MUR420 diode
Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal
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MBRM140T3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR420 diode
MUR860 equivalent
Diode 31DQ06
mr760 DIODE
usd745c equivalent
1N5186GP
1N2069
diode MARKING BCJ
P600K
SES5001 cross reference
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM120ET3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
Diode 1N4007 DO-7 Rectifier Diode
FE8D
marking BCV
BA157* diode
MUR160 SMa
diode rgp10g
MBRD360
cathode top 1n5619
1N2069
mur120 equivalent diode
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mr852
Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM120LT3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mr852
DIODE MUR410
BA 5904 A F P
RS1G footprint wave soldering
MUR460 BL
mur1650
BYV1945
murs160t3 smb
MBRD360
TRANSISTOR 534
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case SMB
Abstract: No abstract text available
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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B130LB
DS30043
case SMB
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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B130L
DS30151
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B13LB
Abstract: No abstract text available
Text: SPICE MODELS: B130LB B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip · · · · Ideally Suited for Automatic Assembly · High Temperature Soldering: 260°C/10 Second at Terminal · Guard Ring Die Construction for
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B130LB
DS30043
B130LB-13
3000/Tape
com/datasheets/ap02007
B130LB-13-F.
B13LB
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Untitled
Abstract: No abstract text available
Text: SPICE MODELS: B130LB B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip · · · · Ideally Suited for Automatic Assembly · High Temperature Soldering: 260°C/10 Second at Terminal · Guard Ring Die Construction for
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B130LB
DS30043
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Untitled
Abstract: No abstract text available
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak
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B130LB
MIL-STD-202,
DS30043
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B130LB
Abstract: No abstract text available
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak
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B130LB
MIL-STD-202,
B13LB
DS30043
B130LB
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Untitled
Abstract: No abstract text available
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B130LB Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak
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B130LB
DS30043
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DS3004
Abstract: B130LB B130LB-13 B130LB-13-F J-STD-020A
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B130LB Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak
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B130LB
J-STD-020A
DS30043
B130LB-13
3000/Tape
com/datasheets/ap02007
B130LB-13-F.
DS3004
B130LB
B130LB-13
B130LB-13-F
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B130LB Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak
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B130LB
J-STD-020A
MIL-STD-202,
DS30043
B130LB-13
3000/Tape
com/datasheets/ap02007
B130LB-13-F.
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Untitled
Abstract: No abstract text available
Text: WEITRON B130W-30 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 1000m AMPERES 30 VOLTS P b Lead Pb -Free 1 2 SOD-123 SOD-123 Outline Dimensions Unit:mm SOD-123 Dim A B C D E H J K Min Max 2.55 2.85 1.40 1.80 0.95 1.35 0.50 0.70 0.30 REF
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B130W-30
1000m
OD-123
OD-123
07-Jul-08
B130-30
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marking B13 diode SCHOTTKY
Abstract: No abstract text available
Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130T3
marking B13 diode SCHOTTKY
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"MARKING B13"
Abstract: DIODE Marking B13 b13 smb MBRS130T3 Marking B13
Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130T3
r14525
MBRS130T3/D
"MARKING B13"
DIODE Marking B13
b13 smb
MBRS130T3
Marking B13
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403A-03
Abstract: MBRS130T3
Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130T3
r14525
MBRS130T3/D
403A-03
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403A-03
Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon
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MBRS130LT3/D
MBRS130LT3
403A-03
MBRS130LT3
CASE 403A
MBRS130LT3 marking
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Untitled
Abstract: No abstract text available
Text: MBRS130T3G, NRVBS130T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130T3G,
NRVBS130T3G
MBRS130T3/D
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Untitled
Abstract: No abstract text available
Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130T3
MBRS130T3/D
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MBRS130T3
Abstract: 403A-03 MBRS130T3G
Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130T3
MBRS130T3/D
MBRS130T3
403A-03
MBRS130T3G
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Untitled
Abstract: No abstract text available
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features_ • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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B130LB
DS30043
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Untitled
Abstract: No abstract text available
Text: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features_ • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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B130LB
100-C
DS30043
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B130LB
Abstract: No abstract text available
Text: B130LB VISHAY 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features_ • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly
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B130LB
MIL-STD-202,
B13LB
DS30043
B130LB
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B180
Abstract: No abstract text available
Text: L I T E m SEMICONDUCTOR Schottky Rectifiers Electrical Characteristics Part Number IR at VR=VRRM VR 'f a v =V RRM V A Package V Fmax at I 'fsm A 25 °C 100 °C mA mA V A Surface Mount Rectifiers (Schottky Barrier B120 20 1.0 30 0.5 10 0.5 1 SMA B130 30
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B1100
B130L
B180
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