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    SCHOTTKY CST Search Results

    SCHOTTKY CST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY CST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    avalanche diode

    Abstract: an2025 st AN2025 STPS16H100CT STPS20H100CT STPS3045CT STPS6045CW 16A-100V transil diode equivalent
    Text: AN2025 APPLICATION NOTE Converter Improvement Using Schottky Rectifier Avalanche Specification STMicroelectronics gives in product datasheets useful information for all their Schottky Rectifier families to define their working limit in the avalanche area. A simple method to determine if a Schottky diode can


    Original     		PDF AN2025 avalanche diode an2025 st AN2025 STPS16H100CT STPS20H100CT STPS3045CT STPS6045CW 16A-100V transil diode equivalent

    Untitled

    Abstract: No abstract text available
    Text: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original     		PDF CTS05S40

    Untitled

    Abstract: No abstract text available
    Text: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original     		PDF CBS10S30

    Untitled

    Abstract: No abstract text available
    Text: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original     		PDF CTS05S40

    Untitled

    Abstract: No abstract text available
    Text: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original     		PDF CBS10S30

    Untitled

    Abstract: No abstract text available
    Text: CTS05S30 Schottky Barrier Diode Silicon Epitaxial CTS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original     		PDF CTS05S30

    CTS05S30

    Abstract: marking code 8a
    Text: CTS05S30 Schottky Barrier Diode Silicon Epitaxial CTS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage


    Original     		PDF CTS05S30 CTS05S30 marking code 8a

    Untitled

    Abstract: No abstract text available
    Text: CCS15S40 Schottky Barrier Diode Silicon Epitaxial CCS15S40 1. Applications • High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(2) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production


    Original     		PDF CCS15S40

    Untitled

    Abstract: No abstract text available
    Text: CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production 1 2013-07


    Original     		PDF CCS15S30

    CCS15S30

    Abstract: No abstract text available
    Text: CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original     		PDF CCS15S30 CCS15S30

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    smd diode Lz zener

    Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B

    Untitled

    Abstract: No abstract text available
    Text: 1SS420CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Unit: mm Characteristics Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA


    Original     		PDF 1SS420CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416CT

    Untitled

    Abstract: No abstract text available
    Text: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode


    Original     		PDF CBS05F30

    Untitled

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT

    1SS417CT

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT 1SS417CT

    Untitled

    Abstract: No abstract text available
    Text: < Ku band internally matched power GaN HEMT > MGFK47G3745 13.75 – 14.5 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING The MGFK47G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications. Unit : millimeters 21.0 +/-0.3 FEATURES 1


    Original     		PDF MGFK47G3745 MGFK47G3745, 42dBm CSTG-14952

    Untitled

    Abstract: No abstract text available
    Text: CBS10S40 Schottky Barrier Diode Silicon Epitaxial CBS10S40 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(2) = 0.48 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode


    Original     		PDF CBS10S40

    1SS416CT

    Abstract: No abstract text available
    Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416CT 1SS416CT

    marking code 72

    Abstract: No abstract text available
    Text: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode


    Original     		PDF CBS05F30 marking code 72

    Untitled

    Abstract: No abstract text available
    Text: CBS10S40 Schottky Barrier Diode Silicon Epitaxial CBS10S40 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(2) = 0.48 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode


    Original     		PDF CBS10S40

    Untitled

    Abstract: No abstract text available
    Text: DSR520CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR520CT High-Speed Switching Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 32 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300


    Original     		PDF DSR520CT