scop 45
Abstract: No abstract text available
Text: ` Preliminary Datasheet 14.4mm x 9.5mm x 5.5mm SMD 622.08 MHz VCXO PECL or LVPECL Output for SONET/SDH Applications Electrical Performance Operating Conditions Frequency Frequency Stability Set Frequency Frequency vs. Temperature Freq. vs. Supply Voltage Variation
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7H62200016
7H62200043
V111-PECL/LVPECL
scop 45
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Untitled
Abstract: No abstract text available
Text: ` Preliminary Datasheet 14.4mm x 9.5mm x 5.5mm SMD 622.08 MHz XO PECL or LVPECL Output for SONET/SDH Applications Electrical Performance Operating Conditions Frequency Frequency Stability: Set Frequency Frequency vs. Temperature Frequency vs. Supply Voltage Variation
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7J62200010
7J62200047
V111-PECL/LVPECL
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GD16522
Abstract: FAGD1652248BA GD16522-48BA STM16 STM-16
Text: 2.5 Gbit/s Clock and Data Recovery GD16522 an Intel company General Description Features The GD16522 is a high performance monolithic integrated multi-rate Clock and Data Recovery CDR device applicable for optical communication systems including: u SDH STM-16 / 4 / 1
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GD16522
GD16522
STM-16
OC-48
FAGD1652248BA
GD16522-48BA
STM16
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GD16522
Abstract: GD16522-48BA STM16 STM-16 26LVTTL
Text: 2.5 Gbit/s Clock and Data Recovery GD16522 Preliminary General Description Features The GD16522 is a high performance monolithic integrated multi-rate Clock and Data Recovery CDR device applicable for optical communication systems including: u SDH STM-16 / 4 / 1
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GD16522
GD16522
STM-16
OC-48
DK-2740
GD16522-48BA
STM16
26LVTTL
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Untitled
Abstract: No abstract text available
Text: 2.5 Gbit/s Clock and Data Recovery GD16522 Preliminary General Description Features The GD16522 is a high performance monolithic integrated multi-rate Clock and Data Recovery CDR device applicable for optical communication systems including: u SDH STM-16 / 4 / 1
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GD16522
GD16522
STM-16
OC-48
DK-2740
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Untitled
Abstract: No abstract text available
Text: SESDT–10–32–G–03.0–L2 F-214 Rev 05SEP14 TEM–110–02–03.0–G–D–L1 SYSTEM (0,80 mm) .0315" SESDT–15–32–G–03.2–L SESDT, TEM-L1 SERIES DISCRETE WIRE CABLE ASSEMBLY Mates with: TEM-L1 TYPE STRIP POSITIONS PER ROW PLATING OPTION
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F-214
05SEP14)
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IRFBC50
Abstract: IR2213 Application Notes and Design Tips 10KF6 SCOP 200-002
Text: IR2213 S PBF High and Low Side Driver Features • Product Summary Floating channel designed for bootstrap operation Fully operational to +1200 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 V to 20 V
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IR2213
IRFBC50
IR2213 Application Notes and Design Tips
10KF6
SCOP 200-002
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Diode 1N41
Abstract: ECS-8FM ecs-8fa SMD 8f 1N41 ECS-8F
Text: ECS-8F SERIES SMD CLOCK OSCILLATOR The ECS-8F Series oscillator is compatible with both TTL and HCMOS technologies. The J-leaded configuration and high resistance to soldering temperature makes it ideal for surface mount production processes. The 8F offers low power consumption
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000MHz
frequ80
Diode 1N41
ECS-8FM
ecs-8fa
SMD 8f
1N41
ECS-8F
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54F241
Abstract: e327
Text: 1 iDISTRIByTJON^iTATEMENT>Ai Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 This Material Copyrighted By Its Respective Manufacturer 1. SCOPE 1.1 Scop«. This drawing describes device requirements fo r class B M icrocircuits 1n accordance with
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M38510/33202B2X
5962-E327
5962-86874012X
54F241M/B2CJC
M38510/33202B2X
54F241/B2C
M38510/33202B2X.
54F241
e327
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tamura HBL
Abstract: inverter 10w JST Manufacturing HBL-0217 3400B BHSR-02VS-1 P6021 SM02B inverter Tamura tamura hbl 03
Text: 8 .4 ” PIEZOELECTRIC INVERTER 1. Scop e This applies to the C FL Inverter cold — cathode tube inverter H BL— 02 17 . 2. Electrical C haracteristics a. Absolute M axim um Rating Rating Item Sym bol Min Max Input voltaqe Vin + 6 .0 IC S o u rce Voltaqe
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ACAD\MXFMR\A3122024
HBL-021
V/500VAC/1
tamura HBL
inverter 10w
JST Manufacturing
HBL-0217
3400B
BHSR-02VS-1
P6021
SM02B
inverter Tamura
tamura hbl 03
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5962-8762301EX
Abstract: No abstract text available
Text: DISTRIBUTION STATEM EN T A. Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 This Material Copyrighted By Its Respective Manufacturer i. SCOP’E 1.1 Scope. This drawing describes device requirements fo r c la s s B m ic r o c irc u its in accordance w ith
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MIL-STD-883,
MIL-STD-883
MIL-M-38510
5962-8762301EX
5962-8762301FX
5962-87623012X
54AC139DMQB
54AC139FMQB
54AC139LMQB
M38510/75803BEX
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Untitled
Abstract: No abstract text available
Text: This Material Copyrighted By Its Respective Manufacturer ± 1. SCOPE 1.1 Scop* . This drawing describes device requirements fo r class 8 m icro circu its in accordance with 1 .2 .1 o fm - S T D -3 8 3 , "Provisions fo r the use o f MIL-STD-883 in conjunction with compliant non-JA*l
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5962-E125
devF381/BRAJC
54F381/BRA
M38510/33803BRX
5962-8671001SX
54F381/BSA
M38510/33803BSX
5962-86710012X
54F381/B2CJC
54F381/B2C
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Untitled
Abstract: No abstract text available
Text: □ ANALOG DEVICES CMOS Serial Input 12-Bit DAC AD7543 1.1 Scop e. This specification covers the detail requirements for a monolithic C M O S 12-bit multiplying digital-to-analog converter designed for serial interface applications. 1.2 Part N um ber. The complete part number per Table 1 o f this specification is as follows:
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12-Bit
AD7543
7543S
/883B
7543T
7543GT
/883B
E-20A
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bdx47
Abstract: BDX45
Text: Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector, connected to metal part of mounting surface
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O-126;
BDX42
BDX44.
BDX45;
BDX47
BDX45
bdx47
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Thermal Considerations for Power Semiconductors
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 FEATURES PINNING • High current max. 0.5 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. 2,4 3 DESCRIPTION base collector emitter APPLICATIONS
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BSP60;
BSP61;
BSP62
OT223
BSP50,
BSP51
BSP52.
OT223)
BSP61
BSP62
Thermal Considerations for Power Semiconductors
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2n2222 h parameter values
Abstract: 2n2222 2n2222a 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit 2N2222, 2N2222A 2n2222 test circuit
Text: Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Linear amplification and switching.
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2N2907A.
2N2222;
2N2222A
2N2222
2N2222A
2n2222 h parameter values
2N2222 NPN Transistor features
2n2222 ti
2n2222 transistor pin b c e
transistor 2N2222 PHILIPS
2N2222 circuit
2N2222, 2N2222A
2n2222 test circuit
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA M C5 4 F /7 4 F 1 3 8 1-OF-8 D EC O D ER/ DEMULTIPLEXER 1-OF-8 DECODER/DEMULTIPLEXER FAST D E SCRIPTIO N — The MC54F/74F138 is a high speed 1-of-8 Deco der/Demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input enables
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MC54F/74F138
1-of-24
1-of-32
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TSOP 1378
Abstract: 62C1024
Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y AUGUST 1997 FEATURES DESCRIPTION • A c c e s s tim e s of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They
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IS62LV1024L
IS62LV1024LL
IS62LV1024LL
072-word
450-mil
IS62LV1024LL-35QI
IS62LV1024LL-35TI
IS62LV1024LL-35TSI
TSOP 1378
62C1024
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 374=171=2 G D G 7 ci53 Q E3E D 'T - H i- Z b - O Z October 1989 Edition 1.0 FUJITSU DATASHEET- M B 8 1 C 6 8 A - 45-W CMOS 16K-BIT HIGH SPEED SRAM 4096 WORDS X 4 BITS SRAM WITH HIGH SPEED AND AUTOMATIC POWER DOWN The Fujitsu MB81C68A-W is 4096 words x 4 bits static random access memory fabricated
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16K-BIT
MB81C68A-W
374T7b5
MB81C68Aâ
500mV
MB81C68
20-LEAD
DIP-20C-C03)
D20006S-4C
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GPC-3060D
Abstract: DA2403-01
Text: _i_ 1.0 Rev. FUNCTION SPECIFICATION Title M odel DA2403-01 1.2 DOC. Number Date 07/12/2002 PSDA2403-0112 ELECTRICAL CHARACTERISTICS: 1.1 ABSOLUTE MAXIMUM RATING : ITEM SYM VIN PD OPERATING TEMPERATURE Top STORATING TEMPERATURE Tstg RELATIVE HUMIDITY
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PSDA2403-0112
DA2403-01
GPC-3060D
DA2403-01
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DSC 2.5-15
Abstract: DIN 3021 STANDARD
Text: 512K X 8 SRAM Module molate PUMA 67S16000-35/45/55 Issue 1.0 : May 1994 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 16,777,216 bit CMOS High Speed Static RAM S3 Features Fast Access times of 35/45/55 ns. JEDEC 68 J leaded Ceramic Surface Mount Package.
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67S16000-35/45/55
MIL-STD-883
A0-A18
302ng
67S16000LMB-45
S16000
512Kx32
DSC 2.5-15
DIN 3021 STANDARD
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MOZ 23
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5189AP, J-25, -35,-45,-55 6 5 5 3 6 -B IT 1 6 3 8 4 -W O R D BY 4 -B IT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 16384 word by 4-bit static RAMs, fabri cated w ith the high-performance CMOS siiicon-gate MOS process and designed for high-speed application. These
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M5M5189AP,
536-B
16384-WORD
MOZ 23
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Untitled
Abstract: No abstract text available
Text: 512K X 8 SRAM molaic M S8512FK-45/55 Issue 3.1 : September 1993 S e m ic o n d u c to r Pin Definition 524,288 x 8 CM O S High Speed Static RAM Features Very Fast Access Times of 45/55 ns JED EC Standard 32 pin DIL footprint Operating Power 1050 mW typ. Low Power Standby
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S8512FK-45/55
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Untitled
Abstract: No abstract text available
Text: f t e 1 o ws molate 6 4 K X 4 Monolithic CMOS SRAM MSM464T/V/W-45/55 Issue 2.0 : January 1992 M o sa ic S e m ic o n d u c to r PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM ' P i n Definitions Package Type:T,'V’ Features Very Fast Access Times of 45/55 ns
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MSM464T/V/W-45/55
MIL-STD-883C
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