4E diode
Abstract: marking code 4e
Text: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E
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OD-523
100mA
200mA
40Vmin.
100mA
200mA
25-January
4E diode
marking code 4e
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4E diode
Abstract: marking code 4e diode 4e
Text: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E
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OD-523
100mA
200mA
40Vmin.
11-April
4E diode
marking code 4e
diode 4e
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4E diode
Abstract: No abstract text available
Text: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E
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OD-523
100mA
100mA
200mA
11-April
4E diode
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sod-323 diode MARKING CODE 4
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG DEVICE MARKING CODE: Device Type BAT42WS BAT43WS TA = 25°C unless otherwise noted Parameter
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200mW
OD-323
BAT42WS
BAT43WS
sod-323 diode MARKING CODE 4
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marking code B3 SOD-323
Abstract: sod323 marking NO
Text: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type RB551V-30 TA = 25°C unless otherwise noted Parameter Power Dissipation Units
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RB551V-30
OD-323
marking code B3 SOD-323
sod323 marking NO
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B4 diode surface mount
Abstract: No abstract text available
Text: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type RB501V-40 TA = 25°C unless otherwise noted Parameter Power Dissipation Units
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RB501V-40
OD-323
B4 diode surface mount
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Untitled
Abstract: No abstract text available
Text: DSB15IM45IB preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 15 A VF = 0.55 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSB15IM45IB Backside: cathode 1 3 2 Features / Advantages: Applications: Package: TO-262 I2Pak
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DSB15IM45IB
O-262
60747and
20131030a
O-262
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Untitled
Abstract: No abstract text available
Text: DSA15IM45IB preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM45IB Backside: cathode 1 3 2 Features / Advantages: Applications: Package: TO-262 I2Pak
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DSA15IM45IB
O-262
60747and
20131030a
O-262
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Untitled
Abstract: No abstract text available
Text: DSA15IM200UC preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages:
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DSA15IM200UC
O-252
60747and
20131031b
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Untitled
Abstract: No abstract text available
Text: DSA30C200IB preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 2x VF = 15 A 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200IB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-262 I2Pak
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DSA30C200IB
O-262
60747and
20130723a
O-262
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DSB10P60PN
Abstract: dsb10p60
Text: DSB10P60PN advanced Schottky Diode Gen ² VRRM = 2x 60 V I FAV = 10 A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Phase leg Part number DSB10P60PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ● Very low Vf
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DSB10P60PN
O-220FP
60747and
20120112a
DSB10P60PN
dsb10p60
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Untitled
Abstract: No abstract text available
Text: DSA30C200IB preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 2x VF = 15 A 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200IB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-262 I2Pak
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DSA30C200IB
O-262
60747and
20131031b
O-262
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Untitled
Abstract: No abstract text available
Text: DSA30C100QB preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 2x VF = 15 A 0.72 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C100QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P
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DSA30C100QB
O-247
O-247AD
O-220AB
O-220ABFP
60747and
20131031a
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DIODE MARKING 534
Abstract: DSA 010
Text: DSA 15 IM 200 UC tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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O-252
30TYP
60747and
DIODE MARKING 534
DSA 010
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Untitled
Abstract: No abstract text available
Text: DSA80C45HB preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 2x 40 A VF = 0.69 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA80C45HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247
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DSA80C45HB
O-247
60747and
20131030a
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DSA30I150PA
Abstract: definition RMS forward current Schottky diode TO220 IXYS DSA schottky diode low vf IXYS DSA 12 ixys diode high power
Text: DSA 30 I 150 PA advanced V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 150 V 30 A 0.80 V Part number DSA 30 I 150 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf
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O-220
DSA30I150PA
O-220AC
60747and
20080929a
DSA30I150PA
definition RMS forward current
Schottky diode TO220
IXYS DSA
schottky diode low vf
IXYS DSA 12
ixys diode high power
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Untitled
Abstract: No abstract text available
Text: DSA50C150HB preliminary Schottky Diode Gen ² VRRM = 150 V I FAV = 2x VF = 25 A 0.74 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA50C150HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247
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DSA50C150HB
O-247
60747and
20131031a
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Untitled
Abstract: No abstract text available
Text: DSA 10 I 100 PM advanced V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 10 A 0.72 V Part number 3 1 Backside: isolated Applications: Features / Advantages: Rectifiers in switch mode power supplies SMPS
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O-220FP
DSS10-01A
DSS10-01AS
DSA10I100PM
O-220
O-263
O-220ACFP
60747and
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Untitled
Abstract: No abstract text available
Text: DSA50C100QB Schottky Diode Gen ² VRRM = 100 V I FAV = 2x VF = 25 A 0.72 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA50C100QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Very low Vf
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DSA50C100QB
O-247
60747and
20131031a
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Untitled
Abstract: No abstract text available
Text: DSA 15 I 45 PA advanced V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 15 A 0.63 V Part number 3 1 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
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O-220
DSA15I45PA
O-220AC
60747and
20080929a
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schottky diode low vf
Abstract: DSA15I45PA diode avalanche DSA
Text: DSA 15 I 45 PA advanced V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 15 A 0.63 V Part number DSA 15 I 45 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf
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O-220
DSA15I45PA
O-220AC
60747and
20080929a
schottky diode low vf
DSA15I45PA
diode avalanche DSA
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Untitled
Abstract: No abstract text available
Text: DSA 30 I 100 PA advanced V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 30 A 0.78 V Part number 3 1 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
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O-220
DSA30I100PA
O-220AC
60747and
20080929a
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IXYS DSA
Abstract: DSS10-01A DSS10-01AS
Text: DSA 10 I 100 PM advanced V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 10 A 0.72 V Part number DSA 10 I 100 PM 3 1 Backside: isolated Features / Advantages: Applications: Package: ● Very low Vf
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O-220FP
DSA10I100PM
O-220
O-263
O-220ACFP
60747and
IXYS DSA
DSS10-01A
DSS10-01AS
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mosfet 4914
Abstract: 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 AO4914 AO4914L 4914 alpha
Text: Rev 0: July 2003 Rev 1: Jan 2004 Rev 2: Mar 2004 AO4914, AO4914L Lead-Free Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make
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AO4914,
AO4914L
AO4914
AO4914L
mosfet 4914
4914 mosfet
4914 dual n-channel
4914 DUAL MOSFET
4914
alpha omega 4914
ON 4914
4914 alpha
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