Untitled
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
|
Original
|
DSA300I45NA
OT-227B
60747and
20120907a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
|
Original
|
DSS6-0045AS
O-252
6-0045AS
60747and
20110915a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS17-06CR V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 600 V 17 A 2.71 V Part number 3 1 Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
|
Original
|
DSS17-06CR
ISOPLUS247
60747and
20110201a
|
PDF
|
ZLLS400
Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
|
Original
|
ZLLS400
OD323
ZLLS400
IR610
ZHCS400
ZLLS400TA
ZLLS400TC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
|
Original
|
DSS6-0025BS
O-252
60747and
20110915a
|
PDF
|
IRF7807D1
Abstract: No abstract text available
Text: PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier
|
Original
|
IRF7807D1
IRF7807D1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSA30C45PC advanced Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number Backside: cathode 1 Features / Advantages: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour
|
Original
|
DSA30C45PC
O-263
60747and
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSA240X200NA advanced Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number Backside: isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour
|
Original
|
DSA240X200NA
OT-227B
DSS2x101-02A
60747and
20120426a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSB 10 I 45 PM advanced V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 10 A 0.52 V Part number 3 1 Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses
|
Original
|
O-220FP
DSB10I45PM
O-220ACFP
60747and
20080929a
|
PDF
|
BAT60B
Abstract: w5 marking
Text: BAT60B Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: * High Current Rectifier Schottky Diode with Low VF drop * Low Voltage, Low inductance * For Power Supply * For detection and step-up-conversion Mechanical Data: * Case: SOD-323, Plastic
|
Original
|
BAT60B
OD-323,
MIL-STD-202,
10VOLTS
OD-323
OD-323
19-Jul-07
BAT60B
w5 marking
|
PDF
|
schottky diode application
Abstract: K-088 Die IRF6691 IRF6691TR1
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
|
Original
|
95867D
IRF6691
IRF6691
schottky diode application
K-088 Die
IRF6691TR1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS2x41-01A V RRM = 100 V I FAV = 2x 40 A V F = 0.70 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
|
Original
|
DSS2x41-01A
OT-227B
Definiti33
2x41-01A
60747and
20110603a
|
PDF
|
S3 DIODE schottky
Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
|
Original
|
M3D891
BAT54L
OD882
MDB391
SCA75
613514/01/pp8
S3 DIODE schottky
SOD882
S3 marking DIODE
BAT54L
Marking s3 Schottky barrier
Marking "s3" Schottky barrier
MARKING C SOD882
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS2x111-008A V RRM = 80 V I FAV = 2x 110 A V F = 0.72 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses
|
Original
|
DSS2x111-008A
OT-227B
60747and
20110603a
|
PDF
|
|
|
e3p1
Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Text: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die
|
Original
|
NTMSD3P102R2
NTMD3P102R2/D
e3p1
MOSFET 1052
NTMSD3P102R2
NTMSD3P102R2G
NTMSD3P102R2SG
|
PDF
|
MARKING C SOD882
Abstract: nxp Standard Marking
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
|
Original
|
M3D891
BAT54L
MDB391
BAT54L
OD882
613514/01/pp7
771-BAT54L-T/R
MARKING C SOD882
nxp Standard Marking
|
PDF
|
L6210 schottky
Abstract: L6210
Text: L6210 DUAL SCHOTTKY DIODE BRIDGE . . . . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES HIGH EFFICIENCY 4A PEAK CURRENT LOW FORWARD VOLTAGE FAST RECOVERY TIME TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210is a monolithic IC containing eight Schottky diodes arranged as two separated diode
|
Original
|
L6210
L6210is
L6210
DIP16
L6210ise
L6210 schottky
|
PDF
|
S3 marking DIODE
Abstract: BAT54L S3 DIODE schottky MARKING C SOD882
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
|
Original
|
M3D891
BAT54L
OD882
MDB391
613514/01/pp7
S3 marking DIODE
BAT54L
S3 DIODE schottky
MARKING C SOD882
|
PDF
|
d0109
Abstract: sanken power transistor FMEN-210A 210A
Text: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters
|
Original
|
FMEN-210A
Package---TO220F
FMEN-210A
D01-090EA-060310
d0109
sanken power transistor
210A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
|
Original
|
M3D319
1PS79SB10
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
|
PDF
|
BAT60A
Abstract: BAR63-03W
Text: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
|
Original
|
BAT60A.
BAT60A
OD323
150may
BAT60A
BAR63-03W
|
PDF
|
P65 MOSFET
Abstract: IRF7353D2
Text: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint
|
Original
|
IRF7353D2
7353d2
P65 MOSFET
IRF7353D2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS2x61-01A V RRM = 100 V I FAV = 2x 60 A V F = 0.74 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSS2x61-01A Backside: isolated Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses
|
Original
|
DSS2x61-01A
OT-227B
2x61-01A
60747and
20110603a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an
|
OCR Scan
|
IRF7523D1
Rf7523d1
0D2B023
|
PDF
|
