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    SCHOTTKY BARRIER RECTIFIER AKA Search Results

    SCHOTTKY BARRIER RECTIFIER AKA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY BARRIER RECTIFIER AKA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b1060g

    Abstract: No abstract text available
    Text: NRVBB1060 SWITCHMODEt Power Rectifier This SWITCHMODE power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com Features SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS


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    PDF NRVBB1060 NRVBB1060/D b1060g

    PBYR1525CT

    Abstract: pbyr1525 BP317 RECTIFIER DIODES PHILIPS DATA BOOK sp 7624 279-27 A 2531 0601 circuit 4466 philips 23 st 339
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBYR1525CT series Rectifier diodes Schottky barrier Preliminary specification File under Discrete Semiconductors, SC02 February 1996 Philips Semiconductors Preliminary specification Rectifier diodes Schottky barrier February 1996


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    PDF PBYR1525CT SCDS47 117021/200/01/pp8 pbyr1525 BP317 RECTIFIER DIODES PHILIPS DATA BOOK sp 7624 279-27 A 2531 0601 circuit 4466 philips 23 st 339

    BP317

    Abstract: RECTIFIER DIODES PHILIPS DATA BOOK str 6752 CH-8027 FIN-02630 A 2531 0601 PBYR1025 STR 90050 PBYR10-25 279-27
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBYR1025 series Rectifier diodes Schottky barrier Preliminary specification File under Discrete Semiconductors, SC02 February 1996 Philips Semiconductors Preliminary specification Rectifier diodes Schottky barrier February 1996


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    PDF PBYR1025 SCDS47 117021/200/01/pp8 BP317 RECTIFIER DIODES PHILIPS DATA BOOK str 6752 CH-8027 FIN-02630 A 2531 0601 STR 90050 PBYR10-25 279-27

    b1545 aka

    Abstract: b1545g b1545 B1545G AKA MBRB1545CTT4 SCHOTTKY BARRIER RECTIFIER aka transistor B1545 MBRB1545CT MBRB1545CTG MBRB1545CTT4G
    Text: MBRB1545CT SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com SCHOTTKY BARRIER


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    PDF MBRB1545CT MBRB1545CT/D b1545 aka b1545g b1545 B1545G AKA MBRB1545CTT4 SCHOTTKY BARRIER RECTIFIER aka transistor B1545 MBRB1545CT MBRB1545CTG MBRB1545CTT4G

    B1060G

    Abstract: B1060 DIODE B1060 NRVBB1060 NRVBB1060T4G SCHOTTKY BARRIER RECTIFIER aka
    Text: NRVBB1060 SWITCHMODEt Power Rectifier This SWITCHMODE power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: http://onsemi.com Features • • • • • SCHOTTKY BARRIER


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    PDF NRVBB1060 NRVBB1060/D B1060G B1060 DIODE B1060 NRVBB1060 NRVBB1060T4G SCHOTTKY BARRIER RECTIFIER aka

    b10 45g

    Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
    Text: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art


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    PDF MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G MBRB1045/D b10 45g ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G

    b10 45g

    Abstract: No abstract text available
    Text: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art


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    PDF MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G MBRB1045/D b10 45g

    B20200G

    Abstract: SCHOTTKY BARRIER RECTIFIER aka B20200G AKA b20200 mbr20200ct-g MBR20200CTG b20200 diode
    Text: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    PDF MBR20200CT MBR20200CT/D B20200G SCHOTTKY BARRIER RECTIFIER aka B20200G AKA b20200 mbr20200ct-g MBR20200CTG b20200 diode

    B20200G

    Abstract: B20200G AKA MBRB20200CTT4G B20200 MBRB20200CT MBRB20200CTG MBRB20200CTT4 SCHOTTKY BARRIER RECTIFIER aka
    Text: MBRB20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    PDF MBRB20200CT MBRB20200CT/D B20200G B20200G AKA MBRB20200CTT4G B20200 MBRB20200CT MBRB20200CTG MBRB20200CTT4 SCHOTTKY BARRIER RECTIFIER aka

    B20200G

    Abstract: B20200G AKA SCHOTTKY BARRIER RECTIFIER aka Diode marking WW1 B20200 marking code ww1 J1702 MBRB20200CT MBRB20200CTG MBRB20200CTT4
    Text: MBRB20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    PDF MBRB20200CT MBRB20200CT/D B20200G B20200G AKA SCHOTTKY BARRIER RECTIFIER aka Diode marking WW1 B20200 marking code ww1 J1702 MBRB20200CT MBRB20200CTG MBRB20200CTT4

    B20200G

    Abstract: 418B-04 B20200G AKA b20200 D2PAK SCHOTTKY BARRIER RECTIFIER aka SBRB20200 PPAP MANUAL
    Text: MBRB20200CTG, SBRB20200CTT4G SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    PDF MBRB20200CTG, SBRB20200CTT4G AEC-Q101 MBRB20200CT/D B20200G 418B-04 B20200G AKA b20200 D2PAK SCHOTTKY BARRIER RECTIFIER aka SBRB20200 PPAP MANUAL

    B20200G AKA

    Abstract: No abstract text available
    Text: MBRB20200CTG, SBRB20200CTT4G SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    PDF MBRB20200CTG, SBRB20200CTT4G MBRB20200CT/D B20200G AKA

    Untitled

    Abstract: No abstract text available
    Text: MBRB1545CTG, SBRB81545CTT4G, SBRB1545CTG SWITCHMODE Power Rectifier http://onsemi.com D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the


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    PDF MBRB1545CTG, SBRB81545CTT4G, SBRB1545CTG MBRB1545CT/D

    B1545G AKA

    Abstract: B1545G b1545 b1545 aka aka B1545G 418B-04 SBRB1545CTG SBRB81545 SBRB81545CT MBRB1545CT-G
    Text: MBRB1545CTG, SBRB81545CTT4G, SBRB1545CTG SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


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    PDF MBRB1545CTG, SBRB81545CTT4G, SBRB1545CTG AEC-Q101 MBRB1545CT/D B1545G AKA B1545G b1545 b1545 aka aka B1545G 418B-04 SBRB81545 SBRB81545CT MBRB1545CT-G

    B20200G

    Abstract: No abstract text available
    Text: MBRJ20200CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    PDF MBRJ20200CTG MBRJ20200CT/D B20200G

    B20100G

    Abstract: B20100G diode
    Text: MBRJ20100CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    PDF MBRJ20100CTG MBRJ20100CT/D B20100G B20100G diode

    b2545g

    Abstract: b2545 aka b2545
    Text: MBRJ2545CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    PDF MBRJ2545CTG MBRJ2545CT/D b2545g b2545 aka b2545

    B20200G

    Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
    Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    PDF MBRF20200CT MBRF20200CT/D B20200G B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG

    B20100G

    Abstract: B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA
    Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    PDF MBRF20100CT MBRF20100CT/D B20100G B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA

    b20100g

    Abstract: No abstract text available
    Text: MBRB20100CTG, NRVBBS20100CTT4G, NRVBB20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.


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    PDF MBRB20100CTG, NRVBBS20100CTT4G, NRVBB20100CTT4G MBRB20100CT/D b20100g

    b2545g

    Abstract: B2545G diode b2545 aka B2545 b2545g aka
    Text: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal.


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    PDF MBRB2545CTG, SBRB2545CTG MBRB2545CT/D b2545g B2545G diode b2545 aka B2545 b2545g aka

    B20100G

    Abstract: B20100G diode B20100G on aka B20100G AKA mbrb20100ctg AKA B20100G B20100G to220 B20100G diode AKA NRVBB20100CTT4G b20100 g
    Text: MBRB20100CTG, NRVBBS20100CTT4G, NRVBB20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.


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    PDF MBRB20100CTG, NRVBBS20100CTT4G, NRVBB20100CTT4G O-220 AEC-Q101 MBRB20100CT/D B20100G B20100G diode B20100G on aka B20100G AKA mbrb20100ctg AKA B20100G B20100G to220 B20100G diode AKA b20100 g

    B20200G

    Abstract: B20200G AKA b20200 b20200 diode B2020 221D-03 1505C 221D MBRF20200CT MBRF20200CTG
    Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    PDF MBRF20200CT MBRF20200CT/D B20200G B20200G AKA b20200 b20200 diode B2020 221D-03 1505C 221D MBRF20200CT MBRF20200CTG

    B20200G AKA

    Abstract: B20200G
    Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    PDF MBRF20200CT MBRF20200CT/D B20200G AKA B20200G