CMG03
Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A
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SCE0004I
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
CMG03
1SS391
2fu smd transistor
DF2S6.8S
CMG07
TOSHIBA DIODE CATALOG
DSR520CT
toshiba SEMICONDUCTOR GENERAL CATALOG
CMF05
CRS01
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Untitled
Abstract: No abstract text available
Text: GaAsP photodiode G1747 Schottky type with extended red sensitivity Features Applications Low dark current Analytical instruments Extended red sensitivity Color identification High UV sensitivity UV detection Structure / Absolute maximum ratings Parameter Package
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G1747
KGPD1006E02
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smd diode Lz zener
Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A
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SCE0004L
TPC6K01
HMG01
CRG02
CRG07
CRG03
CRG09
CMG05
CMG07
CMG02
smd diode Lz zener
CRS20I30B
JDV2S41
CRS15I30B
CUS10I40A
TOSHIBA DIODE CATALOG
toshiba SEMICONDUCTOR GENERAL CATALOG
CMS30I40A
CMS10I40A
CRS20I40B
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G1962
Abstract: uv photodiode, GaP GaP photodiode
Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package
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G1961
G1962
G1963
KGPD1007E02
uv photodiode, GaP
GaP photodiode
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UV source led 254 nm peak
Abstract: G1126-02
Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/
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G1126-02
G1127-02
G2119
KGPD1005E02
UV source led 254 nm peak
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Untitled
Abstract: No abstract text available
Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/
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G1126-02
G1127-02
G2119
KGPD1005E02
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OPA128
Abstract: SLOA011 TW30SY s 5301
Text: Ultraviolet selective thin film sensor “TW30SY” NEW: Read important application notes on page 4 ff. Features • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area
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TW30SY"
SLOA011)
OPA128
SLOA011
TW30SY
s 5301
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GUVB-S11SD
Abstract: No abstract text available
Text: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring
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GUVB-S11SD
GUVB-S11SD
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GUVA-T11GD
Abstract: No abstract text available
Text: GUVA-T11GD TECHNICAL DATA UV-A Sensor Features • • • • • Applications Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current • • • Full UV Band Monitoring
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GUVA-T11GD
GUVA-T11GD
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Untitled
Abstract: No abstract text available
Text: Ultraviolet selective thin film sensor UVD 39 Features •= •= •= •= •= •= •= Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle
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Untitled
Abstract: No abstract text available
Text: GUVA-S22ED TECHNICAL DATA UV-B Sensor Features • • • • • Applications • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring Absolute Maximum Ratings
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GUVA-S22ED
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GUVC-T10GD
Abstract: No abstract text available
Text: GUVC-T10GD TECHNICAL DATA UV-A Sensor Features • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness Pure UV-C Monitoring Sterilization Lamp Monitoring Absolute Maximum Ratings
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GUVC-T10GD
GUVC-T10GD
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GUVA-T11GD-L
Abstract: No abstract text available
Text: GUVA-T11GD-L TECHNICAL DATA UV-A Sensor Features • • • • • Applications Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current • • • Full UV Band Monitoring
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GUVA-T11GD-L
GUVA-T11GD-L
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Untitled
Abstract: No abstract text available
Text: Photodiode-Chip EPC-440-0.9 19.11.2007 rev. 06 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 860 800 720 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet
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EPC-440-0
PD-03
D-12555
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UV source led 254 nm peak
Abstract: schottky photodiode G1746 G1747
Text: PHOTODIODE GaAsP photodiode G1746, G1747 Schottky type with extended red sensitivity Features Applications l Low dark current l Extended red sensitivity l High UV sensitivity l Analytical instrument l Color identification l UV detection • General ratings / Absolute maximum ratings
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G1746,
G1747
G1746
SE-171
KGPD1006E01
UV source led 254 nm peak
schottky photodiode
G1746
G1747
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2fu smd transistor
Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG02
O-220SM
CRG01
CRG04
CMG03
2fu smd transistor
2FK transistor
3FV 60 43
smd diode Lz zener
HN2S02JE
CMZ24
CRS01
DF2S6.2S
1SV101
1SV283B
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Untitled
Abstract: No abstract text available
Text: Photodiode-Chip EPC-440-1.4 19.11.2007 rev. 06 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 1360 1300 1100 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet
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EPC-440-1
PD-04
D-12555
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schottky photodiode
Abstract: ultraviolet sensor uv photodiode ultraviolet sensor flame 360NM ultraviolet detector PDU-G102
Text: PHOTONIC Gallium Nitride GaN , Ultra Violet (U.V.) Schottky Photodiode Type PDU-G102 DETECTORS INC. PACKAGE DIMENSIONS inch [mm] HEADER 0.100 [2.54] PIN CIRCLE CL 0.210 [5.33] WINDOW CAP (WELDED) 0.155 [3.98] WIRE BONDS 0.055 [1.40] 45° Ø0.018 [0.46] VIEWING
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PDU-G102
PDU-G102
5x10-14
100-PDU-G102
schottky photodiode
ultraviolet sensor
uv photodiode
ultraviolet sensor flame
360NM
ultraviolet detector
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Untitled
Abstract: No abstract text available
Text: GUVA-S12SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring UV-A Lamp Monitoring
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GUVA-S12SD
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Untitled
Abstract: No abstract text available
Text: GUVA-S12SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring UV-A Lamp Monitoring
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GUVA-S12SD
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Untitled
Abstract: No abstract text available
Text: Photodiode-Chip EPC-440-3.6 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up 3560 typ. dimensions (µm) 3500 3300 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet
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EPC-440-3
PD-06
D-12555
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PDF
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GUVV-T10GD
Abstract: No abstract text available
Text: GUVV-T10GD TECHNICAL DATA UV-A Sensor Features • • • • Applications Indium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation High Responsivity & Low Dark Current Full UV Band Monitoring UV-A Lamp Monitoring Sterilization Lamp Monitoring
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GUVV-T10GD
GUVV-T10GD
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode-Chip EPC-440-2.5 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 2460 2400 2200 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet
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EPC-440-2
D-12555
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAsP Photodiodes Schottky Types Type No. Dimensional Outline (P.44-46)/ Window Material Package Peak Spectral Active Area Effective Response Sensitivity Active Area Wavelength Size Range Ap A (mm) (mm2) (nm) (nm) 190 to 680 610 Photo Sensitivity S Typ. (A/W)
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OCR Scan
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G2119
KGPDB0010EA
KGPDB0011EA
KGPDB0013EA
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