 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE − DKD 36-Pin PSOP3 − DDV (44-Pin HTSSOP) D High-Efficiency Power Stage (>90%) With 140-mW Output MOSFETs D Power-On Reset for Protection on Power Up


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    PDF TAS5142 SLES126A 36-Pin 44-Pin TAS5508) TAS5142.

    Untitled

    Abstract: No abstract text available
    Text: L6390 High voltage high/low-side driver Datasheet - production data Description SO-16 DIP-16 Features • High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: 290 mA source, 430 mA sink  Switching times 75/35 nsec rise/fall with 1 nF


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    PDF L6390 SO-16 DIP-16 L6390 DocID14493

    AES17

    Abstract: TAS5086 TAS5152 TAS5152DKD TAS5508 TAS5518
    Text: TAS5152 www.ti.com SLES127 − FEBRUARY 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE D 4×35 W at 10% THD+N Into 4-W SE


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    PDF TAS5152 SLES127 36-Pin 140-mW AES17 TAS5086 TAS5152 TAS5152DKD TAS5508 TAS5518

    L6390DTR

    Abstract: 14493 AN2738 L6390 L6390D L6390N
    Text: L6390 High-voltage high and low side driver Features • High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with


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    PDF L6390 SO-16 DIP-16 L6390 L6390DTR 14493 AN2738 L6390D L6390N

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    Abstract: No abstract text available
    Text: TM TAS5142 www.ti.com SLES126A – DECEMBER 2004 – REVISED MARCH 2005 STEREO DIGITAL AMPLIFIER POWER STAGE • • • • • • • • • • • • • • • • • Power Levels for DKD Package 2x100 W at 10% THD+N Into 4-Ω DKD, BTL 2×80 W at 10% THD+N Into 6-Ω DKD, BTL


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    PDF TAS5142 SLES126A 36-pin 44-pin 140-m

    tas5142

    Abstract: No abstract text available
    Text: TAS5142 www.ti.com SLES126 - FEBRUARY 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE D D D D D D − DKD 36-Pin PSOP3 − DDV (44-Pin HTSSOP) High-Efficiency Power Stage (>90%) With 140-mW Output MOSFETs Power-On Reset for Protection on Power Up Without Any Power Supply Sequencing


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    PDF TAS5142 SLES126 36-Pin 44-Pin 140-mW tas5142

    TAS5162

    Abstract: TAS5162DDV TAS5162DKD TAS5508 TAS5518
    Text: TM TAS5162 www.ti.com SLES194B – OCTOBER 2006 – REVISED MARCH 2007 2 x 210 Watt STEREO DIGITAL AMPLIFIER POWER STAGE • • • • • • • • • • • • • 2x160 W at 10% THD+N Into 8-Ω BTL 2×210 W at 10% THD+N Into 6-Ω BTL 1×300 W at 10% THD+N Into 4-Ω PBTL 1


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    PDF TAS5162 SLES194B TAS5518 36-pin 44-pin TAS5162 TAS5162DDV TAS5162DKD TAS5508 TAS5518

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    Abstract: No abstract text available
    Text: TM TAS5162 www.ti.com SLES194A – OCTOBER 2006 – REVISED FEBRUARY 2007 2 x 210 Watt STEREO DIGITAL AMPLIFIER POWER STAGE • • • • • • • • • 2x160 W at 10% THD+N Into 8-Ω BTL 2×210 W at 10% THD+N Into 6-Ω BTL 1×300 W at 10% THD+N Into 4-Ω PBTL 1


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    PDF TAS5162 SLES194A TAS5518 36-pin 44-pin

    Untitled

    Abstract: No abstract text available
    Text: TAS5152 www.ti.com SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE


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    PDF TAS5152 SLES127A 100-dB 36-Pin TAS5508) TAS5152.

    AES17

    Abstract: TAS5086 TAS5152 TAS5152DKD TAS5152DKDR TAS5508 TAS5518
    Text: TAS5152 www.ti.com SLES127 − FEBRUARY 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE D 4×35 W at 10% THD+N Into 4-W SE


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    PDF TAS5152 SLES127 36-Pin 140-mW AES17 TAS5086 TAS5152 TAS5152DKD TAS5152DKDR TAS5508 TAS5518

    Untitled

    Abstract: No abstract text available
    Text: TAS5152 www.ti.com SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE


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    PDF TAS5152 SLES127A 100-dB 36-Pin TAS5508) TAS5152.

    Untitled

    Abstract: No abstract text available
    Text: TM TAS5352A www.ti.com . SLES239 – NOVEMBER 2008 125 W STEREO DIGITAL AMPLIFIER POWER STAGE


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    PDF TAS5352A SLES239 TAS5352A

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    Abstract: No abstract text available
    Text: TM TAS5352A www.ti.com . SLES239 – NOVEMBER 2008 125 W STEREO DIGITAL AMPLIFIER POWER STAGE


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    PDF TAS5352A SLES239 TAS5352A

    Untitled

    Abstract: No abstract text available
    Text: TAS5152 www.ti.com SLES127A − FEBRUARY 2005 − REVISED NOVEMBER 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE


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    PDF TAS5152 SLES127A 100-dB 36-Pin TAS5508) TAS5152.

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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